HL6501MG
Visible High Power Laser Diode for DVD-RAM
ADE-208-515H (Z)
9th Edition
Dec. 2000
Description
The HL6501MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure.
It is suitable as a light source for large capacity optical disc memories, such as DVD-RAM, and various
other types of optical equipment.
Hermetic sealing of the small package (φ5.6 mm) assures high reliability.
Application
• Optical disc memories
• Optical equipment
Features
• High output power: 35 mW (CW)
• Visible light output: λp = 658 nm Typ
• Small package: φ 5.6 mm
• Low astigmatism: 6 µm Typ (PO = 5 mW)
LDPD
13
Internal CircuitPackage Type
• HL6501MG: MG
2
HL6501MG
2
Absolute Maximum Ratings (TC = 25°C)
Item Symbol Rated Value Unit
Optical output power PO35 mW
Pulse optical output power PO(pulse) 50 * mW
LD reverse voltage VR(LD) 2V
PD reverse voltage VR(PD) 30 V
Operating temperature Topr –10 to +60 °C
Storage temperature Tstg –40 to +85 °C
Note: Pulse condition : Pulse width = 100 ns , duty = 50%
Optical and Electrical Characteristics (TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Optical output power PO35 — — mW Kink free *
Optical output power PO(pulse) 50 — — mW Kink free *
Threshold current Ith 30 45 70 mA —
Operating voltage VOP 2.1 2.6 3.0 V PO = 30 mW
Slope efficiency ηs 0.5 0.75 1.0 mW/mA 18 (mW) / (I(24mW) – I(6mW))
Beam divergence
parallel to the junction θ// 7 8.5 10.5 deg. PO = 30 mW
Beam divergence
parpendicular to the junction θ⊥ 18 22 26 deg. PO = 30 mW
Astigmatism AS—6 —µmP
O = 5 mW, NA = 0.55
Lasing wavelength λp 645 658 665 nm PO = 30 mW
Monitor current IS0.05 0.3 1.5 mA PO = 30 mW, VR(PD) = 5 V
Note: Kink free is confirmed at the temperature of 25°C.
HL6501MG
3
Typical Characteristic Curves
0 20016012080
40
50
40
30
Optical output power, P
O
(mW)
20
10
0
Forward current, I
F
(mA)
Optical Output Power vs. Forward Current
Slope efficiency, η
S
(mW/mA)
Case temperature, T
C
(°C)
Slope Efficiency vs. Case Temperature
60
1.0
0.8
0.6
0.4
0.2
0010 50403020
T
C
= 60°C
T
C
= 25°C
T
C
= 0°C
Threshold current, Ith (mA)
Case temperature, T
C
(°C)
Threshold Current vs. Case Temperature
60010 50403020
100
10 70 80 80
70
0.5
0.4
0.3
Monitor current, I
S
(mA)
0.2
0.1
Optical output power, P
O
(mW)
Monitor Current vs. Optical Output Power
05040302010
0
V
R(PD)
= 5 V
T
C
= 25°C
HL6501MG
4
Typical Characteristic Curves (cont)
Lasing wavelength, λp (nm)
Case temperature, TC (°C)
Lasing Wavelength vs. Case Temperature
650 660655
Relative intensity
Lasing wavelength, λp (nm)
Lasing Spectrum
1000
800
600
Polarization ratio
400
200
Optical output power, PO (mW)
Polarization Ratio vs. Optical Output Power
05040302010
0
TC = 25°C
NA = 0.55
TC = 25°C
06010 50403020
675
670
665
660
655
650
PO = 30 mW
PO = 30 mW
PO = 20 mW
PO = 10 mW
PO = 5 mW
80
70
Monitor current, IS (mA)
Case temperature, TC (°C)
Monitor Current vs. Case Temperature
060
1.0
0.8
0.6
0.4
0.2
0
PO = 30 mW
VR(PD) = 5 V
10 50403020
1200
HL6501MG
5
Typical Characteristic Curves (cont)
Gain (dB)
Frequency (Hz)
Frequency Response
1M 100M 3G10M
3dB/div
1G
Intensity
Angle, θ (deg.)
Far Field Pattern
−40 −100 102030−20−30 40
1.0
0.8
0.6
0.4
0.2
0
PO = 30 mW
TC = 25°C
Perpendicular
Parallel
Astigmatism, AS (µm)
Optical output power, PO (mW)
Astigmatism vs. Optical Output Power
05040302010
10
6
4
2
0
TC = 25°C
NA = 0.55
8
PO = 3 mW
01
100
80
60
40
20
0
LD Forward
N = 5pcs
∆Iop ≤ 10%
judgment
23
Electrostatic Destruction(MIL standard)
Survival rate (%)
Applied voltage (kV)
HL6501MG
6
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LD/MG
—
—
0.3 g
Unit: mm
1
2
3
5.6
+0
–0.025
φ
1.0 ± 0.1
(0.4)
(90°)
1.6 ± 0.2
φ
0.4
+0.1
–0
φ
φ4.1 ± 0.3
3.55 ± 0.1
0.25
Glass
1.27
φ
3 – 0.45 ± 0.1
6.5 ± 1.0
1.2 ± 0.1 2.3 ± 0.2
φ
123
2.0 ± 0.2
Emitting Point
HL6501MG
7
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
HL6501MG
8
Hitachi, Ltd.
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