Size Document Number Custom<Doc> Key Parameters (TC = 25C unless otherwise specified) Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value -4 +19 VGS op Gate-Source Voltage, Recommended Op. Value -4 +15 Static 450 VGS = 15 V, TC = 25 C, TVJ 175 C Fig. 20 ISD DC Source-Drain Current Max. Note 450 225 ISD (pulsed) Maximum Pulsed Source-Drain Current 900 -40 AC frequency 1Hz. Note 1 VGS = 15 V, TC = 90 C, TVJ 175 C Note 2 900 Note 1 Note 2 V 409 DC Source-Drain Current (Body Diode) Maximum Virtual Junction Temperature under Switching Conditions Test Conditions 1200 IDS (pulsed) Maximum Pulsed Drain-Source Current TVJ op Unit 2 VDS max DC Continuous Drain Current Typ. Sheet 3 Parameter IDS Min. 4 Symbol ISD BD 1 Thursday, April 11, 2019 Date: 5 175 A VGS = 15 V, TC = 25 C, TVJ 175 C VGS = - 4 V, TC = 25 C, TVJ 175 C tPmax limited by Tjmax VGS = 15 V, TC = 25 C C If MOSFET body diode is not used, VGS max = -8/+19 V Assumes RTH JC = 0.11C/W and RDS(on) = 4.6 m. Calculate PD = (TVJ - TC) / RTH JC. Calculate ID_MAX = (PD / RDS(on)) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. MOSFET Characteristics (Per Position) (TC = 25C unless otherwise specified) Symbol Parameter Min. V(BR)DSS Drain-Source Breakdown Voltage 1200 VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS RDS(on) 1.8 Typ. 2.5 200 Gate-Source Leakage Current 0.05 1.3 Drain-Source On-State Resistance (Devices Only) 2.6 3.7 4.6 355 EOn Turn-On Switching Energy, TJ = 25 C TJ = 125 C TJ = 175 C 11.0 11.7 13.0 Turn-Off Switching Energy, TJ = 25 C TJ = 125 C TJ = 175 C 10.1 11.3 12.1 Internal Gate Resistance 2.5 Ciss Input Capacitance 38.0 Coss Output Capacitance 1.5 Crss Reverse Transfer Capacitance 90 QGS Gate to Source Charge 355 QGD Gate to Drain Charge 500 QG Total Gate Charge 1330 FET Thermal Resistance, Junction to Case 0.11 Rth JC V Test Conditions Note VGS = 0 V, ID = 200 A VDS = VGS, ID = 132 mA VDS = VGS, ID = 132 mA, TJ = 175 C 5 Transconductance RG(int) 3.6 Unit 2.0 gfs EOff Max. A m S 360 mJ nF pF nC 0.13 VGS = 0 V, VDS = 1200 V VGS = 15 V, VDS = 0 V VGS = 15 V, ID = 450 A VGS = 15 V, ID = 450 A, TJ = 175 C VDS= 20 V, IDS= 450 A VDS= 20 V, IDS= 450 A, TJ = 175 C VDS = 600 V, ID = 450A, VGS = -4 V/15 V, RG(ext) = 0.0 , L= 13.6 H VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 2 Fig. 3 Fig. 4 Fig. 11 Fig. 13 Fig. 9 VDS = 800 V, VGS = -4 V/15 V ID = 450 A Per IEC60747-8-4 pg 21 C/W Fig. 17 Body Diode Characteristics (Per Position) (TC = 25C unless otherwise specified) Symbol Parameter 2 Min. Typ. 4.7 Max. Unit VSD Body Diode Forward Voltage trr Reverse Recovery Time 52 ns Qrr Reverse Recovery Charge 6.6 Irr Peak Reverse Recovery Current 195 C Err Reverse Recovery Energy TJ = 25 C TJ = 125 C TJ = 175 C 0.2 1.1 1.9 4.2 V A mJ Test Conditions VGS = -4 V, ISD = 450 A VGS = -4 V, ISD = 450 A, TJ = 175 C Note Fig. 7 VGS = -4 V, ISD = 450 A, VR = 600 V di/dt = 8 A/ns, TJ = 175 C VDS = 600 V, ID = 450A, VGS = -4 V/15 V, RG(ext) = 0.0 , L= 13.6 H Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. Fig. 14 Temperature Sensor (NTC) Characteristics Symbol Parameter R25 R/R P25 Min. Typ. Rated Resistance Max. 4.7 Unit k Tolerance of R25 1 % Maximum Power Dissipation 50 mW Test Conditions TNTC = 25 C Steinhart-Hart Modified Coefficients for R/T Computation: A B C D TNTC < 25 C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07 TNTC 25 C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07 Module Physical Characteristics Symbol Parameter Min. R3-1 Package Resistance, M1 0.72 R1-2 Package Resistance, M2 0.63 LStray Stray Inductance 6.7 TC Case Temperature W Weight MS Mounting Torque Visol Case Isolation Voltage 4.0 CTI Comparative Tracking Index 600 Clearance Distance -40 Note13 Note24 Unit m nH 125 Test Conditions TC = 125 C, Note13 TC = 125 C, Note 3 Between Terminals 2 and 3 C g 2.0 3.0 4.0 2.0 4.0 5.0 N-m kV Baseplate, M4 bolts Power Terminals, M5 bolts AC, 50 Hz, 1 min 12.5 From 2 to 3, Note24 11.5 From 1 to Baseplate, Note 4 5.7 From 2 to 5, Note 4 14.7 Creepage Distance Max. 175 13.7 3 Typ. mm From 5 to Baseplate, Note 4 From 2 to 3, Note 4 14.0 From 1 to Baseplate, Note 4 14.7 From 2 to 5, Note 4 14.3 From 5 to Baseplate, Note 4 Total Effective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance. Numbers reference the connections from the Schematic and Package Dimensions sections of this document. Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. Typical Performance 900 2.0 Drain-Source Current, IDS (A) 800 700 600 Normalized On-resistance (p.u.) Conditions: tp < 300 s VGS = 15 V 25 C -40 C 500 400 100 C 125 C 150 C 175 C 300 200 100 0 0.0 1.0 2.0 3.0 4.0 5.0 1.8 150 C 1.2 0.8 700 600 0 100 200 300 400 500 600 700 800 900 Conditions: tp < 300 s VDS = 20 V 175 C 150 C 125 C 100 C 400 1.0 0.8 300 0.6 200 0.4 0.2 25 C 0 C -25 C -40 C 100 -50 0 50 100 150 0 200 Virtual Junction Temperature, TVJ (C) Source-Drain Current, ISD (A) 800 700 900 Conditions: tp < 300 s VGS = 15 V 800 700 600 4.0 Conditions: tp < 300 s VGS = 0.0 V 500 25 C -40 C 400 6.0 8.0 400 300 25 C 0 C -25 C -40 C 300 100 C 125 C 150 C 175 C 200 100 0.0 1.0 2.0 10.0 175 C 150 C 125 C 100 C 600 500 0 2.0 Figure 4. Transfer Characteristic for Various Junction Temperatures Source-Drain Current, ISD (A) 900 0.0 Gate-Source Voltage, VGS (V) Figure 3. Normalized On-State Resistance vs. Juction Temperature 200 100 3.0 4.0 5.0 6.0 Source-Drain Voltage, VSD (V) Figure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 15 V 4 25 C 500 1.2 0.0 -40 C 1.0 Drain-Source Current, IDS (A) Normalized On-resistance (p.u.) 1.4 100 C Figure 2. Normalized On-State Resistance vs. Drain Current for Various Juction Temperatures Conditions: tp < 300 s VGS = 15 V ID = 450 A 1.6 125 C 1.4 Drain-Source Current, IDS (A) Figure 1. Output Characteristics for Various Junction Temperatures 1.8 175 C 1.6 Drain-Source Voltage, VDS (V) 2.0 Conditions: tp < 300 s VGS = 15 V 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Source-Drain Voltage, VSD (V) Figure 6. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 0 V (Body Diode) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. Typical Performance 900 1,000.00 Conditions: tp < 300 s VGS = - 4.0 V 700 600 175 C 150 C 125 C 100 C 500 400 300 200 0.0 1.0 2.0 3.0 4.0 5.0 0.10 6.0 0.01 7.0 1,000.00 Coss 400 600 2.5 2.0 1.5 1.0 0.5 800 1,000 1,200 -50 0 100 150 200 Figure 10. Threshold Voltage vs. Junction Temperature 60 80 Conditions: TVJ = 25 C VDS = 600 V RG(ext) = 0.0 VGS = -4/+15 V L = 13.6 H 40 EOn + EOff 30 EOff EOn 20 10 ERR 0 200 400 600 800 Drain-Source Current, IDS (A) Figure 11. Switching Energy vs. Drain Current (VDS = 600 V) Conditions: TVJ = 25 C VDS = 800 V RG(ext) = 0.0 VGS = -4/+15 V L = 13.6 H 70 Switching Energy (mJ) 50 Switching Energy (mJ) 50 Junction Temperature, TJ (C) Figure 9. Typical Capacitances vs. Drain to Source Voltage (0 - 1200V) 5 200 Conditions: VGS = VDS IDS = 132 mA Drain-Source Voltage, VDS (V) 0 150 3.0 0.0 200 100 3.5 Crss 0 50 4.0 Thresold Voltage, Vth (V) Capacitance (nF) Ciss 10.00 0.01 0 Figure 8. Typical Capacitances vs. Drain to Source Voltage (0 - 200V) TJ = 25 C VAC = 25 mV f = 100 kHz 0.10 Crss Drain-Source Voltage, VDS (V) Figure 7. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = - 4 V (Body Diode) 1.00 Coss 1.00 Source-Drain Voltage, VSD (V) 100.00 Ciss 10.00 25 C 0 C -25 C -40 C 100 0 TJ = 25 C VAC = 25 mV f = 100 kHz 100.00 Capacitance (nF) Source-Drain Current, ISD (A) 800 1000 60 50 EOn + EOff 40 EOff 30 EOn 20 10 0 ERR 0 200 400 600 800 Drain-Source Current, IDS (A) Figure 12. Switching Energy vs. Drain Current (VDS = 800 V) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. 1000 Typical Performance 25 Switching Energy (mJ) 2.5 Conditions: IDS = 450 A, VDD =600 V RG(ext) = 0.0 , VGS = -4/+15 V L = 13.6 H 20 15 EOn EOff 10 5 0 0 50 Conditions: IDS = 450 A, RG(ext) = 0.0 , VGS = -4/+15 V L = 13.6 H EOn + EOff Reverse Recovery Energy, ERR (mJ) 30 100 150 200 2.0 1.5 ERR (VDD = 600 V) 1.0 0.5 0.0 0 Conditions: IDS = 450 A, VDD = 600 V TVJ = 25C, VGS = -4/+15 V L = 13.6 H Reverse Recovery Energy, ERR (mJ) Switching Energy (mJ) EOn + EOff 0.20 0.15 50 EOn 40 0.10 EOff 30 20 0.05 10 ERR 0 2 4 6 8 10 External Gate Resistor, RG(ext) () 6 Figure 14. Reverse Recovery Energy vs. Junction Temperature 60 0 200 0.25 Conditions: IDS = 450 A, VDD =600 V TJV = 25 C, VGS = -4/+15 V L = 13.6 H 70 150 Junction Temperature, TVJ (C) Figure 13. MOSFET Switching Energy vs. Junction Temperature 80 100 50 Junction Temperature, TVJ (C) 90 ERR (VDD = 800 V) 12 0.00 0 2 4 6 8 10 External Gate Resistor, RG(ext) () Figure 15. MOSFET Switching Energy vs. External Gate Resistance Figure 16. Reserve Recovery Energy vs. External Gate Resistance Figure 17. MOSFET Juction to Case Transient Thermal Impedance, Zth JC (C/W) Figure 18. Forward Bias Safe Operating Area (FBSOA) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. 12 Typical Performance 1000 Drain-Source Current, IDS (A) 900 800 Chip Module 700 600 500 Conditions: TVJ = 175 C RG(ext) = 0.0 LStray-system = 6.0 nH LStray-module = 6.7 nH 400 300 200 100 0 0 200 400 600 800 1000 Drain-Source Voltage, VDS (V) 1200 Figure 20. Continuous Drain Current Derating vs. Case Temperature Figure 19. Reverse Bias Safe Operating Area (RBSOA) 600 VDS = 800 V TC = 90 C TVJ = 175 C RG(ext) = 0.0 MF = 1 Output Current, IOut (Arms) 500 400 300 200 100 0 0 20 40 60 80 Switching Frequency, FS (kHz) Figure 21. Maximum Power Dissipation Derating vs. Case Temperature 7 Figure 22. Typical Ouput Current Capablity vs. Switching Frequency (Inverter Application) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. 5 6 4 3 5 2 4 3 Schematic and Pin Out D 53.00 2 44.75 0.20 1 D 15.75 0.30 0.20 4.50 0.20 1 12.50 0.30 D 3 31.00 0.40 5.50 0.40 8 4 4 9 5 5 C C 1.50 0.20 24.00 0.20 1 2 10 31.00 0.40 71.75 0.20 24.00 0.20 12.50 0.20 8,9 13.50 0.30 80.00 0.20 13.50 0.30 3 6 NTC 6 10 7 11 C 7 1 11 2 B 29.50 0.20 B Package Dimmension (mm) 6 44.00 0.30 5 4 2.54 3 2 3.00 0.20 D 53.00 0.20 15.75 0.30 44.75 0.20 12.50 0.30 Title A <Title> 13.50 0.30 12.00 0.30 4.50 0.20 0.64 2.54 B A 0.64 mm SIZE C 5 71.75 0.20 6 X 0.5 80.00 0.20 UNLESS OTHERWISE SPECIFIED 3 2 CREE CONFIDENTIAL This plot and the information contained within are the proprietary and confidential information of Cree, Inc. This plot may not be copied, reproduced, or disclosed to any unauthorized person without the written consent of Cree, Inc. .XX 0.25 TOLERANCE .XXX 0.125 VED 4 THIRD ANGLE PROJECTION NOT TO SCALE 4 31.00 0.40 DIMENSIONS PART # 13.50 0.30 SHEET 1 OF 2 APM-011-000 3 C A of 1 DATASHEET 1 DRAWING REV 1 Wolfspeed, A Cree Company Cree Fayetteville 535 W. Research Center Blvd. Fayetteville, AR 72701 2 4 5 1 31.00 0.40 2/7/2019 1 5.50 0.40 BMC Sheet 1.50 0.20 5 6 7 29.50 0.20 44.00 0.30 2.54 0.64 12.00 0.30 2.54 B 3.00 0.20 BY Wednesday, May 15, 2019 24.00 0.20 Date: Rev <RevCode> 24.00 0.20 12.50 0.20 Size Document Number Custom<Doc> 0.64 A DATASHEET DRAWING 8 Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 CREE CONFIDENTIAL SIZE DRAWN BY BMC 2/7/2019 DIMENSIONS mm Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subjectC to change without notice. the Cree logo, Wolfspeed(R), logo This plot andCree(R), the information contained withinand arethe theWolfspeed proprietary and are registered trademarks of Cree, Inc. .XX 0.25 confidential information of Cree, Inc. This plot may not be copied, CHECK TOLERANCE .XXX 0.125 reproduced, or disclosed to any unauthorized person without the written UNLESS OTHERWISE SPECIFIED THIRD ANGLE PROJECTION consent of Cree, Inc. APPROVED NOT TO SCALE X 0.5 PART # APM-011-000 Package Dimmension (mm) 2 1 E E Power Terminal Screw Maximum Penetration Depth 5.50 B F Maximum Penetration Depth [mm] DETAIL F SECTION E-E B SCALE 4 : 1 Supporting Links & Tools UNLESS OTHERWISE SPECIFIED: NAME DATE *A CGD12HBXMP: XM3 Evaluation Gate Driver TITLE: * CGD12HB00D: Differential Transceiver Board for CGD12HBXMP * CRD300DA12E-XM3: 300 kW Inverter Kit for Conduction-Optimized XM3 (CPWR-AN30) * KIT-CRD-CIL12N-XM3: Dynamic Performance Evaluation Board for the XM3 Module (CPWR-AN31) SIZE DWG. NO. REV * CPWR-AN28: Module Mounting Application Note A * CPWR-AN29: Thermal Interface Material Application Note SHEET 1 OF 1 SCALE: 1:1 WEIGHT: DIMENSIONS ARE IN INCHES TOLERANCES: FRACTIONAL ANGULAR: MACH BEND TWO PLACE DECIMAL THREE PLACE DECIMAL INTERPRET GEOMETRIC TOLERANCING PER: PROPRIETARY AND CONFIDENTIAL THE INFORMATION CONTAINED IN THIS DRAWING IS THE SOLE PROPERTY OF <INSERT COMPANY NAME HERE>. ANY REPRODUCTION IN PART OR AS A WHOLE WITHOUT THE WRITTEN PERMISSION OF <INSERT COMPANY NAME HERE> IS PROHIBITED. MATERIAL USED ON NEXT ASSY APPLICATION 2 DRAWN CHECKED A ENG APPR. MFG APPR. Q.A. COMMENTS: FINISH DO NOT SCALE DRAWING 1 Notes * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. * The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special precautions are required to realize optimal performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot. 9 Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc.

CAB450M12XM3 1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module Technical Features 5 VDS 1200 V IDS 450 A 4 3 2 Package 80 x 53 x 19 mm D * * * * High Power Density Footprint High Junction Temperature (175 C) Operation Low Inductance (6.7 nH) Design Implements Conduction Optimized Third Generation SiC MOSFET Technology * Silicon Nitride Insulator and Copper Baseplate V+ V+ G1 K1 C Mid Applications * * * * NTC2 Motor & Traction Drives Vehicle Fast Chargers Uninterruptable Power Supplies Smart-Grid / Grid-Tied Distributed Generation G2 NTC K2 NTC1 VB System Benefits * Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design. * Isolated integrated temperature sensing enables high-level temperature protection. * Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrentTitle protection. A Size Document Number Custom<Doc> Key Parameters (TC = 25C unless otherwise specified) Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value -4 +19 VGS op Gate-Source Voltage, Recommended Op. Value -4 +15 Static 450 VGS = 15 V, TC = 25 C, TVJ 175 C Fig. 20 ISD DC Source-Drain Current Max. Note 450 225 ISD (pulsed) Maximum Pulsed Source-Drain Current 900 -40 AC frequency 1Hz. Note 1 VGS = 15 V, TC = 90 C, TVJ 175 C Note 2 900 Note 1 Note 2 V 409 DC Source-Drain Current (Body Diode) Maximum Virtual Junction Temperature under Switching Conditions Test Conditions 1200 IDS (pulsed) Maximum Pulsed Drain-Source Current TVJ op Unit 2 VDS max DC Continuous Drain Current Typ. Sheet 3 Parameter IDS Min. 4 Symbol ISD BD 1 Thursday, April 11, 2019 Date: 5 175 A VGS = 15 V, TC = 25 C, TVJ 175 C VGS = - 4 V, TC = 25 C, TVJ 175 C tPmax limited by Tjmax VGS = 15 V, TC = 25 C C If MOSFET body diode is not used, VGS max = -8/+19 V Assumes RTH JC = 0.11C/W and RDS(on) = 4.6 m. Calculate PD = (TVJ - TC) / RTH JC. Calculate ID_MAX = (PD / RDS(on)) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. MOSFET Characteristics (Per Position) (TC = 25C unless otherwise specified) Symbol Parameter Min. V(BR)DSS Drain-Source Breakdown Voltage 1200 VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS RDS(on) 1.8 Typ. 2.5 200 Gate-Source Leakage Current 0.05 1.3 Drain-Source On-State Resistance (Devices Only) 2.6 3.7 4.6 355 EOn Turn-On Switching Energy, TJ = 25 C TJ = 125 C TJ = 175 C 11.0 11.7 13.0 Turn-Off Switching Energy, TJ = 25 C TJ = 125 C TJ = 175 C 10.1 11.3 12.1 Internal Gate Resistance 2.5 Ciss Input Capacitance 38.0 Coss Output Capacitance 1.5 Crss Reverse Transfer Capacitance 90 QGS Gate to Source Charge 355 QGD Gate to Drain Charge 500 QG Total Gate Charge 1330 FET Thermal Resistance, Junction to Case 0.11 Rth JC V Test Conditions Note VGS = 0 V, ID = 200 A VDS = VGS, ID = 132 mA VDS = VGS, ID = 132 mA, TJ = 175 C 5 Transconductance RG(int) 3.6 Unit 2.0 gfs EOff Max. A m S 360 mJ nF pF nC 0.13 VGS = 0 V, VDS = 1200 V VGS = 15 V, VDS = 0 V VGS = 15 V, ID = 450 A VGS = 15 V, ID = 450 A, TJ = 175 C VDS= 20 V, IDS= 450 A VDS= 20 V, IDS= 450 A, TJ = 175 C VDS = 600 V, ID = 450A, VGS = -4 V/15 V, RG(ext) = 0.0 , L= 13.6 H VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 2 Fig. 3 Fig. 4 Fig. 11 Fig. 13 Fig. 9 VDS = 800 V, VGS = -4 V/15 V ID = 450 A Per IEC60747-8-4 pg 21 C/W Fig. 17 Body Diode Characteristics (Per Position) (TC = 25C unless otherwise specified) Symbol Parameter 2 Min. Typ. 4.7 Max. Unit VSD Body Diode Forward Voltage trr Reverse Recovery Time 52 ns Qrr Reverse Recovery Charge 6.6 Irr Peak Reverse Recovery Current 195 C Err Reverse Recovery Energy TJ = 25 C TJ = 125 C TJ = 175 C 0.2 1.1 1.9 4.2 V A mJ Test Conditions VGS = -4 V, ISD = 450 A VGS = -4 V, ISD = 450 A, TJ = 175 C Note Fig. 7 VGS = -4 V, ISD = 450 A, VR = 600 V di/dt = 8 A/ns, TJ = 175 C VDS = 600 V, ID = 450A, VGS = -4 V/15 V, RG(ext) = 0.0 , L= 13.6 H Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. Fig. 14 Temperature Sensor (NTC) Characteristics Symbol Parameter R25 R/R P25 Min. Typ. Rated Resistance Max. 4.7 Unit k Tolerance of R25 1 % Maximum Power Dissipation 50 mW Test Conditions TNTC = 25 C Steinhart-Hart Modified Coefficients for R/T Computation: A B C D TNTC < 25 C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07 TNTC 25 C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07 Module Physical Characteristics Symbol Parameter Min. R3-1 Package Resistance, M1 0.72 R1-2 Package Resistance, M2 0.63 LStray Stray Inductance 6.7 TC Case Temperature W Weight MS Mounting Torque Visol Case Isolation Voltage 4.0 CTI Comparative Tracking Index 600 Clearance Distance -40 Note13 Note24 Unit m nH 125 Test Conditions TC = 125 C, Note13 TC = 125 C, Note 3 Between Terminals 2 and 3 C g 2.0 3.0 4.0 2.0 4.0 5.0 N-m kV Baseplate, M4 bolts Power Terminals, M5 bolts AC, 50 Hz, 1 min 12.5 From 2 to 3, Note24 11.5 From 1 to Baseplate, Note 4 5.7 From 2 to 5, Note 4 14.7 Creepage Distance Max. 175 13.7 3 Typ. mm From 5 to Baseplate, Note 4 From 2 to 3, Note 4 14.0 From 1 to Baseplate, Note 4 14.7 From 2 to 5, Note 4 14.3 From 5 to Baseplate, Note 4 Total Effective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance. Numbers reference the connections from the Schematic and Package Dimensions sections of this document. Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. Typical Performance 900 2.0 Drain-Source Current, IDS (A) 800 700 600 Normalized On-resistance (p.u.) Conditions: tp < 300 s VGS = 15 V 25 C -40 C 500 400 100 C 125 C 150 C 175 C 300 200 100 0 0.0 1.0 2.0 3.0 4.0 5.0 1.8 150 C 1.2 0.8 700 600 0 100 200 300 400 500 600 700 800 900 Conditions: tp < 300 s VDS = 20 V 175 C 150 C 125 C 100 C 400 1.0 0.8 300 0.6 200 0.4 0.2 25 C 0 C -25 C -40 C 100 -50 0 50 100 150 0 200 Virtual Junction Temperature, TVJ (C) Source-Drain Current, ISD (A) 800 700 900 Conditions: tp < 300 s VGS = 15 V 800 700 600 4.0 Conditions: tp < 300 s VGS = 0.0 V 500 25 C -40 C 400 6.0 8.0 400 300 25 C 0 C -25 C -40 C 300 100 C 125 C 150 C 175 C 200 100 0.0 1.0 2.0 10.0 175 C 150 C 125 C 100 C 600 500 0 2.0 Figure 4. Transfer Characteristic for Various Junction Temperatures Source-Drain Current, ISD (A) 900 0.0 Gate-Source Voltage, VGS (V) Figure 3. Normalized On-State Resistance vs. Juction Temperature 200 100 3.0 4.0 5.0 6.0 Source-Drain Voltage, VSD (V) Figure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 15 V 4 25 C 500 1.2 0.0 -40 C 1.0 Drain-Source Current, IDS (A) Normalized On-resistance (p.u.) 1.4 100 C Figure 2. Normalized On-State Resistance vs. Drain Current for Various Juction Temperatures Conditions: tp < 300 s VGS = 15 V ID = 450 A 1.6 125 C 1.4 Drain-Source Current, IDS (A) Figure 1. Output Characteristics for Various Junction Temperatures 1.8 175 C 1.6 Drain-Source Voltage, VDS (V) 2.0 Conditions: tp < 300 s VGS = 15 V 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Source-Drain Voltage, VSD (V) Figure 6. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 0 V (Body Diode) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. Typical Performance 900 1,000.00 Conditions: tp < 300 s VGS = - 4.0 V 700 600 175 C 150 C 125 C 100 C 500 400 300 200 0.0 1.0 2.0 3.0 4.0 5.0 0.10 6.0 0.01 7.0 1,000.00 Coss 400 600 2.5 2.0 1.5 1.0 0.5 800 1,000 1,200 -50 0 100 150 200 Figure 10. Threshold Voltage vs. Junction Temperature 60 80 Conditions: TVJ = 25 C VDS = 600 V RG(ext) = 0.0 VGS = -4/+15 V L = 13.6 H 40 EOn + EOff 30 EOff EOn 20 10 ERR 0 200 400 600 800 Drain-Source Current, IDS (A) Figure 11. Switching Energy vs. Drain Current (VDS = 600 V) Conditions: TVJ = 25 C VDS = 800 V RG(ext) = 0.0 VGS = -4/+15 V L = 13.6 H 70 Switching Energy (mJ) 50 Switching Energy (mJ) 50 Junction Temperature, TJ (C) Figure 9. Typical Capacitances vs. Drain to Source Voltage (0 - 1200V) 5 200 Conditions: VGS = VDS IDS = 132 mA Drain-Source Voltage, VDS (V) 0 150 3.0 0.0 200 100 3.5 Crss 0 50 4.0 Thresold Voltage, Vth (V) Capacitance (nF) Ciss 10.00 0.01 0 Figure 8. Typical Capacitances vs. Drain to Source Voltage (0 - 200V) TJ = 25 C VAC = 25 mV f = 100 kHz 0.10 Crss Drain-Source Voltage, VDS (V) Figure 7. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = - 4 V (Body Diode) 1.00 Coss 1.00 Source-Drain Voltage, VSD (V) 100.00 Ciss 10.00 25 C 0 C -25 C -40 C 100 0 TJ = 25 C VAC = 25 mV f = 100 kHz 100.00 Capacitance (nF) Source-Drain Current, ISD (A) 800 1000 60 50 EOn + EOff 40 EOff 30 EOn 20 10 0 ERR 0 200 400 600 800 Drain-Source Current, IDS (A) Figure 12. Switching Energy vs. Drain Current (VDS = 800 V) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. 1000 Typical Performance 25 Switching Energy (mJ) 2.5 Conditions: IDS = 450 A, VDD =600 V RG(ext) = 0.0 , VGS = -4/+15 V L = 13.6 H 20 15 EOn EOff 10 5 0 0 50 Conditions: IDS = 450 A, RG(ext) = 0.0 , VGS = -4/+15 V L = 13.6 H EOn + EOff Reverse Recovery Energy, ERR (mJ) 30 100 150 200 2.0 1.5 ERR (VDD = 600 V) 1.0 0.5 0.0 0 Conditions: IDS = 450 A, VDD = 600 V TVJ = 25C, VGS = -4/+15 V L = 13.6 H Reverse Recovery Energy, ERR (mJ) Switching Energy (mJ) EOn + EOff 0.20 0.15 50 EOn 40 0.10 EOff 30 20 0.05 10 ERR 0 2 4 6 8 10 External Gate Resistor, RG(ext) () 6 Figure 14. Reverse Recovery Energy vs. Junction Temperature 60 0 200 0.25 Conditions: IDS = 450 A, VDD =600 V TJV = 25 C, VGS = -4/+15 V L = 13.6 H 70 150 Junction Temperature, TVJ (C) Figure 13. MOSFET Switching Energy vs. Junction Temperature 80 100 50 Junction Temperature, TVJ (C) 90 ERR (VDD = 800 V) 12 0.00 0 2 4 6 8 10 External Gate Resistor, RG(ext) () Figure 15. MOSFET Switching Energy vs. External Gate Resistance Figure 16. Reserve Recovery Energy vs. External Gate Resistance Figure 17. MOSFET Juction to Case Transient Thermal Impedance, Zth JC (C/W) Figure 18. Forward Bias Safe Operating Area (FBSOA) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. 12 Typical Performance 1000 Drain-Source Current, IDS (A) 900 800 Chip Module 700 600 500 Conditions: TVJ = 175 C RG(ext) = 0.0 LStray-system = 6.0 nH LStray-module = 6.7 nH 400 300 200 100 0 0 200 400 600 800 1000 Drain-Source Voltage, VDS (V) 1200 Figure 20. Continuous Drain Current Derating vs. Case Temperature Figure 19. Reverse Bias Safe Operating Area (RBSOA) 600 VDS = 800 V TC = 90 C TVJ = 175 C RG(ext) = 0.0 MF = 1 Output Current, IOut (Arms) 500 400 300 200 100 0 0 20 40 60 80 Switching Frequency, FS (kHz) Figure 21. Maximum Power Dissipation Derating vs. Case Temperature 7 Figure 22. Typical Ouput Current Capablity vs. Switching Frequency (Inverter Application) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc. 5 6 4 3 5 2 4 3 Schematic and Pin Out D 53.00 2 44.75 0.20 1 D 15.75 0.30 0.20 4.50 0.20 1 12.50 0.30 D 3 31.00 0.40 5.50 0.40 8 4 4 9 5 5 C C 1.50 0.20 24.00 0.20 1 2 10 31.00 0.40 71.75 0.20 24.00 0.20 12.50 0.20 8,9 13.50 0.30 80.00 0.20 13.50 0.30 3 6 NTC 6 10 7 11 C 7 1 11 2 B 29.50 0.20 B Package Dimmension (mm) 6 44.00 0.30 5 4 2.54 3 2 3.00 0.20 D 53.00 0.20 15.75 0.30 44.75 0.20 12.50 0.30 Title A <Title> 13.50 0.30 12.00 0.30 4.50 0.20 0.64 2.54 B A 0.64 mm SIZE C 5 71.75 0.20 6 X 0.5 80.00 0.20 UNLESS OTHERWISE SPECIFIED 3 2 CREE CONFIDENTIAL This plot and the information contained within are the proprietary and confidential information of Cree, Inc. This plot may not be copied, reproduced, or disclosed to any unauthorized person without the written consent of Cree, Inc. .XX 0.25 TOLERANCE .XXX 0.125 VED 4 THIRD ANGLE PROJECTION NOT TO SCALE 4 31.00 0.40 DIMENSIONS PART # 13.50 0.30 SHEET 1 OF 2 APM-011-000 3 C A of 1 DATASHEET 1 DRAWING REV 1 Wolfspeed, A Cree Company Cree Fayetteville 535 W. Research Center Blvd. Fayetteville, AR 72701 2 4 5 1 31.00 0.40 2/7/2019 1 5.50 0.40 BMC Sheet 1.50 0.20 5 6 7 29.50 0.20 44.00 0.30 2.54 0.64 12.00 0.30 2.54 B 3.00 0.20 BY Wednesday, May 15, 2019 24.00 0.20 Date: Rev <RevCode> 24.00 0.20 12.50 0.20 Size Document Number Custom<Doc> 0.64 A DATASHEET DRAWING 8 Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 CREE CONFIDENTIAL SIZE DRAWN BY BMC 2/7/2019 DIMENSIONS mm Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subjectC to change without notice. the Cree logo, Wolfspeed(R), logo This plot andCree(R), the information contained withinand arethe theWolfspeed proprietary and are registered trademarks of Cree, Inc. .XX 0.25 confidential information of Cree, Inc. This plot may not be copied, CHECK TOLERANCE .XXX 0.125 reproduced, or disclosed to any unauthorized person without the written UNLESS OTHERWISE SPECIFIED THIRD ANGLE PROJECTION consent of Cree, Inc. APPROVED NOT TO SCALE X 0.5 PART # APM-011-000 Package Dimmension (mm) 2 1 E E Power Terminal Screw Maximum Penetration Depth 5.50 B F Maximum Penetration Depth [mm] DETAIL F SECTION E-E B SCALE 4 : 1 Supporting Links & Tools UNLESS OTHERWISE SPECIFIED: NAME DATE *A CGD12HBXMP: XM3 Evaluation Gate Driver TITLE: * CGD12HB00D: Differential Transceiver Board for CGD12HBXMP * CRD300DA12E-XM3: 300 kW Inverter Kit for Conduction-Optimized XM3 (CPWR-AN30) * KIT-CRD-CIL12N-XM3: Dynamic Performance Evaluation Board for the XM3 Module (CPWR-AN31) SIZE DWG. NO. REV * CPWR-AN28: Module Mounting Application Note A * CPWR-AN29: Thermal Interface Material Application Note SHEET 1 OF 1 SCALE: 1:1 WEIGHT: DIMENSIONS ARE IN INCHES TOLERANCES: FRACTIONAL ANGULAR: MACH BEND TWO PLACE DECIMAL THREE PLACE DECIMAL INTERPRET GEOMETRIC TOLERANCING PER: PROPRIETARY AND CONFIDENTIAL THE INFORMATION CONTAINED IN THIS DRAWING IS THE SOLE PROPERTY OF <INSERT COMPANY NAME HERE>. ANY REPRODUCTION IN PART OR AS A WHOLE WITHOUT THE WRITTEN PERMISSION OF <INSERT COMPANY NAME HERE> IS PROHIBITED. MATERIAL USED ON NEXT ASSY APPLICATION 2 DRAWN CHECKED A ENG APPR. MFG APPR. Q.A. COMMENTS: FINISH DO NOT SCALE DRAWING 1 Notes * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. * The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special precautions are required to realize optimal performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot. 9 Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright (c)2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree(R), the Cree logo, Wolfspeed(R), and the Wolfspeed logo are registered trademarks of Cree, Inc.