2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm * High emitter-base voltage: VEBO = 25 V (min) * High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) * Low on resistance: RON = 1 (typ.) (IB = 5 mA) * High DC current gain: hFE = 200~1200 * Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Base current IB 60 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Tstg -55~125 C Storage temperature range JEDEC JEITA SC-70 TOSHIBA 2-2E1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.006 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 2SC4213 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 0.1 A Emitter cut-off current IEBO VEB = 25 V, IC = 0 0.1 A VCE = 2 V, IC = 4 mA 200 1200 VCE (sat) IC = 30 A, IB = 3 mA 0.042 0.1 V Base-emitter voltage VBE VCE = 2 V, IC = 4 mA 0.61 V Transition frequency fT VCE = 6 V, IC = 4 mA 30 MHz VCB = 10 V, IE = 0, f = 1 MHz 4.8 7 pF hFE DC current gain (Note) Collector-emitter saturation voltage Collector output capacitance Switching time Cob Turn-on time ton 160 Storage time tstg 500 130 Fall time tf Duty cycle < = 2% ns Note: hFE classification A: 200~700, B: 350~1200 2 2007-11-01 2SC4213 3 2007-11-01 2SC4213 4 2007-11-01 2SC4213 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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