AP2111H-1.8TRG1 - BCD Semiconductor Manufacturing Limited

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

1

General Description

The AP2111 is CMOS process low dropout linear

regulator with enable function, the regulator delivers

a guaranteed 600mA (Min) continuous load current.

The AP2111 provides 1.2V, 1.8V, 2.5V, 3.3V, 4.8V

regulated output and 0.8V to 5V adjustable output,

and provides excellent output accuracy 1.5%, it is

also provides a excellent load regulation, line

regulation and excellent load transient performance

due to very fast loop response. The AP2111 has

built-in auto discharge function.

The AP2111 features low power consumption.

The AP2111 is available in SOIC-8, PSOP-8

SOT-223 and SOT-23-5 packages.

Features

• Output Voltage Accuracy: ±1.5%

• Output Current: 600mA (Min)

• Foldback Short Current Protection: 50mA

• Enable Function to Turn On/Off VOUT

• Low Dropout Voltage (3.3V):

250mV (Typ) @ IOUT=600mA

• Excellent Load Regulation: 0.2%/A (Typ)

• Excellent Line Regulation: 0.02%/V (Typ)

• Low Quiescent Current: 55μA (Typ)

• Low Standby Current: 0.01μA (Typ)

• Low Output Noise: 50μVRMS

• PSRR: 65dB @ f=1kHz, 65dB @ f=100Hz

• OTSD Protection

• Stable with 1.0μF Flexible Cap: Ceramic,

Tantalum and Aluminum Electrolytic

• Operating Temperature Range: -40°C to 85°C

• ESD: MM 400V, HBM 4000V

Applications

• Laptop computer

• Potable DVD

• LCD Monitor

Figure 1. Package Types of AP2111

SOIC-8 PSOP-8

SOT-223 SOT-23-5

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

2

Pin Configuration

1

2

34

5

Figure 2. Pin Configuration of AP2111 (Top View)

Pin Descriptions

Pin Number Pin Name Function

SOIC-8/PSOP-8 SOT-223 SOT-23-5

4 3 3 VIN Input voltage

2 2 4 VOUT Output voltage

8 1 EN Chip enable, H – normal work, L – shutdown output

1, 3, 5, 6, 7 1 2 GND Ground

5 ADJ/NC

Adjust output for ADJ version/No connected for

fixed version

M Package

(

SOIC-8

)

MP Package

(

PSOP-8

)

H Package

(

SO

T

-223

)

K Package

(

SO

T

-23-5

)

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

3

Functional Block Diagram

Figure 3. Functional Block Diagram of AP2111 for Fixed Version

UVLO &

Shutdown Logic

Thermal

Shutdown

VREF

GND

EN

VOUT

VIN

3m

1

2

3

4

Foldback

Current Limit

ADJ/NC

5

Figure 4. Functional Block Diagram of AP2111 for Adjustable Version

A (B)

A: SOIC-8/PSOP-8

B: SOT-223

SOT-23-5

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

4

Ordering Information

AP2111 -

Package Temperature

Range Part Number Marking ID Packing Type

SOIC-8 -40 to 85°C

AP2111M-1.2G1 2111M-1.2G1 Tube

AP2111M-1.2TRG1 2111M-1.2G1 Tape & Reel

AP2111M-1.8G1 2111M-1.8G1 Tube

AP2111M-1.8TRG1 2111M-1.8G1 Tape & Reel

AP2111M-2.5G1 2111M-2.5G1 Tube

AP2111M-2.5TRG1 2111M-2.5G1 Tape & Reel

AP2111M-3.3G1 2111M-3.3G1 Tube

AP2111M-3.3TRG1 2111M-3.3G1 Tape & Reel

PSOP-8 -40 to 85°C

AP2111MP-1.2G1 2111MP-1.2G1 Tube

AP2111MP-1.2TRG1 2111MP-1.2G1 Tape & Reel

AP2111MP-1.8G1 2111MP-1.8G1 Tube

AP2111MP-1.8TRG1 2111MP-1.8G1 Tape & Reel

AP2111MP-2.5G1 2111MP-2.5G1 Tube

AP2111MP-2.5TRG1 2111MP-2.5G1 Tape & Reel

AP2111MP-3.3G1 2111MP-3.3G1 Tube

AP2111MP-3.3TRG1 2111MP-3.3G1 Tape & Reel

SOT-223 -40 to 85°C

AP2111H-1.2TRG1 GH11B Tape & Reel

AP2111H-1.8TRG1 GH11G Tape & Reel

AP2111H-2.5TRG1 GH11H Tape & Reel

AP2111H-3.3TRG1 GH11C Tape & Reel

AP2111H-4.8TRG1 GH13D Tape & Reel

SOT-23-5 -40 to 85°C

AP2111K-ADJG1 G3Q Tube

AP2111K-ADJTRG1 G3Q Tape & Reel

BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant

and Green.

Package

M: SOIC-8

MP: PSOP-8

H: SOT-223

K: SOT-23-5

1.2: Fixed Output 1.2V

1.8: Fixed Output 1.8V

2.5: Fixed Output 2.5V

3.3: Fixed Output 3.3V

4.8: Fixed Output 4.8V

ADJ: Adjustable Output

Circuit Type G1: Green

Blank: Tube

TR: Ta

p

e & Reel

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

5

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Power Supply Voltage VIN 6.5 V

Operating Junction Temperature

Range TJ 150 ºC

Storage Temperature Range TSTG -65 to 150 ºC

Lead Temperature (Soldering, 10sec) TLEAD 260 ºC

Thermal Resistance (No Heatsink) θJA

SOIC-8 144

ºC/W

PSOP-8 143

SOT-223 128

SOT-23-5 250

ESD (Machine Model) 400 V

ESD (Human Body Model) 4000 V

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to

the device. These are stress ratings only, and functional operation of the device at these or any other conditions

beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute

Maximum Ratings” for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply Voltage VIN 2.5 6.0 V

Operating Ambient Temperature

Range TA -40 85 °C

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

6

Electrical Characteristics

AP2111-1.2 Electrical Characteristic (Note 2)

VIN=2.5V, CIN=1.0μF (Ceramic), COUT=1.0μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C

ranges, unless otherwise specified (Note 3).

Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input

voltage must be applied before a current source load is applied.

Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage VOUT V

IN =2.5V, 1mA ≤ IOUT ≤ 30mA VOUT

×98.5% 1.2 VOUT

×101.5% V

Maximum Output

Current IOUT(Max) V

IN=2.5V, VOUT=1.182V to 1.218V 600 mA

Load Regulation (V△OUT/VOUT)

△IOUT VIN=2.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A

Line Regulation (V△OUT/VOUT)

△VIN 2.5V≤VIN≤6V, IOUT=30mA 0.02

%/V

Dropout Voltage VDROP

IOUT =10mA 1000 1300

mV IOUT =300mA 1000 1300

IOUT=600mA 1000 1300

Quiescent Current IQ V

IN=2.5V, IOUT=0mA 55 80

μA

Standby Current ISTD V

IN=2.5V, VEN in OFF mode 0.01 1.0 μA

Power Supply

Rejection Ratio PSRR

Ripple 0.5Vp-p

VIN=2.5V,

IOUT=100mA

f=100Hz 65

dB

f=1kHz 65

Output Voltage

Temperature Coefficient

(V△OUT/VOUT)

T△

IOUT=30mA

TA=-40°C to 85°C ±100 ppm/°C

Short Current Limit ISHORT V

OUT=0V 50 mA

RMS Output Noise VNOISE

N

o Load, 10Hz ≤ f ≤100kHz 50

μVRMS

VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0

V

VEN Low Voltage VIL Enable logic low, regulator off 0 0.4

Start-up Time tS

N

o Loa

d

20

μs

EN Pull Down Resistor RPD 3.0 mΩ

VOUT Discharge

Resistor RDCHG Set EN pin at Low 60 Ω

Thermal Shutdown

Temperature TOTSD 160

°C

Thermal Shutdown

Hysteresis THYOTSD 30

Thermal Resistance

(Junction to Case) θJC

SOIC-8 74.6

°C /W

PSOP-8 43.7

SOT-223 50.9

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

7

Electrical Characteristics (Continued)

AP2111-1.8 Electrical Characteristic (Note 2)

VIN=2.8V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,

unless otherwise specified (Note 3).

Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input

voltage must be applied before a current source load is applied.

Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage VOUT V

IN =2.8V, 1mA ≤ IOUT ≤ 30mA VOUT

×98.5% 1.8 VOUT

×101.5% V

Maximum Output Current IOUT(Max) VIN=2.8V,

VOUT=1.773V to 1.827V 600 mA

Load Regulation (V△OUT/VOUT)

△IOUT

VOUT=1.8V, VIN=VOUT+1V,

1mA ≤ IOUT ≤600mA 0.2 %/A

Line Regulation

(V△OUT/VOUT)

△VIN 2.8V≤VIN≤6V, IOUT=30mA 0.02 %/V

Dropout Voltage VDROP

IOUT =10mA 500 700

mV IOUT =300mA 500 700

IOUT=600mA 500 700

Quiescent Current IQ V

IN=2.8V, IOUT=0mA 55 80

μA

Standby Current ISTD V

IN=2.8V, VEN in OFF mode 0.01 1.0 μA

Power Supply Rejectio

n

Ratio PSRR

Ripple 0.5Vp-p

VIN=2.8V,

IOUT=100mA

f=100Hz 65

dB

f=1kHz 65

Output Voltage

Temperature Coefficient

(V△OUT/VOUT)

T△

IOUT=30mA

TA=-40°C to 85°C ±100 ppm/°C

Short Current Limit ISHORT V

OUT=0V 50 mA

RMS Output Noise VNOISE

N

o Load, 10Hz ≤ f ≤100kHz 50

μVRMS

VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0

V

VEN Low Voltage VIL Enable logic low, regulator off 0 0.4

Start-up Time tS

N

o Loa

d

20

μs

EN Pull Down Resistor RPD 3.0 mΩ

VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω

Thermal Shutdown

Temperature TOTSD 160

°C

Thermal Shutdown

Hysteresis THYOTSD 30

Thermal Resistance

(Junction to Case) 　θJC

SOIC-8 74.6

°C /W

PSOP-8 43.7

SOT-223 50.9

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

8

Electrical Characteristics (Continued)

AP2111-2.5 Electrical Characteristic (Note 2)

VIN=3.5V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,

unless otherwise specified (Note 3).

Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage

must be applied before a current source load is applied.

Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage VOUT V

IN =3.5V, 1mA ≤ IOUT ≤ 30mA VOUT

×98.5% 2.5 VOUT

×101.5% V

Maximum Output Current IOUT(Max) VIN=3.5V, VOUT=2.463V to

2.537V 600 mA

Load Regulation (V△OUT/VOUT)

△IOUT

VOUT=2.5V, VIN=VOUT+1V,

1mA ≤ IOUT ≤600mA 0.2 %/A

Line Regulation (V△OUT/VOUT)

△VIN 3.5V≤VIN≤6V, IOUT=30mA 0.02 %/V

Dropout Voltage VDROP

IOUT =10mA 5 8

mV IOUT =300mA 125 200

IOUT=600mA 250 400

Quiescent Current IQ V

IN=3.5V, IOUT=0mA 55 80

μA

Standby Current ISTD V

IN=3.5V, VEN in OFF mode 0.01 1.0 μA

Power Supply Rejectio

n

Ratio PSRR

Ripple 0.5Vp-p

VIN=3.5V,

IOUT=100mA

f=100Hz 65

dB

f=1kHz 65

Output Voltage

Temperature Coefficient

(V△OUT/VOUT)

T△

IOUT=30mA

TA=-40°C to 85°C ±100 ppm/°C

Short Current Limit ISHORT V

OUT=0V 50 mA

RMS Output Noise VNOISE

N

o Load, 10Hz ≤ f ≤100kHz 50

μVRMS

VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0

V

VEN Low Voltage VIL Enable logic low, regulator off 0 0.4

Start-up Time tS

N

o Loa

d

20

μs

EN Pull Down Resistor RPD 3.0 mΩ

VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω

Thermal Shutdown

Temperature TOTSD 160

°C

Thermal Shutdown

Hysteresis THYOTSD 30

Thermal Resistance

(Junction to Case) 　θJC

SOIC-8 74.6

°C /WPSOP-8 43.7

SOT-223 50.9

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

9

Electrical Characteristics (Continued)

AP2111-3.3 Electrical Characteristic (Note 2)

VIN=4.3V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,

unless otherwise specified (Note 3).

Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage

must be applied before a current source load is applied.

Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage VOUT V

IN =4.3V, 1mA ≤ IOUT ≤ 30mA VOUT

×98.5% 3.3 VOUT

×101.5% V

Maximum Output Current IOUT(Max) VIN=4.3V, VOUT=3.251V to

3.350V 600 mA

Load Regulation (V△OUT/VOUT)

△IOUT VIN=4.3V, 1mA ≤ IOUT ≤600mA 0.2 %/A

Line Regulation (V△OUT/VOUT)

△VIN 4.3V≤VIN≤6V, IOUT=30mA 0.02 %/V

Dropout Voltage VDROP

IOUT =10mA 5 8

mV IOUT =300mA 125 200

IOUT=600mA 250 400

Quiescent Current IQ V

IN=4.3V, IOUT=0mA 55 80

μA

Standby Current ISTD V

IN=4.3V, VEN in OFF mode 0.01 1.0 μA

Power Supply Rejectio

n

Ratio PSRR

Ripple 0.5Vp-p

VIN=4.3V,

IOUT=100mA

f=100Hz 65

dB

f=1kHz 65

Output Voltage

Temperature Coefficient

(V△OUT/VOUT)

T△

IOUT=30mA

TA=-40°C to 85°C ±100 ppm/°C

Short Current Limit ISHORT V

OUT=0V 50 mA

RMS Output Noise VNOISE

N

o Load, 10Hz ≤ f ≤100kHz 50

μVRMS

VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0

V

VEN Low Voltage VIL Enable logic low, regulator off 0 0.4

Start-up Time tS

N

o Loa

d

20

μs

EN Pull Down Resistor RPD 3.0 mΩ

VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω

Thermal Shutdown

Temperature TOTSD 160

°C

Thermal Shutdown

Hysteresis THYOTSD 30

Thermal Resistance

(Junction to Case) 　θJC

SOIC-8 74.6

°C /W

PSOP-8 43.7

SOT-223 50.9

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

10

Electrical Characteristics (Continued)

AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223)

VIN=5.5V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,

unless otherwise specified (Note 3).

Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage

must be applied before a current source load is applied.

Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage VOUT V

IN =5.5V, 1mA ≤ IOUT ≤ 30mA VOUT

×98.5% 4.8 VOUT

×101.5% V

Maximum Output Current IOUT(Max) VIN=5.5V, VOUT=4.751V to

4.850V 600 mA

Load Regulation (V△OUT/VOUT)

△IOUT VIN=5.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A

Line Regulation (V△OUT/VOUT)

△VIN 5.5V≤VIN≤6V, IOUT=30mA 0.02 %/V

Dropout Voltage VDROP

IOUT =10mA 5 8

mV IOUT =300mA 100 200

IOUT=600mA 200 400

Quiescent Current IQ V

IN=5.5V, IOUT=0mA 55 80

μA

Standby Current ISTD V

IN=5.5V, VEN in OFF mode 0.01 1.0 μA

Power Supply Rejectio

n

Ratio PSRR

Ripple 0.5Vp-p

VIN=5.5V,

IOUT=100mA

f=100Hz 65

dB

f=1kHz 65

Output Voltage

Temperature Coefficient

(V△OUT/VOUT)

T△

IOUT=30mA

TA=-40°C to 85°C ±100 ppm/°C

Short Current Limit ISHORT V

OUT=0V 50 mA

RMS Output Noise VNOISE

N

o Load, 10Hz ≤ f ≤100kHz 50

μVRMS

Thermal Shutdown

Temperature TOTSD 160

°C

Thermal Shutdown

Hysteresis THYOTSD 30

Thermal Resistance

(Junction to Case) 　θJC SOT-223 50.9

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

11

Electrical Characteristics (Continued)

AP2111-ADJ Electrical Characteristic (Note 2) (Only for SOT-23-5)

VIN=2.5V, CIN=1.0μF (Ceramic), COUT=1.0μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C

ranges, unless otherwise specified (Note 3).

Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input

voltage must be applied before a current source load is applied.

Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

Parameter Symbol Conditions Min Typ Max Unit

Reference Voltage VREF V

IN =2.5V, 1mA ≤ IOUT ≤ 30mA VREF

×98.5% 0.8 VREF

×101.5% V

Maximum Output

Current IOUT(Max) V

IN=2.5V, VREF=0.788V to 0.812V 600 mA

Load Regulation (V△OUT/VOUT)

△IOUT VIN=2.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A

Line Regulation (V△OUT/VOUT)

△VIN 2.5V≤VIN≤6V, IOUT=30mA 0.02

%/V

Quiescent Current IQ V

IN=2.5V, IOUT=0mA 55 80

μA

Standby Current ISTD V

IN=2.5V, VEN in OFF mode 0.01 1.0 μA

Power Supply

Rejection Ratio PSRR

Ripple 0.5Vp-p

VIN=2.5V,

IOUT=100mA

f=100Hz 65

dB

f=1kHz 65

Output Voltage

Temperature Coefficient

(V△OUT/VOUT)

T△

IOUT=30mA

TA=-40°C to 85°C ±100 ppm/°C

Short Current Limit ISHORT V

OUT=0V 50 mA

RMS Output Noise VNOISE

N

o Load, 10Hz ≤ f ≤100kHz 50

μVRMS

VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0

V

VEN Low Voltage VIL Enable logic low, regulator off 0 0.4

Start-up Time tS

N

o Loa

d

20

μs

EN Pull Down Resistor RPD 3.0 mΩ

VOUT Discharge

Resistor RDCHG Set EN pin at Low 60 Ω

Thermal Shutdown

Temperature TOTSD 160

°C

Thermal Shutdown

Hysteresis THYOTSD 30

Thermal Resistance

(Junction to Case) θJC SOT-23-5 150 °C /W

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

12

Typical Performance Characteristics

Figure 5. Output Voltage vs. Input Voltage Figure 6. Output Voltage vs. Input Voltage

Figure 7. Output Voltage vs. Input Voltage Figure 8. Quiescent Current vs. Temperature

0.00.51.01.52.02.53.03.54.04.55.05.56.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

No Load

TA=-40oC

TA=25oC

TA=85oC

VOUT=1.2V

Output Voltage (V)

Input Voltage (V)

0.00.51.01.52.02.53.03.54.04.55.05.56.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Output Voltage (V )

Input Voltage (V)

TA=-40oC

TA=25oC

TA=85oC

VOUT=3.3V

No Load

-40-200 20406080

46

48

50

52

54

56

58

60

62

64

66

68

70

VIN=2.5V

No Load

Quiescent Current (μA)

Temperature (oC)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VOUT=4.8V

TA=25OC

Output Voltage (V)

Input Voltage (V)

IOUT=0mA

IOUT=100mA

IOUT=300mA

IOUT=600mA

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

13

Typical Performance Characteristics (Continued)

1.01.52.02.53.03.54.04.55.05.56.0

0

10

20

30

40

50

60

70

Quiescent Current (μA)

TA=-40oC

TA=25oC

TA=85oC

No Load

Input Voltage (V)

-40-200 20406080

3.25

3.26

3.27

3.28

3.29

3.30

3.31

3.32

3.33

3.34

3.35

Output Voltage (V)

Temperature (oC)

IOUT=10mA

IOUT=100mA

IOUT=300mA

IOUT=600mA

VIN=4.3V

CIN=1μF

COUT=1μF

-40 -20 0 20 40 60 80

1.200

1.202

1.204

1.206

1.208

1.210

IOUT=300mA

IOUT=600mA

IOUT=10mA

IOUT=100mA

VIN=2.5V

CIN=1μF

COUT=1μF

Output Voltage (V)

Temperature (oC)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

VIN=2.5V

Output Voltage (V)

Output Current (A)

TA= -40oC

TA=25oC

TA=85oC

Figure 11. Output Voltage vs. Temperature Figure 12. Output Voltage vs. Output Current

Figure 9. Quiescent Current vs. Input Voltage Figure 10. Output Voltage vs. Temperature

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

14

Typical Performance Characteristics (Continued)

0.00.10.20.30.40.50.60.70.80.91.0

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Output Voltage (V)

Output Current (A)

TA=-40oC

TA= 25oC

TA= 85oC

VIN=4.3V

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Output Voltage (V)

Output Current (A)

VIN=4.0V

VIN=4.3V

VIN=5.0V

VIN=5.5V

VIN=6.0V

TA=25oC

CIN=1μF

COUT=1μF

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TA=25oC

CIN=1μF

COUT=1μF

VIN=5.0V

VIN=2.0V

VIN=5.5V

VIN=6.0V

VIN=2.5V

Output Volt age (V)

Output Current (A)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VOUT=4.8V

Output Voltage (V)

Output Current (A)

VIN=5.0V

VIN=5.3V

VIN=5.5V

VIN=6.0V

Figure 15. Output Voltage vs. Output Current Figure 16. Output Voltage vs. Output Current

Figure 13. Output Voltage vs. Output Current Figure 14. Output Voltage vs. Output Current

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

15

Typical Performance Characteristics (Continued)

0.0 0.1 0.2 0.3 0.4 0.5 0.6

0

50

100

150

200

250

300

350

Dropout Voltage (mV)

Output Current (A)

VOUT=3.3V

TA=-40oC

TA= 25oC

TA= 85oC

0.0 0.1 0.2 0.3 0.4 0.5 0.6

40

60

80

100

120

140

160

180

200

220

240

260

Ground Current (μA)

Output Cur ren t (A)

VIN=4.3V

TA=-40oC

TA= 25oC

TA= 85oC

100 1k 10k 100k

30

35

40

45

50

55

60

65

70

VOUT=1.2V

IOUT=10mA

IOUT=100mA

IOUT=300mA

PSRR (dB)

Frequency (Hz)

20

VIN=2.5V

Ripple=0.5V

0.0 0.1 0.2 0.3 0.4 0.5 0.6

0

50

100

150

200

250

300

350

Dropout Voltage (V)

Output Current (A)

TA=-40OC

TA=25OC

TA=85OC

VOUT=4.8V

Figure 17. Dropout Voltage vs. Output Current Figure 18. Dropout Voltage vs. Output Current

Figure 19. Ground Current vs. Output Current Figure 20. PSRR vs. Frequency

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

16

Typical Performance Characteristics (Continued)

Figure 21. Load Transient Figure 22. Enabl e On

Figure 23. Enable Off

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

17

Typical Application (Note 4)

Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0μF ceramic capacitor is selected as

input/output capacitors.

Figure 24. Ty pical Application of AP211 1

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

18

Mechanical Dimensions

SOIC-8 Unit: mm(inch)

0°

8°

1°

5°

R0.150(0.006)

1.000(0.039)

0.330(0.013)

0.510(0.020)

1.350(0.053)

1.750(0.069)

0.100(0.004)

0.300(0.012)

0.900(0.035)

0.800(0.031)

0.200(0.008)

3.800(0.150)

4.000(0.157)

7°

20:1

D

1.270(0.050)

TYP

0.190(0.007)

0.250(0.010)

8°

D

5.800(0.228)

6.200(0.244)

0.675(0.027)

0.725(0.029)

0.320(0.013)

8°

0.450(0.017)

0.800(0.031)

4.700(0.185)

5.100(0.201)

Note: Eject hole, oriented hole and mold mark is optional.

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

19

Mechanical Dimensions (Continued)

PSOP-8 Unit: mm(inch)

3.202(0.126)

3.402(0.134)

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

20

Mechanical Dimensions (Continued)

SOT-223 Unit: mm(inch)

3.300(0.130)

3.700(0.146)

6.700(0.264)

7.300(0.287)

Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

21

Mechanical Dimensions (Continued)

SOT-23-5 Unit: mm(inch)

2.820(0.111)

0.000(0.000)

0.300(0.012)

0.950(0.037)

0.900(0.035)

0.100(0.004)

0.200(0.008)

8°

0°

3.020(0.119)

0.400(0.016)

0.150(0.006)

1.300(0.051)

0.200(0.008)

1.800(0.071)

2.000(0.079)

0.700(0.028)

REF

TYP

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any

particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Limited

800, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing Limited

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office

Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corporation

30920 Huntwood Ave. Hayward,

CA 94544, U.S.A

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- IC Design Group

Advanced Analog Circuits (Shanghai) Corporation

8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corp.

30920 Huntwood Ave. Hayward,

CA 94544, USA

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- Headquarters

BCD Semiconductor Manufacturing Limited

No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China

Tel: +86-21-24162266, Fax: +86-21-24162277