BFP760 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2013-08-05 RF & Protection Devices Edition 2013-08-05 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP760 BFP760, Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2013-08-05, Revision 1.1 Page Subjects (major changes since last revision) This data sheet replaces the revision from 2012-12-04. Pages 14,15,16: Fig. 5-2, 5-4, 5-5, 5-6 corrected. Table 5-4: outlier value for OIP3 corrected. Trademarks of Infineon Technologies AG AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, EconoPACKTM, CoolMOSTM, CoolSETTM, CORECONTROLTM, CROSSAVETM, DAVETM, DI-POLTM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPIMTM, EconoPACKTM, EiceDRIVERTM, eupecTM, FCOSTM, HITFETTM, HybridPACKTM, IRFTM, ISOFACETM, IsoPACKTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OptiMOSTM, ORIGATM, POWERCODETM; PRIMARIONTM, PrimePACKTM, PrimeSTACKTM, PRO-SILTM, PROFETTM, RASICTM, ReverSaveTM, SatRICTM, SIEGETTM, SINDRIONTM, SIPMOSTM, SmartLEWISTM, SOLID FLASHTM, TEMPFETTM, thinQ!TM, TRENCHSTOPTM, TriCoreTM. Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, KEILTM, PRIMECELLTM, REALVIEWTM, THUMBTM, VisionTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Satellite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.1, 2013-08-05 BFP760 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 5.4 5.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Data Sheet 4 11 11 11 12 15 18 Revision 1.1, 2013-08-05 BFP760 List of Figures List of Figures Figure 4-1 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Figure 5-9 Figure 5-10 Figure 5-11 Figure 5-12 Figure 5-13 Figure 5-14 Figure 5-15 Figure 5-16 Figure 5-17 Figure 5-18 Figure 5-19 Figure 5-20 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP760 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in A. . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 , VCE, f = Parameters . . . . . . . . . . . . . . . . . 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 5.5 GHz . . . . . . . Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 5.5 GHz . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma, Gms, IS21I = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Reflection Coefficient S11 = f (f), VCE = 3 V, IC = 10 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 10 / 30 mA . . . . . . . . . . Output Reflection Coefficient S22 = f (f), VCE = 3 V, IC = 10 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 , f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Example (Marking BFP760: R6s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 12 15 15 16 16 17 18 18 19 19 20 20 21 21 22 22 23 23 24 24 26 26 26 26 Revision 1.1, 2013-08-05 BFP760 List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Data Sheet Maximum Ratings at TA = 25 C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 1.8 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision 1.1, 2013-08-05 BFP760 Product Brief 1 Product Brief The BFP760 is a linear and very low noise wideband NPN bipolar RF transistor. The device is based on Infineon's reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 70 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads. Data Sheet 7 Revision 1.1, 2013-08-05 BFP760 Features 2 * * * * * * * * Features Very low noise amplifier based on Infineons reliable, high volume SiGe:C technology High linearity OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA High transition frequency fT = 45 GHz @ 1 GHz, 3 V, 35mA NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA Maximum power gain Gms = 21.5 dB @ 3.5 GHz, 3 V, 30 mA Low power consumption, ideal for mobile applications Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads Qualification report according to AEC-Q101 available 3 2 4 1 Applications As Low Noise Amplifier (LNA) in * * * * * Mobile and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5 GHz, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, buffer amplifier in VCOs Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package Pin Configuration BFP760 SOT343 1=B Data Sheet 2=E 8 Marking 3=C 4=E R6s Revision 1.1, 2013-08-05 BFP760 Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at TA = 25 C (unless otherwise specified) Parameter Symbol Collector emitter voltage Values Min. Max. - - 4.0 3.5 VCEO Unit V Note / Test Condition Open base TA = 25 C TA = -55 C Collector emitter voltage VCES - 13 V E-B short circuited Collector base voltage VCBO - 13 V Open emitter Emitter base voltage VEBO - 1.2 V Open collector Collector current IC - 70 mA - IB - 4 mA - Ptot - 240 mW TS 95 C Junction temperature TJ - 150 C - Storage temperature TStg -55 150 C - Base current Total power dissipation 1) 1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 1.1, 2013-08-05 BFP760 Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS - 230 - K/W - 1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 280 240 Ptot [mW] 200 160 120 80 40 0 0 25 50 75 T [C] 100 125 150 S Figure 4-1 Total Power Dissipation Ptot = f (Ts) Data Sheet 10 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Min. Typ. Max. 4 4.7 - Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base Collector emitter leakage current ICES - 10 1 1) 400 401) nA VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0 E-B short circuited Collector base leakage current ICBO - 1 40 1) 1) nA VCB = 5V, IE = 0 Open emitter Emitter base leakage current IEBO - 1 40 DC current gain hFE 160 250 400 nA VEB = 0.5V, IC = 0 Open collector VCE = 3 V, IC = 35 mA Pulse measured 1) Maximum values not limited by the device but by the short cycle time of the 100% test 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 C Parameter Transition frequency Symbol fT Values Min. Typ. Max. - 45 - Unit Note / Test Condition GHz VCE = 3 V, IC = 35 mA f = 1 GHz Collector base capacitance CCB - 0.13 0.2 pF VCB = 3 V, VBE = 0 f = 1 MHz Emitter grounded Collector emitter capacitance CCE - 0.42 - pF VCE = 3 V, VBE = 0 f = 1 MHz Base grounded Emitter base capacitance CEB - 0.65 - pF VEB = 0.5 V, VCB = 0 f = 1 MHz Collector grounded Data Sheet 11 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T's in a 50 system, TA = 25 C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 5-1 BFP760 Testing Circuit Data Sheet 12 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics Table 5-3 AC Characteristics, VCE = 3 V, f = 0.9 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Power gain dB Maximum power gain Transducer gain Gms |S21| 2 - 29 - IC = 30 mA - 28 - IC = 30 mA Minimum Noise Figure dB Minimum noise figure NFmin - 0.5 - IC = 10 mA Associated gain Gass - 25.5 - IC = 10 mA Linearity dBm ZS = ZL = 50 1 dB compression point at output OP1dB - 14 - IC = 30 mA 3rd order intercept point at output OIP3 - 27 - IC = 30 mA Table 5-4 AC Characteristics, VCE = 3 V, f = 1.8 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Power gain dB Maximum power gain Transducer gain Gms |S21| 2 - 25 - IC = 30 mA - 22 - IC = 30 mA Minimum Noise Figure dB Minimum noise figure NFmin - 0.55 - IC = 10 mA Associated gain Gass - 20.5 - IC = 10 mA Linearity dBm ZS = ZL = 50 1 dB compression point at output OP1dB - 14.5 - IC = 30 mA 3rd order intercept point at output OIP3 - 28 - IC = 30 mA Table 5-5 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Unit Max. Power gain Maximum power gain Transducer gain Note / Test Condition dB Gms |S21| 2 - 23.5 - IC = 30 mA - 20 - IC = 30 mA Minimum Noise Figure dB Minimum noise figure NFmin - 0.6 - IC = 10 mA Associated gain Gass - 19 - IC = 10 mA Linearity dBm ZS = ZL = 50 1 dB compression point at output OP1dB - 14 - IC = 30 mA 3rd order intercept point at output OIP3 - 28 - IC = 30 mA Data Sheet 13 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics Table 5-6 AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Power gain dB Maximum power gain Transducer gain Gms |S21| 2 - 21.5 - IC = 30 mA - 16.5 - IC = 30 mA Minimum Noise Figure dB Minimum noise figure NFmin - 0.7 - IC = 10 mA Associated gain Gass - 16 - IC = 10 mA Linearity dBm ZS = ZL = 50 1 dB compression point at output OP1dB - 14.5 - IC = 30 mA 3rd order intercept point at output OIP3 - 28.5 - IC = 30 mA Table 5-7 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Unit Max. Power gain Maximum power gain Transducer gain Note / Test Condition dB Gms |S21| 2 - 16.5 - IC = 30 mA - 12 - IC = 30 mA Minimum Noise Figure dB Minimum noise figure NFmin - 0.95 - IC = 10 mA Associated gain Gass - 12.5 - IC = 10 mA Linearity dBm ZS = ZL = 50 1 dB compression point at output OP1dB - 13 - IC = 30 mA 3rd order intercept point at output OIP3 - 27 - IC = 30 mA Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.2 MHz to 12 GHz Data Sheet 14 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics 5.4 Characteristic DC Diagrams 55 50 220A 45 200A 180A 40 IC [mA] 160A 35 140A 30 120A 100A 25 80A 20 60A 15 40A 10 20A 5 0 0 0.5 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in A 3 hFE 10 2 10 0 10 1 10 I [mA] 2 10 C Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V Data Sheet 15 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics 2 10 1 10 0 IC [mA] 10 -1 10 -2 10 -3 10 -4 10 0.5 0.55 0.6 0.65 0.7 VBE [V] 0.75 0.8 0.85 Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V 0 10 -1 10 -2 IB [mA] 10 -3 10 -4 10 -5 10 -6 10 0.5 0.55 0.6 0.65 0.7 VBE [V] 0.75 0.8 0.85 Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V Data Sheet 16 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics -11 IB [A] 10 -12 10 -13 10 0.6 0.7 0.8 0.9 VEB [V] 1 1.1 1.2 Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V Data Sheet 17 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics 5.5 Characteristic AC Diagrams 50 45 4.00V 3.50V 40 3.00V fT [GHz] 35 30 2.50V 25 20 2.00V 15 10 1.50V 1.00V 5 0 0 10 20 30 40 I [mA] 50 60 70 80 C Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V 30 25 OIP3 [dBm] 20 15 2V, 2400MHz 3V, 2400MHz 2V, 5500MHz 3V, 5500MHz 10 5 0 0 10 20 30 40 50 I [mA] C Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 , VCE, f = Parameters Data Sheet 18 Revision 1.1, 2013-08-05 BFP760 45 26 22 23 24 25 18 19 20 21 50 1 32 4 5 76 8 190 11 1132 15 16 17 Electrical Characteristics 27 28 28 27 26 25 IC [mA] 35 11 1132 15 1 16 4 17 18 19 20 21 22 23 24 40 30 25 26 27 25 24 23 22 21 20 19 18 17 16 15 20 15 14 10 26 1 1.5 2 2.5 VCE [V] 3 3.5 4 14 10 9 14 13 11 5 3 30 12 4 6 7 - 0-1 2 35 15 2 1 40 8 Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 5.5 GHz 8 12 10 7 25 4 IC [mA] 13 9 4 8 7 6 5 4 5 15 6 20 10 5 0 -2-1 1 1 1.5 2 3 12 11 12 0 -2-1 -3 -4 2 2.5 VCE [V] 3 11 10 9 8 7 6 5 4 -3 0 -2-1 3 10 9 8 7 6 5 12 3.5 3 -3 4 Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 5.5 GHz Data Sheet 19 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics 0.28 0.24 CCB [pF] 0.2 0.16 0.12 0.08 0.04 0 0 0.6 1.2 1.8 V CB 2.4 3 [V] Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 45 40 35 30 G G [dB] ms 25 20 G ma 15 2 |S21| 10 5 0 0 1 2 3 4 5 f [G] 6 7 8 9 10 Figure 5-12 Gain Gma, Gms, IS21I = f (f), VCE = 3 V, IC = 30 mA Data Sheet 20 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz Gmax [dB] 25 20 3.50GHz 15 5.50GHz 10.00GHz 10 5 0 0 10 20 30 40 50 I [mA] 60 70 80 90 C Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz G max 25 20 5.50GHz 15 10.00GHz 10 5 0 0 0.5 1 1.5 2 V 2.5 3 [V] 3.5 4 4.5 5 CE Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz Data Sheet 21 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics 1 1.5 10.0 0.5 9.0 0.4 7.0 0.3 6.0 8.0 3 7.0 6.0 4 5.0 5.0 0.2 2 10.0 9.0 8.0 5 4.0 0.03 to 10 GHz 4.0 0.1 10 3.0 0.1 0 3.0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 2.0 0.03 0.03 -0.1 -10 2.0 -0.2 1.0 -5 -4 -0.3 -3 -0.4 1.0 -0.5 -2 -1.5 30mA -1 10mA Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 3 V, IC = 10 / 30 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.1 2.4 1.8 3.5 0.1 0 0.2 0.3 0.4 0.5 0.9 1.8 1 1.5 10 0.9 2 3 4 5 2.4 3.5 5.5 -0.1 -10 5.5 8.0 -0.2 -5 8.0 -4 -0.3 -3 -0.4 -0.5 -2 -1.5 -1 30mA 10mA Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 10 / 30 mA Data Sheet 22 Revision 1.1, 2013-08-05 BFP760 Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 10.0 10.0 4 9.0 9.0 0.2 5 8.0 8.0 0.1 7.0 6.0 0.1 0 0.2 0.3 0.4 5.0 0.5 0.03 to 10 GHz 7.0 6.0 10 5.0 4.0 1 1.5 2 3 4 5 3.0 4.0 0.03 0.03 2.0 -0.1 -10 3.0 -0.2 2.0 1.0 -5 -4 -0.3 1.0 -3 -0.4 -0.5 -2 -1.5 -1 30mA 10mA Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 3 V, IC = 10 / 30 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 IC = 30mA 0.6 I = 10mA C 0.4 0.2 0 0 1 2 3 4 f [GHz] 5 6 7 8 Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt Data Sheet 23 Revision 1.1, 2013-08-05 BFP760 NFmin [dB] Electrical Characteristics 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 f = 8GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz 0 5 10 15 20 IC [mA] 25 30 35 40 Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz 6 5.5 5 4.5 f = 8GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz NF50 [dB] 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 IC [mA] 25 30 35 40 Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 , f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 C Data Sheet 24 Revision 1.1, 2013-08-05 BFP760 Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFP760 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP760 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 25 Revision 1.1, 2013-08-05 BFP760 Package Information SOT343 7 Package Information SOT343 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.15 -0.05 +0.1 0.6 -0.05 0.2 M A SOT343-PO V08 Figure 7-1 Package Outline 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 7-2 Package Footprint Date code (YM) 2005, June 56 Type code XYs Manufacturer Pin 1 Figure 7-3 Marking Example (Marking BFP760: R6s) 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 7-4 Tape Dimensions Data Sheet 26 Revision 1.1, 2013-08-05 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BFP760H6327XTSA1