DATA SHEET 2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS: SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature UNITS VCBO VCEO VEBO IC PD PD 25 15 5.0 100 0.5 1.2 TJ,Tstg -65 to +200 JA JC Thermal Resistance Thermal Resistance V V V mA W W C 350 C/W 146 C/W ELECTRICAL CHARACTERISTICS: 2N2411 MIN MAX SYMBOL TEST CONDITIONS ICES ICES IEBO VCE=15V VCE=15V, TA=150C VEB=5.0V BVCBO BVCEO VCE(SAT) VBE(SAT) hFE hFE hFE hFE hfe Cob Cib IC=10A IC=10mA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=0.5V, IC=50A VCE=0.5V, IC=10mA VCE=0.5V, IC=10mA, TA=-55C VCE=1.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz UNITS 10 10 nA 10 10 10 A A 0.2 0.9 V V V V 25 15 0.7 10 20 2N2412 MIN MAX 25 15 0.2 0.9 60 10 10 1.4 0.7 20 40 120 20 20 1.4 5.0 8.0 5.0 8.0 pF pF (CONTINUED ON REVERSE SIDE) R0 2N2411 / 2N2412 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) SYMBOL 2N2411 MIN MAX TEST CONDITIONS td tr ton VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300 VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300 VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300 ts tf toff 2N2412 MIN MAX UNITS 10 10 ns 20 20 ns 25 25 ns IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300 IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300 90 90 ns 20 20 ns IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300 100 100 ns JEDEC TO-18 CASE - MECHANICAL OUTLINE A B D SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J C E F LEAD #2 LEAD #1 I 45 G H LEAD #3 J R1 Lead Code: 1) Emitter 2) Base 3) Collector DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.209 0.230 5.31 5.84 0.178 0.195 4.52 4.95 0.030 0.76 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.019 0.41 0.48 0.100 2.54 0.050 1.27 0.036 0.046 0.91 1.17 0.028 0.048 0.71 1.22 TO-18 (REV: R1)