112 Optoisolators QUICK REFERENCE CHART MIN. MIN. MIN. OUTPUT CURRENT DC VOLTAGE TYPICAL PACKAGE TRANSFER ISOLATION RATING BANDWIDTH OUTPUT FORMAT PRODUCT KEY PACKAGE TYPE RATIO VOLTAGE (BYCEO) R, = 1002 TRANSISTOR MCT2 A 6 LEAD PLASTIC DIP 20% 1500 V 30V 150 kHz TRANSISTOR MCT2E A 6 LEAD PLASTIC DIP 20% 2500 V 30V 150 kHz TRANSISTOR MCT210 A 6 LEAD PLASTIC DIP 150% 4000 V 30V 150 kHz TRANSISTOR MCT26 A 6 LEAD PLASTIC DIP 6% 1500 V 30V 150 kHz TRANSISTOR MCT4 Cc TO-46 METAL CAN 15% 1000 V 30V 150 kHz TRANSISTOR MCT4R* Cc TO-46 METAL CAN 15% 1000 V 30V 150 kHz TRANSISTOR MCT6 B 8 LEAD PLASTIC DIP 20% 1500 V 30V 150 kHz DUAL CHANNEL TRANSISTOR MCT66 B 8 LEAD PLASTIC DIP 6% 1500 V 30V 150 kHz DUAL CHANNEL , TRANSISTOR 4N25 F 6 LEAD PLASTIC DIP 20% 2500 V 30V 300 kHz TRANSISTOR 4N26 F 6 LEAD PLASTIC DIP 20% 1500 V 30V 300 kHz TRANSISTOR 4N27 F 6 LEAD PLASTIC DIP 10% 1500 V 30V 300 kHz TRANSISTOR 4N28 F 6 LEAD PLASTIC DIP 10% 500 V 30V 300 kHz TRANSISTOR 4N35 F 6 LEAD PLASTIC DIP 100% 3550 V 30V 150 kHz TRANSISTOR 4N36 F 6 LEAD PLASTIC DIP 100% 2500 V 30V 150 kHz TRANSISTOR 4N37 F 6 LEAD PLASTIC DIP 100% 1500 V 30V 150 kHz DARLINGTON TRANS. MCA230 A 6 LEAD PLASTIC DIP 100% 1500 V 30V 10 kHz DARLINGTON TRANS. MCA231 A 6 LEAD PLASTIC DIP 200% 1500 V 30V 10 kHz DARLINGTON TRANS. MCA255 A 6 LEAD PLASTIC DIP 100% 1500 V 55V 10 kHz DARLINGTON TRANS. 4N29 F 6 LEAD PLASTIC DIP 100% 2500 V 30V 30 kHz DARLINGTON TRANS. 4N30 F 6 LEAD PLASTIC DIP 100% 1500 V 30V 30 kHz DARLINGTON TRANS. 4N31 F 6 LEAD PLASTIC DIP 50% 1500 V 30V 30 kHz DARLINGTON TRANS. 4N32 F 6 LEAD PLASTIC DIP 500% 2500 V 30V 30 kHz DARLINGTON TRANS. 4N33 F 6 LEAD PLASTIC DIP 500% 1500 V 30V 30 kHz *Reliability conditioned to MIL-STD-883, Method 5005/B, 100% pre-conditioning. FORWARD MAX. pc BLOCKING TURN-ON PACKAGE ISOLATION VOLTAGE CURRENT OUTPUT FORMAT PRODUCT KEY PACKAGE TYPE VOLTAGE (VDRRM) (Ip) SCR MCS2 A 6 LEAD PLASTIC DIP 1500 V 200 V 14.0 mA SCR MCS2400 A 6 LEAD PLASTIC DIP 1500 V 400 V 14.0mA 2 SCRs (CONNECTED ANODE TO CATHODE) MCS6200 B 8 LEAD PLASTIC DIP 1500 V 200 V 14.0mA 2 SCRs (CONNECTED ANODE TO CATHODE) McCS6201 B 8 LEAD PLASTIC DIP 2500 V 200 V 14.0 mA MIN. MIN. DC BINARY MAX. TYP. OUTPUT PACKAGE ISOLATION DATA RATE TRIGGER HYSTERESIS FORMAT PRODUCT KEY PACKAGE TYPE VOLTAGE (BDR) (Ip) (Alp) LOGIC GATE MCL601 B 8 LEAD PLASTIC DIP 2000 V 0.10 MHz 5.0mA 1.0 mA OPEN COLLECTOR LOGIC GATE MCL611 B 8 LEAD PLASTIC DIP 2000 V 1.0 MHz 15.0mA 5.0 mA OPEN COLLECTOR (TOTEM POLE OUTPUT MCL600 & MCL610 available February, 1977.) MAX. OUTPUT PACKAGE PACKAGE COLLECTOR TYPICAL DARK CURRENT FORMAT PRODUCT KEY TYPE CURRENT (Ic) BANDWIDTH (IcEo) TRANSISTOR MCT8 E rene LIMIT 200 uA @If= 20 mA, VcE=10V 150 kHz 100 nA TRANSISTOR MCT81 E etn LIMIT 50 uA @ Ip = 20 mA, Vox =10V 200 kHz 100 nA IT DARLINGTON MCA7 D REFLECTIVE 50 uA @Ip=50 mA, VCR =5 V 0.8 kHz 100 nA SENSOR SWITCH DARLINGTON MCA8 E Sach LIMIT 2mA @Ip=16mA, Vcp=1V 0.8 kHz 100 nA WITCH DARLINGTON MCA81 E SLOTTED LIMIT 1.6 mA @Ip= 50 mA, Vof=1V 1.5 kHz 100 nA SWITCH143 PHOTO SCR MCS2 OPTO-ISOLATOR MCS2400 PRODUCT DESCRIPTION The MCS2 and the MCS2400 devices consist of a photo SCR coupled to a gallium arsenide infrared diode in a six lead plastic DIP package. The MCS2 has a blocking voitage rating of 200 volts while the MCS2400 has a 400 volt rating. PACKAGE DIMENSIONS FEATURES & APPLICATIONS B Built-in memory @ AC switch (SPST) [e340 NOM B High current carrying capability | we 0.075 MAX. (pulsed condition) EMITTER @ Plastic dual-in-line package e High isolation resistance10}! Q 02 @ 355 volt isolation, emitter to detector {) PH siticone Compact, rugged, light-weight tz a Low coupling capacitance... 1.0 pF typical OETECTOR 050 0.100 . The Photo SCR coupled pair is intended for applica- o.060 "7 wore Oar tions where complete electrical isolation is required carvooe @) 1 gee between low power circuitry, such as integrated cir- q Dearwore cuits, and AC line voltages. It provides high speed em] fee018+.002 Nore: ALL DIMENSIONS IN INCHES switching of relay functions. Because of its bistable AND ARE TYPICAL EXCEPT characteristics, it lends itself for use as a latching re-+ AS NOTED . . : . lay in direct current circuits. C359 ELECTRO-OPTICAL CHARACTERISTICS (25C Free Air Unless Otherwise Specified) MCS2 MCS2400 CHARACTERISTICS MIN. TYP. MAX. MIN. TYP. MAX. UNITS TEST CONDITIONS INPUT DIODE Forward voltage (V-) 1.25 1.5 1.25 1.5 Vv Ip = 20mMA Reverse voltage (Va) 3.0 _ _ 3.0 _ _ Vv lp = 10uUA Reverse current (Ip) _ 001 10 _ -001 10 BLA Vp =3.0V Junction capacitance (Cy) _ 50 _ _ 50 _ pF v=0 DETECTOR Forward ieakage current (Ip-y) - .02 2.0 _ .02 2.0 LA Vex = Rated Vex, Raw = 27kD Reverse leakage current (IRx)} _ 02 2.0 _ -02 2.0 uA Vex = Rated Vex, Rex = 27KQ Forward blocking voltage (Vey, Voy) 290 - 400 _ - Vv Rex = 27kQ @ 100C Reverse blocking voitage (Vagom) 200 _ _ 400 _ Vv Rew = 27k2 @ 100 C On voltage (Vr) _ -98 1.3 _ 98 1.3 Vv I; = 100 mA Holding current (ly x) -01 .16 -50 -O1 16 -50 mA Rek = 27kQ Gate trigger voitage (Var) _ 0.5 1.0 _ 0.6 1.0 Vv Vex = 100 V Gate trigger current (Igr) _ 19 100 _ 23 100 LA Vex = 100 V, RL = 10kKQ, Rex = 27k COUPLED Turn on current (threshold), (I+) 0.5 5.0 14 0.5 5.0 14 mA Vex = 100 V, Rew = 27k t, + ty (See note 1) = (ty,) - 7 _ _ 7 _ bs Ip = 30 MA, Re, = 27k2, Veg = 20 V Isolation breakdown voltage (Vicg) 3550 5500 _ 3550 5500 _ vbc t= 1 min. Isolation resistance (Rigg) 19?! 1012 - ig} 1012 - 2 v = 500 VDC Isolation capacitance (Cig) ~ 1.0 2 _ 1.0 2 PF f= 1 MHz Dielectric dissipation limit (Dy _ 50,000 _ - 50,000 _ V-Hz t= 15 minutes AC vottage fimit _ 800 - _ 800 - Vams f = 60 Hz44 MCS2 MCS2400 ABSOLUTE MAXIMUM RATINGS Storage temperature 55C to 150C Operating temperature -55C to 100C Lead soldering time @ 260C 7.0 seconds LED (GaAs Diode) DETECTOR (Photo SCR) Power dissipation @ 25C ambient......... 60 mw Power dissipation @ 25C ambient ......... 200 mW Derate linearly from 25C woe ee eee 0.8 mw/C Derate linearly from 25C Lol ee eee 2.67 mw/c Continuous forward current .............-. 40 mA DC anode current .. 2... ..2. 00.002 eee 150 mA Reverse current 2.2... 00.0022 eee ee ee 10 pA Peak pulse current (100 us, 120 pps)........ LOA Peak forward current ..........0000000e 0.5A Average gate current ......-2..-2...-.2-000. 25 mA (50 ps pulse, 120 pps) Reverse gate current ........-.-2022005 1.0mA COUPLED MCS2 anode voltage (DC or peak AC) ....... 200 V Isolation voltage... 2. ee ee 3550 VDC MCS2400 anode voltage (DC or peak AC) ..... 400 V Total package power dissipation .......... 250 mW ELECTRO-OPTICAL CHARACTERISTIC CURVES (25C Free Air Unless Otherwise Specified) 100 L 1.5 kV UNITS RMS 1.5 kV UNITS Ip DEGRADATION ~ % 5 Ve FORWARD VOLTAGE-VOLTS VOLTAGE-kKV 4H) Ta = 25C 10 1000 10,000 100,000 10 100 1K TIME ~ HOURS C360 lg FORWARD CURRENT mA C361 FREQUENCY - Hz C914 Fig. 1. LED Lifetime vs. Fig. 2. Forward Voltage vs. Fig. 3. Steady-State AC Voltage Forward Current Forward Current Limit of Isolation Dielectric vs. Line Frequency 10A GY - a 7 74 1A - V/] 7 | 2 / 28C TEST rd LIMIT MAX. < [Lf 100 mA f w efo, lof ; z 3 saps Z ag tty | Pik 10 mA x. | | ! 1mA L a 3 1 3 10 1008, 1k 10k 100k ANODE TO CATHODE VOLTAGE ~ V C362 Rek - 2 C363 Fig. 4. Anode Current vs. Fig. 5. Holding Current vs. Anode-Cathode Voltage Gate-Cathode ResistanceMCS2 M Vet V ELECTRO-OPTICAL CHARACTERISTIC CURVES (Cont'd) (25C Free Air Unless Otherwise Specified) 30 Rex 10 ka 20 20 ka < e 1-27 ka E fs I a ! z 2 ay ~~ 1k 10k 100k 10 20 30 40 Rex 22 264 Ip mA C1274 Fig. 6. Forward Current vs. Fig. 7. Trigger Delay Time vs. Gate-Cathode Resistance Foward Current (note 1) 150 1000 tt 125 E 100 5 w 100 a \ t0 gt oO wD a 8 E 10 < S50 QO t 5 a wo 25 < 0 01 0 25 50 75 100 -60 TEMPERATURE C C367 Fig. 9. Continuous Current Rating vs. Fig. Ambient Temperature 1.0 10 9 8 7 10 6 < E 5 i x A = we A 0 -60 -40 -20 0 TEMPERATURE C 20 40 60 80 100 C369 Fig. 11. Gate Trigger Voltage vs. Temperature 01 60 -40 ~20 0 20 40 TEMPERATURE C 60 80 6100 C370 Fig. 12. Holding Current vs. Temperature 500 200 100 50 Rex = 27k2 20 Cox = We 10 Rex = 27k2 PEAK FORWARD VOLTAGE VOLTS 2 1 0.1 0.8 MINIMUM CRITICAL dV/dt VOLTS/uSEC C366 2 10 50 200 1000 Fig. 8. Forward Blocking Voltage vs. Critical dV/dt -40 -20 0 20 40 TEMPERATURE C 60 80 100 C368 10 Forward Leakage Current vs. Temperature 100 ip mA 1.0 -60 -40 -20 Qa TEMPERATURE C 20 40 GO 80 100 C371 Fig. 13. Forward Current vs. Temperature S2400 usue MCS2 MCS2400 TYPICAL CIRCUIT APPLICATIONS = C372 OPERATING SCHEMATICS McS2 OC LOAD Vec R Ve _ ~/AAy--_ RL le | S 120 VRMS Vv. 60~ CONTROL SAT q INPUTS TTL GATE C135 RELAY CIRCUIT FOR HALF WAVE A.C. CONDUCTION NOTES 1. The rise time of the SCR is typically less than 500 nanoseconds.