BAT42WS/BAT43WS
Taiwan Semiconductor
1 Version:G1709
200mA, 30V Schottky Barrier Diode
FEATURES
● Designed for mounting on small surface
● Low capacitance
● Low forward voltage drop
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Adapters
● For switching power supply
● Low stored charge
● Inverter
MECHANICAL DATA
● Case: SOD-323F
● Molding compound meets UL 94 V-0 flammability rating
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
200
mA
VRRM
30
V
IFSM
4
A
VF at IF=200mA
1
V
TJ Max.
125
°C
Package
SOD-323F
Configuration
Single dice
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
SYMBOL
BAT42WS
BAT43WS
UNIT
B1
B2
VRRM
30
V
VR
30
V
IF(AV)
200
mA
IFSM
4
A
TJ
-65 to +125
°C
TSTG
-65 to +125
°C
BAT42WS/BAT43WS
Taiwan Semiconductor
2 Version:G1709
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
MAX
UNIT
Forward voltage per diode (1)
BAT42WS
IF = 200mA,
TJ = 25°C
VF
-
1.00
V
IF = 10mA,
TJ = 25°C
-
0.40
IF = 50mA,
TJ = 25°C
-
0.65
BAT43WS
IF = 200mA,
TJ = 25°C
-
1.00
IF = 2mA,
TJ = 25°C
-
0.33
IF = 15mA,
TJ = 25°C
-
0.45
Reverse voltage
IR=100µA, TJ = 25°C
VR
30
-
V
Reverse current @
rated VR per diode (2)
VR=25V TJ = 25°C
IR
-
500
nA
Junction capacitance
1 MHz, VR=1V
CJ
7(Typ.)
pF
Reverse recovery time
IF=IR=10mA, RL=100Ω,
IRR=1mA
trr
5(Typ.)
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX(*)
PACKAGE
PACKING
BATXXWS
(Note 1)
RR
G
SOD-323F
3K / 7" Reel
R9
10K / 13" Reel
Notes:
1. "xx" is device code from "42"(BAT42WS) to "43"(BAT43WS)
*: optional available
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
BAT42WS RRG
BAT42WS
RR
G
Green compound
BAT42WS/BAT43WS
Taiwan Semiconductor
3 Version:G1709
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Forward Characteristics
Fig.3 Typical Reverse Characteristics
Fig.4 Total Capacitance VS. Reverse Voltage
0
20
40
60
80
100
120
025 50 75 100 125 150
Tj=125oC
0.1
1
10
100
0200 400 600 800
T
A
= -25oC
TA= 25oC
TA= 75oC
TA= 125oC
0.01
0.1
1
10
100
1000
010 20 30 40
TA=125oC
TA=75oC
TA=25oC
1
10
100
010 20 30 40
T
j
=25oC
f=1MHz
IF, Instantaneous Forward Current (mA)
TA, Ambient Temperature (oC)
CT, Total Capacitance (pF)
VR, Instantaneous Reverse Voltage (V)
VF, Instantaneous Forward Voltage (mV)
IO, Average Rectified Current (mA)
VR, Reverse Voltage (V)
IR, Instantaneous Reverse Current (uA)
BAT42WS/BAT43WS
Taiwan Semiconductor
4 Version:G1709
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
SOD-323F
DIM.
Unit(mm)
Unit(inch)
Min
Max
Min
Max
A
1.15
1.35
0.045
0.053
B
2.30
2.80
0.091
0.110
C
0.25
0.40
0.010
0.016
D
1.60
1.80
0.063
0.071
E
0.80
1.10
0.031
0.043
F
0.05
0.25
0.002
0.010
DIM.
Unit(mm)
Unit(inch)
Typ.
Typ.
A
0.63
0.025
B
0.83
0.033
C
1.60
0.063
D
2.86
0.113
BAT42WS/BAT43WS
Taiwan Semiconductor
5 Version:G1709
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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