Data Sheet
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Schottky barrier diode
RB751S-40
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low current rectification
Features
1) Ultra small mold type. (EMD2)
2) Low VF
3) High reliability
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
Io mA
IFSM mA
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions
VF- - 0.37 V IF=1mA
IR- - 0.5 μAVR=30V
Ct - 2 - pF VR=1V , f=1MHz
Parameter Limits
Reverse voltage (repetitive peak) 40
Reverse voltage (DC) 30
Average retified forward current 30
Storage temperature -40 to +125
Forward currnt surge peak(60Hz/1cyc) 200
Junction temperature 125
Parameter
Forward voltage
Reverse current
Capacitance between terminals
EMD2
0.8
1.7
0.6
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
dot (year week factory)
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
0.95±0.06
0
4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.05
3.5±0.05 1.75±0.1
8.0±0.15
0.2±0.05
0.76±0.05
1.26±0.05
0
φ0.5
0.6
2.0±0.05
1.3±0.06
0
2.45±0.1
空ポケット
0.2
φ1.55±0.05
2.40±0.05
0.90±0.05 0.75±0.05
1.250.06
0
1.25 0.06
0
Empty p o cket
1/3 2011.03 - Rev.C
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Data Sheet
RB751S-40
Electrical characteristic curves
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DIPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 100
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.001
0.01
0.1
1
10
100
1000
0102030
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0
100
200
300
400
500
600
700
800
900
1000
AVE:185.5nA
Ta=25℃
VR=30V
n=30pcs
0
5
10
15
20
AVE:7.30A
8.3ms
Ifsm 1cyc
0
5
10
15
20
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
3
4
5
6
7
8
9
10
1 10 100
t
Ifsm
0.00
0.01
0.02
0.03
0.04
0.00 0.01 0.02 0.03 0.04 0.05
Sin(θ＝180)
D=1/2
DC
0
0.001
0.002
0.003
0 102030
Sin(θ＝180)
DC D=1/2
0.1
1
10
0102030
f=1MHz
VF分布
250
260
270
280
290
300
AVE:267.4mV
Ta=25℃
IF=1mA
n=30pcs
10
100
1000
10000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mou nt e d on epox y bo ard
0
1
2
3
4
5
6
7
8
9
10
AVE:2.00pF
Ta=25℃
f=1MHz
VR=1V
n=10pcs
2/3 2011.03 - Rev.C
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB751S-40
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
D=1/2
DC
Sin(θ＝180)
0
0.02
0.04
0.06
0.08
0.1
0 255075100125
DC
D=1/2
Sin(θ＝180)
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
3/3 2011.03 - Rev.C
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes