RF & Protection Devices
Data Sheet
Revision 1.1, 2013-08-05
BFP760
Low Noise Silicon Germanium Bipolar RF Transistor
Edition 2013-08-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP760
Data Sheet 3 Revision 1.1, 2013-08-05
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
BFP760, Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2013-08-05, Revision 1.1
Page Subjects (major changes since last revision)
This data sheet replaces the revision from 2012-12-04.
Pages 14,15,16: Fig. 5-2, 5-4, 5-5, 5-6 corrected.
Table 5-4: outlier value for OIP3 corrected.
BFP760
Table of Contents
Data Sheet 4 Revision 1.1, 2013-08-05
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table of Contents
BFP760
List of Figures
Data Sheet 5 Revision 1.1, 2013-08-05
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP760 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA. . . . . . . . . . . . . 15
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 16
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 18
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz. . . . . . . 19
Figure 5-10 Compression Point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . 19
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-12 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 21
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 3 V, IC = 10 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 10 / 30 mA . . . . . . . . . . 22
Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 3 V, IC = 10 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . 24
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 24
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-3 Marking Example (Marking BFP760: R6s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
List of Figures
BFP760
List of Tables
Data Sheet 6 Revision 1.1, 2013-08-05
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-2 General AC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-3 AC Characteristics, VCE = 3 V, f= 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-4 AC Characteristics, VCE = 3 V, f= 1.8 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-5 AC Characteristics, VCE = 3 V, f= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-6 AC Characteristics, VCE = 3 V, f= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-7 AC Characteristics, VCE = 3 V, f= 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
List of Tables
BFP760
Product Brief
Data Sheet 7 Revision 1.1, 2013-08-05
1 Product Brief
The BFP760 is a linear and very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to VCEO = 4.0 V and currents up to IC = 70 mA. With its high linearity at currents as low as 10
mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately
45 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device
is housed in an easy to use plastic package with visible leads.
BFP760
Features
Data Sheet 8 Revision 1.1, 2013-08-05
2 Features
Applications
As Low Noise Amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5 GHz, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, buffer amplifier in VCOs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
• Very low noise amplifier based on Infineon´s reliable,
high volume SiGe:C technology
• High linearity OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
• High transition frequency fT = 45 GHz @ 1 GHz, 3 V, 35mA
•NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
• Maximum power gain Gms = 21.5 dB @ 3.5 GHz, 3 V, 30 mA
• Low power consumption, ideal for mobile applications
• Easy to use Pb-free (RoHS compliant) and halogen-free
standard package with visible leads
• Qualification report according to AEC-Q101 available
Product Name Package Pin Configuration Marking
BFP760 SOT343 1 = B 2 = E 3 = C 4 = E R6s
12
3
4
BFP760
Maximum Ratings
Data Sheet 9 Revision 1.1, 2013-08-05
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO
–
–
4.0
3.5
V Open base
TA = 25 °C
TA = -55 °C
Collector emitter voltage VCES – 13 V E-B short circuited
Collector base voltage VCBO – 13 V Open emitter
Emitter base voltage VEBO – 1.2 V Open collector
Collector current IC–70 mA–
Base current IB–4 mA–
Total power dissipation1)
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot –240mWTS ≤ 95 °C
Junction temperature TJ–150°C–
Storage temperature TStg -55 150 °C –
BFP760
Thermal Characteristics
Data Sheet 10 Revision 1.1, 2013-08-05
4 Thermal Characteristics
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Table 4-1 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
RthJS –230–K/W–
0 25 50 75 100 125 150
0
40
80
120
160
200
240
280
TS [°C]
Ptot [mW]
BFP760
Electrical Characteristics
Data Sheet 11 Revision 1.1, 2013-08-05
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 44.7–VIC=1mA, IB=0
Open base
Collector emitter leakage current ICES –10
1
4001)
401)
1) Maximum values not limited by the device but by the short cycle time of the 100% test
nA VCE =13 V, VBE =0
VCE =5 V, VBE =0
E-B short circuited
Collector base leakage current ICBO –140
1) nA VCB =5V, IE=0
Open emitter
Emitter base leakage current IEBO –140
1) nA VEB =0.5V, IC=0
Open collector
DC current gain hFE 160 250 400 VCE =3V, IC= 35 mA
Pulse measured
Table 5-2 General AC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT–45–GHzVCE =3V, IC=35mA
f=1GHz
Collector base capacitance CCB – 0.13 0.2 pF VCB =3V, VBE =0
f=1MHz
Emitter grounded
Collector emitter capacitance CCE –0.42–pFVCE =3V, VBE =0
f=1MHz
Base grounded
Emitter base capacitance CEB –0.65–pFVEB =0.5V, VCB =0
f=1MHz
Collector grounded
BFP760
Electrical Characteristics
Data Sheet 12 Revision 1.1, 2013-08-05
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 5-1 BFP760 Testing Circuit
IN
OUT
Bias -T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
BFP760
Electrical Characteristics
Data Sheet 13 Revision 1.1, 2013-08-05
Table 5-3 AC Characteristics, VCE = 3 V, f= 0.9 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –29– IC=30mA
Transducer gain |S21|2–28– IC=30mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.5– IC=10mA
Associated gain Gass –25.5– IC=10mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –14– IC=30mA
3rd order intercept point at output OIP3–27– IC=30mA
Table 5-4 AC Characteristics, VCE = 3 V, f= 1.8 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –25– IC=30mA
Transducer gain |S21|2–22– IC=30mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.55– IC=10mA
Associated gain Gass –20.5– IC=10mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –14.5– IC=30mA
3rd order intercept point at output OIP3–28– IC=30mA
Table 5-5 AC Characteristics, VCE = 3 V, f= 2.4 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –23.5– IC=30mA
Transducer gain |S21|2–20– IC=30mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.6– IC=10mA
Associated gain Gass –19– IC=10mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –14– IC=30mA
3rd order intercept point at output OIP3–28– IC=30mA
BFP760
Electrical Characteristics
Data Sheet 14 Revision 1.1, 2013-08-05
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω
from 0.2 MHz to 12 GHz
Table 5-6 AC Characteristics, VCE = 3 V, f= 3.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –21.5– IC=30mA
Transducer gain |S21|2–16.5– IC=30mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.7– IC=10mA
Associated gain Gass –16– IC=10mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –14.5– IC=30mA
3rd order intercept point at output OIP3–28.5– IC=30mA
Table 5-7 AC Characteristics, VCE = 3 V, f= 5.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power gain dB
Maximum power gain Gms –16.5– IC=30mA
Transducer gain |S21|2–12– IC=30mA
Minimum Noise Figure dB
Minimum noise figure NFmin –0.95– IC=10mA
Associated gain Gass –12.5– IC=10mA
Linearity dBm ZS= ZL=50 Ω
1 dB compression point at output OP1dB –13– IC=30mA
3rd order intercept point at output OIP3–27– IC=30mA
BFP760
Electrical Characteristics
Data Sheet 15 Revision 1.1, 2013-08-05
5.4 Characteristic DC Diagrams
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
5
10
15
20
25
30
35
40
45
50
55
VCE [V]
IC [mA]
20μA
40μA
60μA
80μA
100μA
120μA
140μA
160μA
180μA
200μA
220μA
100101102
102
103
IC [mA]
hFE
BFP760
Electrical Characteristics
Data Sheet 16 Revision 1.1, 2013-08-05
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85
10−4
10−3
10−2
10−1
100
101
102
VBE [V]
IC [mA]
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85
10−6
10−5
10−4
10−3
10−2
10−1
100
VBE [V]
IB [mA]
BFP760
Electrical Characteristics
Data Sheet 17 Revision 1.1, 2013-08-05
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
0.6 0.7 0.8 0.9 1 1.1 1.2
10−13
10−12
10−11
VEB [V]
IB [A]
BFP760
Electrical Characteristics
Data Sheet 18 Revision 1.1, 2013-08-05
5.5 Characteristic AC Diagrams
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
0 10 20 30 40 50 60 70 80
0
5
10
15
20
25
30
35
40
45
50
3.50V
3.00V
2.50V
2.00V
1.50V
1.00V
IC [mA]
fT [GHz]
4.00V
0 10 20 30 40 50
0
5
10
15
20
25
30
IC [mA]
OIP3 [dBm]
2V, 2400MHz
3V, 2400MHz
2V, 5500MHz
3V, 5500MHz
BFP760
Electrical Characteristics
Data Sheet 19 Revision 1.1, 2013-08-05
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
Figure 5-10 Compression Point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
1
2
3
4
5
6
7
8
9
10
1
1
11
12
1
2
13
1
3
14
14
15
15
15
16
16
16
17
17
1
7
18
18
1
8
19
19
1
9
20
20
2
0
21
21
21
22
22
2
2
23
23
23
24
24
24
25
25
25
26
26
26
26
27
27
2
7
28
28
VCE [V]
IC [mA]
1 1.5 2 2.5 3 3.5 4
10
15
20
25
30
35
40
45
50
−4 −3
−3
−3
−2
−2
−2
−2
−1
−1
−1
−1
0
0
0
0
1
1
1
1
2
2
2
2
3
3
3
3
4
4
4
4
4
5
5
5
5
5
6
6
6
6
6
7
7
7
7
7
8
8
8
8
8
9
9
9
9
10
10
10
10
11
11
11
12
12
12
13
13
14
14
15
VCE [V]
IC [mA]
1 1.5 2 2.5 3 3.5 4
5
10
15
20
25
30
35
40
BFP760
Electrical Characteristics
Data Sheet 20 Revision 1.1, 2013-08-05
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 5-12 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA
0 0.6 1.2 1.8 2.4 3
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
VCB [V]
CCB [pF]
0 1 2 3 4 5 6 7 8 9 10
0
5
10
15
20
25
30
35
40
45
f [G]
G [dB]
Gms
Gma
|S21|2
BFP760
Electrical Characteristics
Data Sheet 21 Revision 1.1, 2013-08-05
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz
0 10 20 30 40 50 60 70 80 90
0
5
10
15
20
25
30
35
40
IC [mA]
Gmax [dB]
10.00GHz
5.50GHz
3.50GHz
0.90GHz
0.45GHz
2.40GHz
1.90GHz
1.50GHz
0.15GHz
BFP760
Electrical Characteristics
Data Sheet 22 Revision 1.1, 2013-08-05
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 3 V, IC = 10 / 30 mA
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 10 / 30 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03
0.03 to 10 GHz
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.010.0
0.03
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
30mA
10mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.9
1.8 2.4
3.5
5.5
8.0
0.9
1.8
2.4
3.5
5.5
8.0
30mA
10mA
BFP760
Electrical Characteristics
Data Sheet 23 Revision 1.1, 2013-08-05
Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 3 V, IC = 10 / 30 mA
Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
10.0
0.03
0.03 to 10 GHz
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.03
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
30mA
10mA
0 1 2 3 4 5 6 7 8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
f [GHz]
NFmin [dB]
IC = 10mA
IC = 30mA
BFP760
Electrical Characteristics
Data Sheet 24 Revision 1.1, 2013-08-05
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA=25°C
0 5 10 15 20 25 30 35 40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
IC [mA]
NFmin [dB]
f = 0.9GHz
f = 1.8GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 8GHz
0 5 10 15 20 25 30 35 40
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
IC [mA]
NF50 [dB]
f = 0.9GHz
f = 1.8GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 8GHz
BFP760
Simulation Data
Data Sheet 25 Revision 1.1, 2013-08-05
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP760 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP760 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
BFP760
Package Information SOT343
Data Sheet 26 Revision 1.1, 2013-08-05
7 Package Information SOT343
Figure 7-1 Package Outline
Figure 7-2 Package Footprint
Figure 7-3 Marking Example (Marking BFP760: R6s)
Figure 7-4 Tape Dimensions
SOT343-PO
V08
1.25 ±0.1
0.1 MAX.
2.1±0.1
0.15
+0.1
-0.05
0.3
+0.1
2
±0.2
±0.1
0.9
3
2
4
1
A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
0.6
SOT343-FP
V08
0.8
1.6
1.15
0.9
XYs
56
Date code (YM)
2005, June
Type code
Manufacturer
Pin 1
SOT323-TP V02
0.2
4
2.15
8
2.3
1.1
Pin 1
Published by Infineon Technologies AG
www.infineon.com
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