UCLAMP3301P - SEMTECH - Datasheet.Live

PROTECTION PRODUCTS

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PROTECTION PRODUCTS - MicroClamp®®

®®

uClamp3301P

Low Voltage μClamp®®

®®

for ESD and CDE Protection

Description Features

Dimensions Schematic & PIN Configuration

Revision 2/24/2010

The μClamp® TVS diodes are designed to replace

multilayer varistors (MLVs) in portable applications such

as cell phones, notebook computers, and PDAs. They

offer superior electrical characteristics such as lower

clamping voltage and no device degradation when

compared to MLVs. They are designed to protect

sensitive semiconductor components from damage or

upset due to electrostatic discharge (ESD), lightning,

electrical fast transients (EFT), and cable discharge

events (CDE).

The μClamp®3301P is constructed using Semtech’s

proprietary EPD process technology. The EPD process

provides low standoff voltages with significant reduc-

tions in leakage currents and capacitance over silicon-

avalanche diode processes. They feature a true

operating voltage of 3.3 volts for superior protection

when compared to traditional pn junction devices.

The μClamp3301P is in an 2-pin SLP1006P2 package.

It measures 1.0 x 0.6 x 0.5mm. The leads are spaced

at a pitch of 0.65mm and are finished with lead-free

NiPdAu. Each device will protect one line operating at

3.3 volts. It gives the designer the flexibility to protect

single lines in applications where arrays are not practi-

cal. They may be used to meet the ESD immunity

requirements of IEC 61000-4-2, Level 4 (±15kV air,

±8kV contact discharge). The combination of small

size and high ESD surge capability makes them ideal

for use in portable applications such as cellular

phones, digital cameras, and MP3 players.

Applications

Mechanical Characteristics

Cellular Handsets & Accessories

Personal Digital Assistants (PDAs)

Notebooks & Handhelds

Portable Instrumentation

Digital Cameras

Peripherals

MP3 Players

Transient protection for data lines to

IEC 61000-4-2 (ESD)

IEC 61000-4-4 (EFT)

Cable Discharge Event (CDE)

Ultra-small package

Protects one data line

Low clamping voltage

Working voltage: 3.3V

Low leakage current

Solid-state silicon-avalanche technology

SLP1006P2 package

Pb-Free, Halogen Free, RoHS/WEEE Compliant

Nominal Dimensions: 1.0 x 0.6 x 0.5 mm

Lead Finish: NiPdAu

Molding compound flammability rating: UL 94V-0

Marking: Marking code, cathode band

Packaging: Tape and Reel

SLP1006P2 (Bottom View)

Maximum Dimensions (mm)

0.65

0.50

0.60

1.0

PROTECTION PRODUCTS

uClamp3301P

Absolute Maximum Rating

Electrical Characteristics (T=25oC)

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MWR

V3.3=50.05.0Aμ

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sμ02/8=pt,A5=0.8V

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PROTECTION PRODUCTS

uClamp3301P

Typical Characteristics

Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve

Clamping Voltage vs. Peak Pulse Current Normalized Junction Capacitance vs. Reverse Voltage

Insertion Loss S21 ESD Clamping

(8kV Contact per IEC 61000-4-2)

012345

Peak Pulse Current - IPP (A)

Clamping Voltage - VC (V)

Waveform

Parameters:

tr = 8μs

td = 20μs

0.2

0.4

0.6

0.8

1.2

00.511.522.533.5

Reverse Voltage - VR (V)

Cj(VR) / Cj(VR=0V)

f = 1 MHz

2 3

START

. 030 MHz 3

STOP 000

. 000 000 MHz

CH1 S21 LOG 6 dB / REF 0 dB

1: -9.2069 dB

900 MHz

2: -12.958 dB

1.8 GHz

3: -11.689 dB

2.5 GHz

4: -3.0358 dB

227MHz

0 dB

-6 dB

-12 dB

-18 dB

-24 dB

-30 dB

-36 dB 1

GHz

100

MHz 3

GHz

MHz

100

110

0 25 50 75 100 125 150

Ambient Temperature - TA (oC)

% of Rated Power or IPP

0.01

0.1

0.1 1 10 100 1000

Pulse Duration - tp (µs)

Peak Pulse Power - PPP (kW)

Note: Data is taken with a 10x attenuator

PROTECTION PRODUCTS

uClamp3301P

Device Connection Options

The μClamp3301P is designed to protect one data or

I/O line operating at 3.3 volts. It will present a high

impedance to the protected line up to 3.3 volts. It will

“turn on” when the line voltage exceeds 3.5 volts. The

device is unidirectional and may be used on lines

where the signal polarity is above ground. The cathode

band should be placed towards the line that is to be

protected. These devices should not be connected to

DC supply rails as they can latch up as described

below.

Due to the “snap-back” characteristics of the low

voltage TVS, it is not recommended that the I/O line be

directly connected to a DC source greater than snap-

back votlage (VSB) as the device can latch on as

described below.

EPD TVS Characteristics

The μClamp3301P is constructed using Semtech’s

proprietary EPD technology. The structure of the EPD

TVS is vastly different from the traditional pn-junction

devices. At voltages below 5V, high leakage current

and junction capacitance render conventional ava-

lanche technology impractical for most applications.

However, by utilizing the EPD technology, the

μClamp3301P can effectively operate at 3.3V while

maintaining excellent electrical characteristics.

The EPD TVS employs a complex nppn structure in

contrast to the pn structure normally found in tradi-

tional silicon-avalanche TVS diodes. Since the EPD

TVS devices use a 4-layer structure, they exhibit a

slightly different IV characteristic curve when compared

to conventional devices. During normal operation, the

device represents a high-impedance to the circuit up to

the device working voltage (VRWM). During an ESD

event, the device will begin to conduct and will enter a

low impedance state when the punch through voltage

(VPT) is exceeded. Unlike a conventional device, the low

voltage TVS will exhibit a slight negative resistance

characteristic as it conducts current. This characteris-

tic aids in lowering the clamping voltage of the device,

but must be considered in applications where DC

voltages are present.

When the TVS is conducting current, it will exhibit a

slight “snap-back” or negative resistance characteris-

Applications Information

Device Schematic & Pin Configuration

IPP

ISB

IPT

RWM VV PT VC

EPD TVS IV Characteristic Curve

Pin 2

Pin 1

tics due to its structures. This point is defined on the

curve by the snap-back voltage (VSB) and snap-back

current (ISB). To return to a non-conducting state, the

current through the device must fall below the ISB

(approximately <50mA) and the voltage must fall below

the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V

TVS is connected to 3.3V DC source, it will never fall

below the snap-back voltage of 2.8V and will therefore

stay in a conducting state.

PROTECTION PRODUCTS

uClamp3301P

Figure 1 - uClamp3301P Spice Model

Applications Information - Spice Model

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PROTECTION PRODUCTS

uClamp3301P

Outline Drawing - SLP1006P2

Land Pattern - SLP1006P2

INCHES

.026 BSC

aaa

.008

.020

DIM

MIN

.018

.016

0.30

0.70

0.20

0.50

.003

.010

.024

.012

.028

0.08

0.25

0.60

0.65 BSC

MILLIMETERS

MAX

0.55

DIMENSIONS

MIN

0.45

NOM

.020

MAX

.022

NOM

0.40

0.50

CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).

NOTES:

BOTTOM VIEW

TOP VIEW

aaa C

SEATING

PLANE

bbb C A B

D.035 .039 .043 0.90 1.10

1.00

.004bbb 0.10

bxN

A1 .000 .001 .002 0.00 0.03 0.05

2x L

PIN 1 ID

R .002 .004 .006 0.05 0.10 0.15

THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.

CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR

NOTES:

DIM

MILLIMETERSINCHES

(0.85)

.055

.012

.022

(.033)

1.40

0.55

0.30

DIMENSIONS

COMPANY'S MANUFACTURING GUIDELINES ARE MET.

X .024 0.60

1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).

PROTECTION PRODUCTS

uClamp3301P

Marking Code

Contact Information

Semtech Corporation

Protection Products Division

200 Flynn Road, Camarillo, CA 93012

Phone: (805)498-2111 FAX (805)498-3804

Ordering Information

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Tape and Reel Specification

Notes:

1) MicroClamp, uClamp and μClamp are trademarks of

Semtech Corporation

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mm8 mm2.4

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mm1.0+5.1

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500.+95.0(

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52.0±

)130.(

01.±057.1

)400.±960.

(

50.0±5.3

)200.±831.(

01.0±0.4

-00.±751.(

1.0±0.4

-00.±751.(

50.0±0.2

)200.±970.(

20.0±452.0

)610.(mm

mm0.8

mm3.0+

mm1.0-

)210.±213.(

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mm01.0-/+96.0mm01.0-/+91.1mm01.0-/+66.0

Device Orientation in Tape

PIN 1 ID

Note: Cathode band at Pin 2

Cathode Band Location

User Direction of feed