SMBTA92/ MMBTA92
Feb-18-20021
PNP Silicon High Voltage Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA42 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
SMBTA92/ MMBTA92 s2D 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 300 V
Collector-base voltage VCBO 300
Emitter-base voltage VEBO 5
DC collector current IC500 mA
Base current IB100
Total power dissipation, TS = 74 °C Ptot 360 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
210 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
SMBTA92/ MMBTA92
Feb-18-20022
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 300 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 300 - -
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EBO 5 - -
Collector cutoff current
VCB = 200 V, IE = 0
ICBO - - 250 nA
Collector cutoff current
VCB = 200 V, IE = 0 , TA = 150 °C
ICBO - - 20 µA
Emitter cutoff current
VEB = 5 V, IC = 0
IEBO - - 100 nA
DC current gain 1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
25
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VCEsat - - 0.5 V
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
VBEsat - - 0.9
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
fT50 - - MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
Ccb - - 6 pF
1) Pulse test: t < 300
s; D < 2%
SMBTA92/ MMBTA92
Feb-18-20023
Transition frequency fT = f (IC)
VCE = 20V, f = 100MHz
EHP00878SMBTA 92/93
10
10 10 mA 10
MHz
10
555
0123
10
3
2
10
1
5
T
f
Ι
C
5
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
40
80
120
160
200
240
280
320
mW
400
P
tot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00879SMBTA 92/93
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
Operating range IC = f (VCEO)
TA = 25°C, D = 0
EHP00880SMBTA 92/93
10
10 V
CEO
10
C
10
3
1
10
-1
5
10 10
10
0
5
Ι
V
mA
5
10
2
0123
555
10
100
1
100
500
DC
µ
µ
ms
ms
ms
s
s
SMBTA92/ MMBTA92
Feb-18-20024
Collector current IC = f (VBE)
VCE = 10V
EHP00882SMBTA 92/93
10
0V
BE
1.5
mA
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
5
10
2
Collector cutoff current ICBO = f (TA)
VCB = 200V
0
10
EHP00881SMBTA 92/93
A
T
150
-1
4
10
Ι
CB0
nA
50 100
0
10
1
10
3
10
C
10
2
max
typ
DC current gain hFE = f (IC)
VCE = 10V
EHP00883SMBTA 92/93
10
10 mA
h
C
10
5
FE
10
3
1
100
5
10 10 10
-1 0 1 2 3
Ι
5
102
555
2
