Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
1
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
CAB450M12XM3
1200V, 450A All-Silicon Carbide
Conduction Optimized, Half-Bridge Module
Technical Features
• High Power Density Footprint
• High Junction Temperature (175 °C) Operation
• Low Inductance (6.7 nH) Design
• Implements Conduction Optimized Third
Generation SiC MOSFET Technology
• Silicon Nitride Insulator and Copper Baseplate
VDS 1200 V
IDS
450 A
System Benefits
• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,
low inductance design.
• Isolated integrated temperature sensing enables high-level temperature protection.
• Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.
Applications
• Motor & Traction Drives
• Vehicle Fast Chargers
• Uninterruptable Power Supplies
• Smart-Grid / Grid-Tied Distributed Generation
Package 80 x 53 x 19 mm
5
5
4
4
3
3
2
2
1
1
D D
C C
B B
A A
V-
V+
Mid
G1
K1
G2
K2
NTC1
NTC2
V+
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11Thursday, April 11, 2019
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11Thursday, April 11, 2019
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11Thursday, April 11, 2019
NTC
Key Parameters (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
VDS max Drain-Source Voltage 1200
V
VGS max Gate-Source Voltage, Maximum Value -4 +19 AC frequency ≥ 1Hz. Note 1
VGS op
Gate-Source Voltage, Recommended
Op. Value -4 +15 Static
IDS DC Continuous Drain Current 450
A
VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20
409 VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C Note 2
ISD DC Source-Drain Current 450 VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C
ISD BD DC Source-Drain Current (Body Diode) 225 VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C
IDS (pulsed) Maximum Pulsed Drain-Source Current 900 tPmax limited by Tjmax
VGS = 15 V, TC = 25 ˚C
ISD (pulsed) Maximum Pulsed Source-Drain Current 900
TVJ op
Maximum Virtual Junction
Temperature under Switching
Conditions
-40 175 °C
Note 1 If MOSFET body diode is not used, VGS max = -8/+19 V
Note 2 Assumes RTH JC = 0.11°C/W and RDS(on) = 4.6 mΩ. Calculate PD = (TVJ – TC) / RTH JC. Calculate ID_MAX = √(PD / RDS(on))
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
2
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
MOSFET Characteristics (Per Position) (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200
V
VGS = 0 V, ID = 200 μA
VGS(th) Gate Threshold Voltage 1.8 2.5 3.6 VDS = VGS, ID = 132 mA
2.0 VDS = VGS, ID = 132 mA, TJ = 175 °C
IDSS Zero Gate Voltage Drain Current 5 200
μAVGS = 0 V, VDS = 1200 V
IGSS Gate-Source Leakage Current 0.05 1.3 VGS = 15 V, VDS = 0 V
RDS(on)
Drain-Source On-State Resistance (Devices
Only)
2.6 3.7 mΩ VGS = 15 V, ID = 450 A Fig. 2
Fig. 3
4.6 VGS = 15 V, ID = 450 A, TJ = 175 °C
gfs Transconductance
355
S
VDS= 20 V, IDS= 450 A
Fig. 4
360 VDS= 20 V, IDS= 450 A, TJ = 175 °C
EOn
Turn-On Switching Energy, TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
11.0
11.7
13.0
mJ
VDS = 600 V,
ID = 450A,
VGS = -4 V/15 V,
RG(ext) = 0.0 Ω,
L= 13.6 μH
Fig. 11
Fig. 13
EO
Turn-O Switching Energy, TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
10.1
11.3
12.1
RG(int) Internal Gate Resistance 2.5 Ω
Ciss Input Capacitance 38.0 nF VGS = 0 V, VDS = 800 V,
VAC = 25 mV, f = 100 kHz
Fig. 9Coss Output Capacitance 1.5
Crss Reverse Transfer Capacitance 90 pF
QGS Gate to Source Charge 355
nC
VDS = 800 V, VGS = -4 V/15 V
ID = 450 A
Per IEC60747-8-4 pg 21
QGD Gate to Drain Charge 500
QGTotal Gate Charge 1330
Rth JC FET Thermal Resistance, Junction to Case 0.11 0.13 °C/W Fig. 17
Body Diode Characteristics (Per Position) (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
VSD Body Diode Forward Voltage 4.7 VVGS = -4 V, ISD = 450 A Fig. 7
4.2 VGS = -4 V, ISD = 450 A, TJ = 175 °C
trr Reverse Recovery Time 52 ns
VGS = -4 V, ISD = 450 A, VR = 600 V
di/dt = 8 A/ns, TJ = 175 °C
Qrr Reverse Recovery Charge 6.6 μC
Irr Peak Reverse Recovery Current 195 A
Err
Reverse Recovery Energy TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
0.2
1.1
1.9
mJ
VDS = 600 V, ID = 450A,
VGS = -4 V/15 V, RG(ext) = 0.0 Ω,
L= 13.6 μH
Fig. 14
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are registered trademarks of Cree, Inc.
3
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Temperature Sensor (NTC) Characteristics
Module Physical Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions
R3-1 Package Resistance, M1 0.72 mΩ TC = 125 °C, Note13
R1-2 Package Resistance, M2 0.63 TC = 125 °C, Note 3
LStray Stray Inductance 6.7 nH Between Terminals 2 and 3
TCCase Temperature -40 125 °C
W Weight 175 g
MSMounting Torque 2.0 3.0 4.0 N-m Baseplate, M4 bolts
2.0 4.0 5.0 Power Terminals, M5 bolts
Visol Case Isolation Voltage 4.0 kV AC, 50 Hz, 1 min
CTI Comparative Tracking Index 600
Clearance Distance
12.5
mm
From 2 to 3, Note24
11.5 From 1 to Baseplate, Note 4
5.7 From 2 to 5, Note 4
13.7 From 5 to Baseplate, Note 4
Creepage Distance
14.7 From 2 to 3, Note 4
14.0 From 1 to Baseplate, Note 4
14.7 From 2 to 5, Note 4
14.3 From 5 to Baseplate, Note 4
Note13 Total Eective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance.
Note24 Numbers reference the connections from the Schematic and Package Dimensions sections of this document.
Steinhart-Hart Modified Coeicients for R/T Computation:
A B C D
TNTC < 25 °C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07
TNTC ≥ 25 °C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07
Symbol Parameter Min. Typ. Max. Unit Test Conditions
R25 Rated Resistance 4.7 kΩ TNTC = 25 °C
∆R/R Tolerance of R25 ±1 %
P25 Maximum Power Dissipation 50 mW
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
4
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Figure 2. Normalized On-State Resistance vs. Drain Current for Various
Juction Temperatures
Typical Performance
Figure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 15
V
Figure 1. Output Characteristics for Various Junction
Temperatures
Figure 3. Normalized On-State Resistance vs.
Juction Temperature
Figure 4. Transfer Characteristic for Various Junction
Temperatures
Figure 6. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 0
V (Body Diode)
0
100
200
300
400
500
600
700
800
900
0.0 1.0 2.0 3.0 4.0 5.0
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
150 °C
125 °C
-40 °C
100 °C
Conditions:
tp < 300 μs
V
GS
= 15 V
25 °C
175 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 050 100 150 200
Normalized On-resistance (p.u.)
Virtual Junction Temperature, TVJ (°C)
Conditions:
tp < 300 μs
V
GS
= 15 V
I
D
= 450 A
0
100
200
300
400
500
600
700
0.0 2.0 4.0 6.0 8.0 10.0
Drain-Source Current, I
DS
(A)
Gate-Source Voltage, V
GS
(V)
-25 °C
-40 °C
0 °C
25 °C
100 °C
125 °C
150 °C
175 °C
Conditions:
tp < 300 μs
VDS = 20 V
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0100 200 300 400 500 600 700 800 900
Normalized On-resistance (p.u.)
Drain-Source Current, IDS (A)
25 °C
100 °C
125 °C
150 °C
175 °C
-40 °C
Conditions:
tp < 300 μs
V
GS
= 15 V
0
100
200
300
400
500
600
700
800
900
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Source-Drain Current, I
SD
(A)
Source-Drain Voltage, V
SD
(V)
150 °C
125 °C
-40 °C
100 °C
Conditions:
tp < 300 μs
V
GS
= 15 V
25 °C
175 °C
0
100
200
300
400
500
600
700
800
900
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Source-Drain Current, I
SD
(A)
Source-Drain Voltage, V
SD
(V)
150 °C
125 °C
-40 °C
100 °C
Conditions:
tp < 300 μs
V
GS
= 0.0 V
25 °C
0 °C
-25 °C
175 °C
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
5
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Figure 8. Typical Capacitances vs. Drain to Source Voltage
(0 - 200V)
Typical Performance
Figure 11. Switching Energy vs. Drain Current
(VDS = 600 V)
Figure 7. 3rd Quadrant Characteristic vs. Junction Temperatures at
VGS = - 4 V (Body Diode)
Figure 9. Typical Capacitances vs. Drain to Source Voltage
(0 - 1200V) Figure 10. Threshold Voltage vs. Junction Temperature
Figure 12. Switching Energy vs. Drain Current
(VDS = 800 V)
0
100
200
300
400
500
600
700
800
900
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Source-Drain Current, I
SD
(A)
Source-Drain Voltage, V
SD
(V)
150 °C
125 °C
-40 °C
100 °C
Conditions:
tp < 300 μs
V
GS
= -4.0 V
25 °C
0 °C
-25 °C
175 °C
0
10
20
30
40
50
60
0200 400 600 800 1000
Switching Energy (mJ)
Drain-Source Current, IDS (A)
Conditions:
T
VJ
= 25 °C
V
DS
= 600 V
R
G(ext)
= 0.0 Ω
V
GS
= -4/+15 V
L = 13.6 µH
E
On
E
Off
E
RR
E
On +
E
Off
0
10
20
30
40
50
60
70
80
0200 400 600 800 1000
Switching Energy (mJ)
Drain-Source Current, IDS (A)
Conditions:
T
VJ
= 25 °C
V
DS
= 800 V
R
G(ext)
= 0.0 Ω
V
GS
= -4/+15 V
L = 13.6 µH
E
On
E
Off
E
RR
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 050 100 150 200
Thresold Voltage, Vth (V)
Junction Temperature, TJ(°C)
Conditions:
V
GS
= V
DS
I
DS
= 132 mA
0.01
0.10
1.00
10.00
100.00
1,000.00
0200 400 600 800 1,000 1,200
Capacitance (nF)
Drain-Source Voltage, V
DS
(V)
C
oss
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
C
rss
C
iss
0.01
0.10
1.00
10.00
100.00
1,000.00
050 100 150 200
Capacitance (nF)
Drain-Source Voltage, VDS (V)
C
oss
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
C
rss
C
iss
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
6
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Figure 14. Reverse Recovery Energy vs. Junction Temperature
Typical Performance
Figure 17. MOSFET Juction to Case Transient Thermal Impedance,
Zth JC (°C/W)
Figure 13. MOSFET Switching Energy vs. Junction Temperature
Figure 15. MOSFET Switching Energy vs. External Gate Resistance Figure 16. Reserve Recovery Energy vs. External Gate Resistance
Figure 18. Forward Bias Safe Operating Area (FBSOA)
0
5
10
15
20
25
30
050 100 150 200
Switching Energy (mJ)
Junction Temperature, T
VJ
(°C)
Conditions:
I
DS
= 450 A, V
DD
=600 V
R
G(ext)
= 0.0 Ω, V
GS
= -4/+15 V
L = 13.6 µH
E
On
E
Off
E
On +
E
Off
0
10
20
30
40
50
60
70
80
90
0246810 12
Switching Energy (mJ)
External Gate Resistor, R
G(ext)
(Ω)
Conditions:
I
DS
= 450 A, V
DD
=600 V
T
JV
= 25 °C, V
GS
= -4/+15 V
L = 13.6 µH
E
On
E
Off
E
RR
E
On +
E
Off
0.0
0.5
1.0
1.5
2.0
2.5
050 100 150 200
Reverse Recovery Energy, E
RR
(mJ)
Junction Temperature, T
VJ
(°C)
Conditions:
I
DS
= 450 A,
R
G(ext)
= 0.0 Ω,
V
GS
= -4/+15 V
L = 13.6 µH
E
RR
(V
DD
= 600 V)
E
RR
(V
DD
= 800 V)
0.00
0.05
0.10
0.15
0.20
0.25
0246810 12
Reverse Recovery Energy, ERR (mJ)
External Gate Resistor, RG(ext) (Ω)
Conditions:
I
DS
= 450 A, V
DD
= 600 V
T
VJ
= 25°C, V
GS
= -4/+15 V
L = 13.6 µH
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
7
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Figure 20. Continuous Drain Current Derating vs.
Case Temperature
Typical Performance
Figure 19. Reverse Bias Safe Operating Area (RBSOA)
Figure 21. Maximum Power Dissipation Derating vs.
Case Temperature
Figure 22. Typical Ouput Current Capablity vs. Switching Frequency
(Inverter Application)
0
100
200
300
400
500
600
020 40 60 80
Output Current, I
Out
(A
rms
)
Switching Frequency, F
S
(kHz)
V
DS
= 800 V
T
C
= 90 °C
T
VJ
= 175 °C
R
G(ext)
= 0.0 Ω
MF = 1
0
100
200
300
400
500
600
700
800
900
1000
0200 400 600 800 1000 1200
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
Chip
Module
Conditions:
T
VJ
= 175 °C
R
G(ext)
= 0.0 Ω
L
Stray-system
= 6.0 nH
L
Stray-module
= 6.7 nH
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
8
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Schematic and Pin Out
Package Dimmension (mm)
5
5
4
4
3
3
2
2
1
1
D D
C C
B B
A A
2
3
1
4
5
6
7
11
10
8,9
Title
Size Document Number Rev
Date: Sheet of
<Doc> <RevCode>
<Title>
Custom
11Wednesday, May 15, 2019
Title
Size Document Number Rev
Date: Sheet of
<Doc> <RevCode>
<Title>
Custom
11Wednesday, May 15, 2019
Title
Size Document Number Rev
Date: Sheet of
<Doc> <RevCode>
<Title>
Custom
11Wednesday, May 15, 2019
NTC
53.00 ±0.20
44.75 ±0.20
80.00
±0.20
71.75
±0.20
4.50
±0.20
29.50 ±0.20
12.50
±0.20
5.50
±0.40
31.00
±0.40
31.00
±0.40
13.50
±0.30
13.50
±0.30
1.50
±0.20
24.00
±0.20
24.00
±0.20
44.00 ±0.30
12.50 ±0.30
15.75 ±0.30
3.00
±0.20
12.00
±0.30
0.64
0.64
2.54
2.54
3
2
1
8
9
10
11
4
5
7
6
CREE CONFIDENTIAL
This plot and the information contained within are the proprietary and
confidential information of Cree, Inc. This plot may not be copied,
reproduced, or disclosed to any unauthorized person without the written
consent of Cree, Inc.
Cree Fayetteville
535 W. Research Center Blvd. Fayetteville, AR 72701
DATASHEET DRAWING
PART #
APM-011-000
REV
1
DRAWN BY
CHECK
APPROVED
BMC
2/7/2019
UNLESS OTHERWISE SPECIFIED
THIRD ANGLE PROJECTION
±
.XX
0.25
DIMENSIONS
mm
TOLERANCE
SIZE
.XXX
X°
±
±
0.125
0.5°
A A
B B
C C
D D
6
6
5
5
4
4
3
3
2
2
1
1
C
NOT TO SCALE
SHEET 1 OF 2
Wolfspeed, A Cree Company
53.00
±0.20
44.75
±0.20
80.00
±0.20
71.75
±0.20
4.50
±0.20
29.50
±0.20
12.50
±0.20
5.50
±0.40
31.00
±0.40
31.00
±0.40
13.50
±0.30
13.50
±0.30
1.50
±0.20
24.00
±0.20
24.00
±0.20
44.00
±0.30
12.50
±0.30
15.75
±0.30
3.00
±0.20
12.00
±0.30
0.64
0.64
2.54
2.54
3
2
1
8
9
10
11
4
5
7
6
CREE CONFIDENTIAL
This plot and the information contained within are the proprietary and
confidential information of Cree, Inc. This plot may not be copied,
reproduced, or disclosed to any unauthorized person without the written
consent of Cree, Inc.
Cree Fayetteville
535 W. Research Center Blvd. Fayetteville, AR 72701
DATASHEET DRAWING
PART #
APM-011-000
REV
1
DRAWN BY
CHECK
APPROVED
BMC
2/7/2019
UNLESS OTHERWISE SPECIFIED
THIRD ANGLE PROJECTION
±
.XX
0.25
DIMENSIONS
mm
TOLERANCE
SIZE
.XXX
X°
±
±
0.125
0.5°
A A
B B
C C
D D
6
6
5
5
4
4
3
3
2
2
1
1
C
NOT TO SCALE
SHEET 1 OF 2
Wolfspeed, A Cree Company
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
9
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Package Dimmension (mm)
Power Terminal Screw
Maximum Penetration Depth
Supporting Links & Tools
• CGD12HBXMP: XM3 Evaluation Gate Driver
• CGD12HB00D: Dierential Transceiver Board for CGD12HBXMP
• CRD300DA12E-XM3: 300 kW Inverter Kit for Conduction-Optimized XM3 (CPWR-AN30)
• KIT-CRD-CIL12N-XM3: Dynamic Performance Evaluation Board for the XM3 Module (CPWR-AN31)
• CPWR-AN28: Module Mounting Application Note
• CPWR-AN29: Thermal Interface Material Application Note
Notes
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human
body nor in applications in which failure of the product could lead to death, personal injury or property damage, including
but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar
emergency medical equipment, aircra navigation or communication or control systems, or air traic control systems.
• The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special
precautions are required to realize optimal performance. The interconnection between the gate driver and module housing
needs to be as short as possible. This will aord optimal switching time and avoid the potential for device oscillation. Also, great
care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.
EE
F
SECTION
E-E
5.50
DETAIL
F
SCALE
4 : 1
Maximum
Penetration
Depth [mm]
A A
B B
2
2
1
1
DO NOT SCALE DRAWING
SHEET 1 OF 1
UNLESS OTHERWISE SPECIFIED:
SCALE: 1:1
WEIGHT:
REV
DWG. NO.
A
SIZE
TITLE:
NAME
DATE
COMMENTS:
Q.A.
MFG APPR.
ENG APPR.
CHECKED
DRAWN
FINISH
MATERIAL
INTERPRET GEOMETRIC
TOLERANCING PER:
DIMENSIONS ARE IN INCHES
TOLERANCES:
FRACTIONAL
ANGULAR: MACH
BEND
TWO PLACE DECIMAL
THREE PLACE DECIMAL
APPLICATION
USED ON
NEXT ASSY
PROPRIETARY AND CONFIDENTIAL
THE INFORMATION CONTAINED IN THIS
DRAWING IS THE SOLE PROPERTY OF
<INSERT COMPANY NAME HERE>. ANY
REPRODUCTION IN PART OR AS A WHOLE
WITHOUT THE WRITTEN PERMISSION OF
<INSERT COMPANY NAME HERE> IS
PROHIBITED.