o3 pe Pl osasuys nooo4a? 4 i O3E 00487 Dp JF-O7-/G9 Hyperabrupt Tuning Varactors, DKV6510 Series ALPHA IND/ SEMICONDUCTOR 0585443 ALPHA IND/ SEMICONDUCTOR Features Medium to High Frequency Operation * Guaranteed 10:1 Tuning Ratio from 2 to 10 Volts Qof 800 at 1 MHz Typical N Description Alpha uses ion implantation to provide this series of hyperabrupt tuning diodes with closely controlled char- acteristics. The highly reproducible capacitance versus voltage behavior of this family permits Alpha to supply matched sets and also assures the customer of long- term availability of parts having uniform electrical prop- erties. Passivated, hermetically sealed construction allows their use under the most adverse conditions, both in commercial equipment and in high reliability space and military applications. Applications Designer oriented families offer types selected and tested with each customers application in mind. Pre- mium units DKV6510B and DKV6515B through DKV6518B tune up to 30 MHz with frequency ratios as high as 4 to 1 and can be used up to 300 MHz in oscil- lators. Alphas DKV6510A and DKV6515A through DKV6518A diodes tune over 4 to 1 frequency ratios up to 10MHz and are also ideal for wide deviation voltage- tuned crystal oscillators. The DKV6510 and DKV6515 through DKV6518 series are suited to applications where economy is a prime consideration and may be used as replacements for devices which are not ion- implanted, with, in most cases, performance advan- tages. Low frequency oscillators, voltage-tuned filters, VCXO/TCXO modules, and frequency/phase modula- tors using Alphas DKV6510 series achieve new levels of frequency swing and linearity. Absolute Maximum Ratings Symbol Parameter Value Unit Vr Reverse Voltage Same as Var Ie Forward Current 50 mAdc Pp Power Dissipation 250 mw (T, = 25C) Ty Junction Temperature | -55to +125 | C Tstg | Storage Temperature | 55 to +175 C 600 400 300 200 : \ wf roo PSS = \ = 80; \ o = 60 w a 40;- 6 DKV-6518B 30-- Ne 20 XN OKV-65178 _| NS... 10} oe Sst 6} DKV-6510B 1 l 1 Ce 1 2 3 4 &G 10 20 REVERSE VOLTAGE, Vp (Vac) Figure 1. Typical Capacitance vs. Tuning Voltage (Ta = 25C) 3-67o3 pe Bosasuya oooo4s8s Oo 0585443 ALPHA IND/ SEMICONDUCTOR 03E 00488 DB T"O07-/G Hyperabrupt Tuning Varactors, DK V6510 Series 300 600 CO 500 200 400 - enc| DKV 65108 1300 DKV6515B b000; f= 10MHz 65168 1200 | OKV--6510 SERIES 4000 6517B oS 65188 e110 ; 3000 fj 5 & o Uff 1000 2000 ul o = 900 < = o E 1000 2 & S soo} = 800 o 3 S ws 600 a 700 2 3 = 400 = w o o aw c > & a Ww a = wi - 80 300 }-- 60 I | | | 1 23 4 6 8 HO %0 2008 7 1 +t REVERSE VOLTAGE, Vj (Vde) REVERSE VOLTAGE, Vp (Vdc) Figure 2. Typical Q vs. Tuning Voltage (T, = 25C) Figure 3. Temperature Coefficient of Capacitance vs. Tuning Voltage (T, = 25C) 2000 40 = DKV-0810 SERIES Vp #10 Vee 1000 Vp =2 Vee 200 R 800} soo 100 400 3 ty 200} & go e Xa i 5 20- = = %, : 3 4 = 2 100-- & oe 3 g = aol @ cS iL 20 08 aa 10 J ! j z 3 6 8 10 20304060 a0 100 a2 FREQUENCY, f (MHz) 8 | | ! ! I g 20 6 @ W Too va AMBIENT TEMPERATURE, Ty (*C} Figure 4. Typical Q vs. Frequency (T,= 25C) Figure 5. Reverse Leakage Current vs. Ambient Temperature 3-68ALPHA IND/ SEMICONDUCTOR 0585443 ALPHA IND/ SEMICONDUCTOR os pe fosasuys o0004a49 1 i D3E 00489 D 7-07-19 Hyperabrupt Tuning Varactors, DKV6510 Series EQUIVALENT SERIES RESISTANCE, Rg (ohms} DKV-65108 2 3064 6 REVERSE VOLTAGE, Vp (Vee) 40 20 Figure 6. Equivalent Series Resistance vs. Tuning Voltage (T, = 25C) +08 OKV~G510 SERIES Va c4 Vdc a) Cy (Tp) RELATIVE DIODE CAPACITANCE, Figure 7. Electrical Characteristics (T, = 25C) WA 1 Vie Yo 5 Vde Li vee | a 50 rT 100 12! AMBIENT TEMPERATURE, Tp (C) Capacitance vs. Ambient Temperature DKV6510 SERIES Symbol Ver tr Cr Ta Reverse Reverse Parameter Breakdown Leakage Diode Capacitance Tuning Ratio Voltage Current Unit Vde nAdc pf Test f = 1MHz f= 1MHz Conditions ta= Top Adc Va=10Vde [VRa=1.25Vdc| V_a=2Vde Vas7Vde | Va=10Vde |C(1.25v\/C(7Vv)| C(2v)/C(10v) Type Number for 099 Type Number Min. Max Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max, | Min. | Max. | Min. | Max. Package for Chip() DKV6510 CKV2020-01 12 1000 45 10 DKV6510A CKV2020-02 12 100 45 75 4 7 10 7 DKV6510B CKV2020-03 12 50 45 75 7 10 17 DKV6515 CKV2020-04 12 1000 100 13 10 DKV6515A CKV2020-05 12 100 100 160 8 13 10 17.5 OKV6515B CKV2020-06 12 50 100 150 8 13 10 17.6 DKV6516 CKV2020-07 12 1000 140 18 10 DKV6516A CKV2020-08 12 100 140 210 11 18 10 7 DKV6516B CKV2020-09 12 50 140 210 n 18 10 7 DKV6517 CKV2020-10 12 1000 180 22 40 DKV6517A CKV2020-11 12 100 180 270 14 22 10 7 DKV6517B CKV2020-12 12 50 180 270 14 22 10 7 DKV6516(2) CKV2020-13 12 2000 450 40 12 DKV6518A CKV2020-14 12 200 450 550 25 40 12 20 OKV6518B CKV2020-15 12 100 450 550 25 40 12 20 Symbol Q Package Figure Parameter of Merit Unit f=1MHz Test Conditions Vaz 1.25 Vde Vra=2Vde Type Number for 099 Type Number Min. Min. Package for Chip() DKV6510 CKV2020-01 500 ogo DKV6510A CKV2020-02 500 ogg DKV6510B CKV2020-03 750 099 DKV6515 CKV2020-04 200 099 DKV6515A CKV2020-05 200 099 DKV6515B CKV2020-06 500 099 DKV6516 CKV2020-07 200 099 OKV6516A CKV2020-08 200 099 OKV65168 CKV2020-08 500 os9 DKV6517 CKV2020-10 200 099 DKV6517A CKV2020-11 200 099 DKV6517B CKV2020-12 500 099 DKVe518(2) CKV2020-13 150 287 DKV6518A CKV2020-14 150 287 DKV6518B CKV2020-15 300 287 Notes: 1. Chip styles CKV2020-01 through 06 are 149-803 CKV2020-07 through 12 are 149-804. 2. DKV6518 seies are in 287-001 outline. 3-69