MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon High-Power Transistors ... PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching clrcults such as relay or solenoid drivers, de-tode converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. e Current-Gain BandwidthProduct @ Ic = 1.0 Adc ff = 0.8 MHz (Min) NPN = 2.2 MHz (Min) - PNP e Safe Operating Area Rated to 60 V and 120 V, Respectively *MAXIMUM RATINGS 2NS055A | MJ15015 Rating Symbol MJ2955A | MJ15016 Unit CollectorEmitter Voltage VCEO 60 120 Vde Collactor-Base Voltage VcBO 100 200 Vde Collactor-Emitter Voltage Base VoEV 100 200 Vide Reversed Biased Emitter-Base Voltage VEBO 7.0 Vde Collector Current Continuous Io 15 Ade Base Current IB 7.0 Ade Total Device Dissipation @ Tc = 25C Pp 115 180 Watts Derate above 25C 0.65 1.03 WIC Operating and Storage Junction TJ: Tstg ~65 to +200 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Max Unit Thermal Resistance, Junction to Case RaJc 1.52 0.98 C/W * indicates JEDEC Registered Data. (2N3055A) 200 = 5 150 a MJ15015 G MJ15016 3 100 2 2N3055A = 80 MJ2955A o 0 2 60 7 100 125 150 175 To, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 200 NPN 2N3055A MJ15015* MJ2955A PNP MJ15016* *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 145, 180 WATTS CASE 1-07 TO-204AA (TO-3) Motorola Bipolar Power Transistor Device Data 3-52N3055A MJ15015 MJ2955A MJ15016 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol Min Max | Unit OFF CHARACTERISTICS (1) *Collector-Emitter Sustaining Voltage 2N3055A, MJ2955A VCEO(sus) 60 Vde (Ig = 200 mAde, Ip = 0) MJ15015, MJ15016 120 Collector Cutoff Current ICEO mAde (cE = 80 Vde, VBE;off) = 0 Vee) 2N3055A, MJ2955A, _ 0.7 (VCE = 60 Vde, VBE(offy = 0 Vdc) MJ15015, MJ15016 _ 0.4 Collector Cutoff Current 2N3055A, MJ2955A IcEV _ 5.0 mAdc (VCEV = Rated Value, VBE(off = 1.5 Vde) MJ15015, MJ15016 1.0 Collector Cutoff Current IcEV mAdc (VCEV = Rated Value, VBE (off) = 1.5 Vde, 2N3055A, MJ2955A _ 30 Tg = 150C) MJ15015, MJ15016 _ 6.0 Emitter Cutoff Current 2N3055A, MJ2955A lEBO 5.0 mAdc (VEB = 7.0 Vde, Ig = 0) MJ15015, MJ15016 0.2 SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased IS/b Adc (t = 0.5 8 non-repetitive) 2N3055A, MJ2955A 1.95 _ (VCE = 60 Vdc) MJ15015, MJ15016 3.0 _ *ON CHARACTERISTICS (1) BG Current Gain hfe _ (Ig = 4.0 Ade, Vg = 2.0 Vdc) 10 70 (Ilo = 4.0 Ade, VoE = 4.0 Vdc) 20 70 (Ig = 10 Adc, Vog = 4.0 Vde) 5.0 _ CollectorEmitter Saturation Voltage VGE(sat) Vde (Io = 4.0 Ade, Ip = 400 mAdc) _ 14 (Ig = 10 Ade, IB = 3.3 Ade) _~ 3.0 (Ic = 15 Ade, Ip = 7.0 Ade) 5.0 Base~Emitter On Voltage VBE(on} 0.7 1.8 Vde (Ic = 4.0 Adc, Vor = 4.0 Vde) *DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product 2N3055A, MJ15015 ft 0.8 6.0 MHz (IG = 1.0 Ade, VoE = 4.0 Vde, f = 1.0 MHz) MJ2955A, MJ15016 2.2 18 Output Capacitance Cob 60 600 pF (Vog = 10 Vde, IE = 0, f = 1.0 MHz) *SWITCHING CHARACTERISTICS (2N3055A only) RESISTIVE LOAD Delay Time ta _ 0.5 ps Rise Time . (VoG = 30 Vde, Ic = 4.0 Adc, tr _ 4.0 ys {B1 = IB = 0.4 Ade, Storage Time ty = 25 ps Duty Cycla = 2% ts _ 3.0 us Fall Time tt _ 6.0 ps (1) Pulse Test: Pulse Width = 300 ps, Duty Cycle =< 2%. "Indicates JEDEC Registered Data. (2N3055A) 3-6 Motorola Bipolar Power Transistor Device Data2N3055A MJ15015 MJ2955A MJ15016 200 B 28 5 Ty = 25C {00 Ty = 150C = 24 70 2 = 3 50 3 2 & im 30 & 16 20 E A 12 B10 Eo7 & 08 5 3 ul 2 S 0.2 0305 07 1 2 8 5 7 0 4 8.005 0.01 0.02 005 O01 02 O08 %1 2 5 Ig, COLLECTOR CURRENT (AMP) lg, BASE GURRENT (AMP) Figure 2, DC Current Gain Figure 3. Collector Saturation Region 3.5 2 To = 25C = 3 8 0s 3 MJ2955A e s = MJ15016 S 2 a : : 3 15 2N3055A = MJ15015 > 1 5 05 @ & @ Icllg = 10 fa {2 03 05 07 1 2 3 5 7 10 20 = 0.1 02 08 06 1.0 2.0 Ip, COLLECTOR CURRENT (AMP) Ig, COLLECTOR CURRENT (AMPS) Figure 4. On Voltages Figure 5. Current-Gain Bandwidth Product 10 7 5 Voc +30V 3 _ 2 = 759 = 25 ps wy #13V 300 SCOPE E ov o _ 0.5 ~1V | 1N6073 03 0.2 ty, fs 10 ns = DUTY CYCLE = 1.0% $V Ou 02 03 O58 O07 1 2 3 5 7 10 16 ic, COLLECTOR GURRENT (AMP) Figure 6, Switching Times Test Circuit Figure 7. TurnOn Time (Circuit shown Is for NPN) Motorola Bipolar Power Transistor Device Data 372N3055A MJ15015 MJ2955A MJ15016 10 7 400 -. Ty = 25C 5 2N3O55A 3 200 MJ15015 9 & MJ2955A g 3 MJ15016 W Of & 100 = 07 & 05 5 . Voc =30 S 50 igig = 10 Cop 0.3 ipi = |p2 02 Ty = 25C 30 02 03 05 O7 1 2 3 5 7 10 16 my 20 60 10 20 80 100 200 800 1000 Ic, COLLECTOR CURRENT (AMPS) Vp, REVERSE VOLTAGE (VOLTS) Figure 8. TurnOff Times Figure 9. Capacitances COLLECTOR CUT-OFF REGION NPN PNP 10,000 #000 FE Voe= 90 = 1000 z 100 3 3 i 100 G 10 fe Ty = 150C es Ty = 150C 5 3 a 10 & 1.0 Oo 5 100C & : 'o= {ces : 1 = 3 REVERSE FORWARD S REVERSE S 004 m0 26C - 0.01 0.001 +02 +01 O =-O1 -02 -08 -04 -05 02 -01 0 +04 402 403 +04 +05 Veg, BASE-EMITTER VOLTAGE (VOLTS) Vp, BASE-EMITTER VOLTAGE (VOLTS) Figure 10. 2N3055A, MJ15015 Figure 11. MJ2955A, MJ15016 20 20 eS = 10 = 10 z Ee = q 50 Be 3B 5 B o9 Oo B > e 1.0 Lu A - BONDING WIRE LIMIT 3 E - BONDING WIRE LIMIT & 2} THERMAL LIMIT @ Tg = 25C . 05 ~ THERMAL LIMIT @ Tg = 25C 3 0. (SINGLE PULSE) SECOND BREAKDOWN LIMIT 10 20 60 100 Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Forward Bias Safe Operating Area 2NS055A, MJ2955A There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe Operating area curves indicate Ic ~ VcE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- (SINGLE PULSE) SECOND BREAKDOWN LIMIT dc o to 15 20 30 60 100-120 Voe, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016 tion than the curves indicate. The data of Figures 12 and 13 is based on To = 25C; TJ(pk) is variable depending on power level. Second break- down pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. 3-8 Motorola Bipolar Power Transistor Device Data