TLP155E
1 2019-05-27
© 2019
Toshiba Electronic Devices & Storage Corporation
TOSHIB A P hot ocoupler IRED + Photo IC
TLP155E
Plasma Display Panel (PDP)
Industrial Inverter
MOS FET / IGBT Gate Driver
The Toshiba TLP 155E consists of an infrared emitting diodes and integrated
high gain, high-speed photodetectors. The TLP155E is housed in the SO6
package.
The photodete ctor has an inter nal Faraday shie ld that pr ov id es a guarante ed
common-mode transient immunity of ±15 kV/μs. TLP155E is suit able for dire ct
gate driving circuit for IGBTs or power MOSFETs.
Buffer logic type (Totem pole output)
Package type: SO6
Peak Output Current : IOP = ±0.6 A (max)
Guaranteed performance over temperature: -40 to 100 °C
Threshold Input Current: IFLH = 7.5 mA (max)
Propagation delay time : tpLH / tpHL = 200 ns (max)
Common mode transient immunity : ±15 kV/μs (min)
Isolation voltage : 3750 Vrms (min)
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
Note 1: When a EN 60747-5-5 approved type is needed,
please designate the Option(V4).
Truth Ta ble
Input LED M1 M2 Output
H
ON
ON
OFF
H
L
OFF
OFF
ON
L
Constr uct io n Mec hanic a l Ratings
JEDEC
―
JEITA
―
TOSHIBA
11-4L1
Creepage distance 5.0 mm (min)
Clearance dis tan ce 5.0 mm (min)
Insulation thickness 0.4 mm (min)
1
3
4
5
6
SHIELD
1+
3−
VCC
VO
GND
(M1)
(M2)
I
CC
I
O
I
F
VF
6
5
4
SHIELD
Unit: mm
1:ANODE
3:
CATHODE
4:GND
5
:VO (Output)
6:
VCC
Pin Conf igurat ion ( Top V iew)
Schematic
Start of commercial production
2010-08
2.1 ± 0.1
1.27
4.55 ± 0.15
1
3
5
4
3.7 ± 0.15
7.0 ± 0.4
6
0.1
0.4
2.54
0.5 min
0.15
TLP155E
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Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics
Symbol
Rating
Unit
LED
Forward Current
IF
20
mA
Forward Current Derating (Ta ≥ 92°C)
ΔIF /°C
-0.63
mA/°C
Pulse Forward Current (Note 1)
IFPT
1
A
Reverse Voltage
VR
5
V
Input Power Dissipation PD 40 mW
Input Power Dissipation Derating (Ta ≥ 92°C)
ΔPD/°C
-1.2
mW/°C
Junction Temperature
Tj
125
°C
DETECTOR
“H” Peak Output Current (Note 2)
IOPH
-0.6
A
“L” Peak Output Current (Note 2) I
OPL
0.6 A
Output Voltage
VO
35
V
Supply Voltage
VCC
35
V
Output Power Dissipation
PO
80
mW
Output Power Dissipati on Derat i ng (Ta ≥ 85°C) ΔPO/°C -2.0 mW/°C
Junction Temperature
Tj
125
°C
Operating f requency (Note 3)
f
250
kHz
Operating Temperature Range
Topr
-40 to 100
°C
Storage Temperature Range T
stg
-55 to 125 °C
Lead Soldering Temperature (10 s)
Tsol
260
°C
Isolation Voltage (AC, 60 s, R.H.≤ 60 %) (Note 4)
BVs
3750
Vrms
Note: Using cont inuously unde r heavy loads (e.g. the applica tion of high temp erature/curr ent/voltage a nd the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating co ndi tion s (i.e. operat ing te mper at ure /current/voltage, etc.) are w ithin t he ab sol ut e m aximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling P recautions”/“D erating Con cept and M ethods”) and indiv idual reliability data (i.e. reliability test report
and estimated failure rate, etc.).
Note 1: Pulse width ≤ 1 μs, 300 pps.
Note 2: Exponential waveform pulse width PW ≤ 2 μs, f ≤ 10 kHz, VCC = 20 V, Ta = -40 to 100 °C
Note 3: Exponential waveform pulse width PW ≤ 80 ns, IOPH ≥ -0.25 A, I OPL ≤ 0.25 A, VCC = 20V, Ta = -40 to 100 °C
Note 4: This device is regarded as a two terminal device: pins 1 and 3 are shorted together, as are pins 4, 5 and 6.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ.
Max
Unit
Input Current, High Level (Note 1) I
FLH
10 - 15 mA
Input Voltage, Low Level
VFHL
0
-
0.8
V
Supply Vol tage*
VCC
10
-
30
V
Peak output current
IOPH/ IOPL
-
-
±0.2
A
Operating Temperature T
opr
-40 - 100 °C
* This item denotes operating range, not meaning of recommended operating conditions.
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this docum ent.
Note 1: Input signal rise time (fall time) < 0.5 μs.
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = −40 to 100 °C, unless otherwise specified)
Characteristics Symbol Test
Circuit Test Condition Min Typ.* Max Unit
Forward voltage VF ― IF = 10 mA, Ta = 25 °C 1.40 1.55 1.80 V
Temperature c oeffic i ent of forward
voltage ∆VF/∆Ta ― IF = 10 mA ― -1.8 ― mV/°C
Input reverse current IR ― VR = 5 V, Ta = 25 °C ― ― 10 μA
Input capacitance CT ― VF = 0 V, f = 1 MHz, Ta = 25 °C ― 60 ― pF
Output current
(Note 1)
“H” Level IOPH1 1 VCC = 15 V
IF = 10 mA V6-5 = 4 V ― -0.5 -0.2
A
IOPH2 V6-5 = 10 V ― ― -0.4
“L” Level IOPL1 2 VCC = 15 V
IF = 0 mA V5-4 = 2 V 0.2 0.5 ―
IOPL2 V5-4 = 10 V 0.4 ― ―
Output voltage “H” Level VOH 3 VCC = 10 V
IO = −100 mA,
IF = 10 mA 6.0 8.4 ― V
“L” Level VOL 4 IO = 100 mA,
VF = 0.8 V ― 0.3 1.0
Supply current “H” Level ICCH 5 VCC = 10 to 20 V
VO=Open IF = 10 mA ― 1.5 3.0 mA
“L” Level ICCL 6 IF = 0 mA ― 1.5 3.0
Threshold input current L → H IFLH ― VCC = 15 V, VO > 1 V ― 1.0 7.5 mA
Threshold input volt age H → L VFHL ― VCC = 15 V, VO < 1 V 0.8 ― ― V
Supply voltage VCC ― ― 10 ― 30 V
*All typical values are at Ta= 25°C.
Note: T his product is mor e sens itiv e than conv ent ional products to electrostatic discharge (ESD) owing to its low
power consumption design. It is therefore all the more necessary to observe general precautions regarding
ESD when handling this component.
Note 1: Duration of IO time ≤ 50 μs, 1 pulse
Isolation Characteristics (Ta = 25 °C)
Characteristics Symbol Test Conditi on Min Typ. Max Unit
Capacitanc e input to output CS VS = 0 V , f = 1MHz (Note 1)
― 0.8 ― pF
Isolation resist ance RS R.H. ≤ 60 %, VS = 500 V (Note 1)
1×1012 1014 ― Ω
Isolation voltage BVS AC, 60 s 3750 ― ― Vrms
Note 1: This device is regarded as a two terminal device: pins 1 and 3 are shorted toge ther, as are pins 4, 5 and 6.
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Switching Characteristics (NOTE)(Ta = −40 to 100 °C, unless otherwise specified)
Characteristics Symbol Test
Circuit
Test Condition Min Typ.* Max Unit
Propagation delay time
L → H tpLH
7
VCC = 20 V
Rg = 30 Ω
Cg = 1 nF
F = 250 kHz
Duty = 50 %
Ta = 25 °C
IF = 0 → 10 mA ― 120 170
ns
H → L tpHL Ta = 25 °C
IF = 10 → 0 mA ― 120 170
L → H tpLH IF = 0 → 10 mA 50 120 200
H → L tpHL IF = 10 → 0 mA 50 120 200
Propagation delay skew (Note 1) tpsk IF = 0 ↔ 10 mA -85 ― 85
Switching time dispersion | tpHL-tpLH | IF = 0 ↔ 10 mA ― 5 50
Output rise time (10−90 %) tr IF = 0 → 10 mA ― 35 ―
Output fall time (90−10 %) tf IF = 10 → 0 mA ― 15 ―
Common mode transient immunity at
HIGH level output CMH
8
VCM =1000
Vp-p
VCC = 20 V
Ta = 25 °C
IF = 10 mA
VO (min) = 16 V −15 ― ―
kV/μs
Common mode transient immunity at
LOW level output CML IF = 0 mA
VO (max) = 1 V 15 ― ―
( * ): All typical values are at Ta = 25 °C.
Note: A ceramic capacitor (0.1 μF) should be connected from pin 6 (VCC) to pin 4 (GND) to stabilize the operation of the
high gain linear amplifier. Failure to provide the bypass may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Note 1: Propagation delay sk ew is defined as the difference between the largest and smallest propagation delay time (i.e.
tpHL or tpLH) of multiple samples. Evaluations of these samples are conducted under identical test conditions
(supply voltage, input current, temperature, etc.).
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Test Circuit 1: I
OPH
Test Circuit 2: I
OPL
Test Circuit 3: V
OH
Test Circuit 4: V
OL
Test Circuit 5: I
CCH
Test Circuit 6: I
CCL
A
IOPL
V
5-
4
VCC
1
3
4
6
0.1
μF
V
VCC
V
O
IF
1
3
4
6
IO
0.1
μF
VOL
V
CC
V
VF
1
3
4
6
IO
0.1μF
VCC
A
ICCH
3
4
6
0.1
μ
F
VCC
A
ICCL
1
3
4
6
0.1
μ
F
A
IF
1
3
4
6
IOPH
V
6-
5
VCC
0.1
μF
IF
*V
OH =VCC-VO
5
5
5
5
5
5
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Test Circuit 7: tpLH, tpHL, tr, tf, |tpHL-tpLH|
Test Circuit 8: CMH, CML
CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output
voltage in the LOW (HIGH) state.
90%
1
0
%
1000 V
tf tr
16V
CM
H
1V
CML
V
CM
VO
•
SW A: IF = 10 mA
•
SW B: IF = 0
mA
CM
L
=
800 V
tr (μs)
CM
H = −
800 V
tf (μs)
VCC
1
3
4
6
0.1 μF
VO
Rg = 30 Ω
Cg
= 1
nF
IF
tpHL
IF
9
0%
t
f
50%
1
0%
VO
tpLH
tr
VOH
VOL
1
6
IF
3
4
0.1
μ
F
VO
VCC
SW
A
B
+
−
V
CM
I
F=10mA (P.G)
(f=250kHz, duty=50%, tr=tf=5ns)
5
5
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This curve shows the maximum
limit to the input forward current.
V
CC = 15 V
V
O > 1 V
IF = 10 mA
VCC = 30 V
IF = 0 mA
VCC = 30 V
Low
-
level supply current
I
CCL
(mA)
High
-
level supply current
I
CCH
(mA)
Threshold input current (L/H)
IFLH (mA)
Input forward current
I
F
(mA)
I
F
– T
a
Ambient temperature Ta (°C)
P
O
– T
a
I
FLH
– T
a
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
CCL
– T
a
I
CCH
– T
a
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Ta = 100°C
80°C
50°C
25°C
0°C
−20°
C
−40°
C
I
F
– V
F
Input forward voltage VF (V)
Input forward current I
F
(mA)
Output power dissipat i on
P
O
(mW)
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Toshiba Electronic Devices & Storage Corporation
IF = 10 mA, f = 250 kHz, Duty = 50%
Rg = 30 Ω, Cg = 1 nF, VCC = 20 V
VF = 0.8 V
IO = 100mA
V
CC
= 30 V
IF = 10 mA
IO = -100 mA
VCC = 10 V
V
CC
= 30 V
V
CC
= 15 V
IF = 10 mA
V
CC
= 15 V
IF = 0 mA
Ta = 25°C
Ta = 100°C
Ta = −40°C
Ta = 100°C
Ta = 25°C
Ta = −40°C
Propagation delay tim e, Puls e width distort i on
tpLH, tpHL, |tpHL – tpLH| (ns)
High-level output voltage drop
VOH – VCC (V)
High-
level output voltage
V
OH
(V)
V
OL
– T
a
V
OH
– T
a
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
V
OL
– I
OPL
(V
OH
– V
CC
) – I
OPH
Peak low-level output c urrent IOPL (A)
Peak high-level output c urrent IOPH (A)
t
pLH
, t
pHL
, |t
pHL
– t
pLH
| – T
a
Ambient temperature Ta (°C)
VCC = 10 V
tpLH
t
pHL
|tpHL
－
tpLH|
t
pHL
t
pLH
Ta = 25°C, f = 250 kHz, Duty = 50%
Rg = 30 Ω, Cg = 1 nF, IF = 10 mA
|tpHL
－
tpLH|
tpLH, tpHL, |tpHL – tpLH| – VCC
Supply voltage VCC (V)
Propagation delay tim e, Puls e width distort i on
tpLH, tpHL, |tpHL – tpLH| (ns)
Low-
level output voltage
VOL (V)
Low-
level output voltage
V
OL
(V)
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Toshiba Electronic Devices & Storage Corporation
Ta = 25°C, f = 250 kHz, Duty = 50%
Rg = 30 Ω, Cg = 1 nF, VCC = 20 V
tpLH
tpHL
|t
pHL
－
t
pLH
|
t
pLH
, t
pHL
, |t
pHL
– t
pLH
| – I
F
Input forward current IF (mA)
NOTE: The above charact eristics curves are present ed for reference only and not guaranteed by production test,
unless otherwise noted.
Propagation delay tim e, Puls e width distort i on
tpLH, tpHL, |tpHL – tpLH| (ns)
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Toshiba Electronic Devices & Storage Corporation
PRECAUTIONS OF SURFACE MOUNTING TYPE PHOTOCOUPLER SOLDERING &
GENERAL STORAGE
(1) Precautions for Soldering
When soldering, please prevent the temperature rise of this product as much as possible with in t he
following conditions for both soldering iron method and reflow method.
The following profile is indicated as the maximum value of the heat resistance of this product.
Depending on the type of solder paste to be used, please set the preheat temperature and
thermal temperature to optimized temperature within the profile.
1) When Using Soldering Reflow
An example of a temperature profile when lead(Pb)-free solder is used
The soldering temperature profile is based on the package surface temperature
(See the figure above.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being
2 weeks.
2) When using soldering Flow
Preheat the device at a temperature of 150 °C (package surface temperature) for 60 to 120
seconds.
Mounting condition of 260 °C within 10 seconds is recommended
Flow soldering must be performed once.
3) When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 °C or within 3
seconds not exceeding 350 °C
Heating by soldering iron must be done only once per lead
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Toshiba Electronic Devices & Storage Corporation
(2) Precautions for General Storage
1) Do not store devices at any place where they will be exposed to mois ture or direct sunlight.
2) When transportation or storage of devices, follow the cautions indicated on the carton box.
3) The storage area temperature should be kept within a temperature range of 5 ˚C
to 35 ˚C, and relative humidity should be maintained at between 45% and 75%.
4) Do not store devices in the presence of harmful (es pecially corrosive) gases, or in dusty cond itio ns.
5) Use storage areas where there is minimal temperature fluctuation. Because rapid temperature
changes can cause condensation to occur on stored devices, resulting in lead oxidation or corrosion,
as a result, the solderability of the leads will be degraded.
6) When repacking devices, use anti-static cont ain er s.
7) Do not apply any external force or load directly to devices while they are in storage.
8) If devices have been stored for more than two years, even though the above conditions have been
followed, it is recommended that solderability of them should be tested before they are used.
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Toshiba Electronic Devices & Storage Corporation
Specification for Embossed–Tape Packing (TPL)(TPR) for SO6 Coupler
1. Applicabl e Package
Package Product T y pe
SO6 Mini-flat coupler
2. Product Naming System
Type of package used for shipment is denoted by a symbol suffix after a product number. The method of
cl ass ificatio n is as below.
(Example)
3. Tape Di m ensi ons
3.1 Specification Classification Are as Shown in Table 1
Table 1 Tape Type Classification
Tape type Classification Quantity
(pcs / reel)
TPL L direction 3000
TPR R direction 3000
3.2 Orientation of Device in Relation to Direction of Tape Movement
Device orientation in the recesses is as shown in Figure 1.
Figure 1 Device Orientation
Direction of Tape
L direction R direc t i on
TLP155E (TPL,E)
Device name
Tape type
[[G]]/RoHS COMPATIBLE (Note)
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Toshiba Electronic Devices & Storage Corporation
3.3 Empty Device Recesses Are as Shown in Table 2.
Table 2 Empty Device Recesses
Standard Remarks
Occurrenc es of 2 or more
succ essive empt y device
recesses 0 device Within any given 40mm section of
tape, not including l eader and trailer
Single empty devic e
recesses 6 devices (m ax) per reel Not including leader and trailer
3.4 Start and End of Tape
The start of the tape has 50 or more empty holes. The end of tape has 50 or more empty holes and two empty turns
only for a cover tape.
3.5 Tape Specification
(1) Tape material: Plastic (protection against electrostatics)
(2) Dimensions: The tape dimensions are as shown in Figure 2 and Table 3.
Unit: mm
Figure 2 Tape Forms
Table 3 Tape Dimensions
Unit: mm
Unless otherwise s pecified: ±0.1
Symbol Dimension Remark
A 4.0 ―
B 7.6 ―
D 5.5 Center line of indented square hole and sprocket hole
E 1.75 Dist ance bet ween tape edge and hole center
F 8.0 Cumulative error (max) per 10 feed holes
G 4.0 Cumul ative error (max) per 10 feed holes
K0 2.6 Internal space
0.3 ± 0.05
2.95 ± 0.2
K0
G
F
φ1.6 ± 0.1
A
E
D
B
12.0 ± 0.3
φ
1.5
+0.1
−0
+0.1
-0.3
+0.1
-0.3
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3.6 Reel
(1) Material: Plastic
(2) Dimensions: The reel dimensions are as shown in Figure 3 and Table 4.
Figure 3 Reel Form
Table 4 Reel Dimensions
Unit: mm
Symbol Dimension
A Φ330 ±2
B Φ80 ±1
C Φ13 ±0.5
E 2.0 ±0.5
U 4.0 ±0.5
W1 13.5 ±0.5
W2 17.5 ±1.0
4. Packing
Packed in a s hipping carton.
5. Label Indication
The carton bears a label indicating the product number, the symbol representing classification of standard, the
quantity, the lot number and the Toshiba com pany name.
6. Ordering Method
When placing an order, please specify the product number, the tape type and the quantity as shown in the
following example.
(Example)
Note : Please contact your TOSHIBA s ales representative for detai ls as to environmental matters such as the RoHS
c ompatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on
the restriction of the use of certain hazardous sub stan ce s in elect ric al and ele ctron ic equ ip ment.
E
W1
W2
A
B
C
U
TLP155E (TPL,E) 3000 pcs
Device name
Tape type
Quantity (must be a multiple of 3000)
[[G]]/RoHS COMPATIBLE (Note)
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RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collecti vely ref erred t o as “TOSHIBA”.
Hardware, soft ware and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the informati on in this document and related Product without notic e.
• This document and any information herein may not be reproduced without pri or writt en permiss i on from TOSHIBA. Even with
TOSHIBA's written permission, reproduct i on is permiss i bl e only if reproduction is without alteration/omission.
• Though TOSHIBA works continually t o improve Product 's qual ity and reliabili ty, Product c an malfunction or fail. Cus tomers are
responsibl e for complyi ng with safety standards and for providing adequate designs and safeguards for their hardware, soft ware and
systems which minimi ze risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data l oss or corruption. B efore c ust om ers use the Product, create designs including the
Product, or incorporat e the Product into thei r own applicati ons, c ust om ers must also refer to and comply with (a) the latest versi ons of
all relevant TOSHIBA i nformation, including without limit ation, this document, the specif ications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semic onduct or Reliabi l ity Handbook" and (b) the
instruct i ons for the applicati on with which the Product will be used with or for. Cust omers are sol ely responsibl e for all as pects of their
own product design or applications, includi ng but not limit ed to (a) determini ng the appropriateness of the use of this Product in such
design or applications; (b) evaluat ing and determ i ni ng the applic abi lity of any information contained in this document, or in charts,
diagrams, programs, al gorithms , sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIB A ASSUMES NO LI ABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEI THE R INTENDE D NO R WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QU ALITY AND/OR RELIABILITY, AND/OR A MALFUNCTIO N O R FAILURE OF WHI CH
MAY C AUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SE RIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly st ated in this document, Unintended Us e i ncl udes, without
limitati on, equipm ent used in nuclear fac ili t i es, equipm ent used in the aerospace industry, lifesaving and/or life supporting medical
equipment, equipment us ed for automobi l es, trai ns, shi ps and other transportati on, t raffic signali ng equipment, equipment us ed to
control combustions or explosions, safety devices, elevators and escalat ors, and devices related to power plant. IF YOU USE
PRODUCT FOR UNINTE NDE D USE, TOSHI BA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representat i ve or contact us via our website.
• Do not disassemble, anal yze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated int o any products or systems whose manufact ure, us e, or sale is prohibited under any
applicable l aws or regulations.
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infringement of patents or any other intellect ual property ri ght s of thi rd parties t hat may result f rom the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• AB SENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AN D TO THE MAXIMUM EX TE NT AL L O WABLE BY LAW, TOSHIBA (1) ASSUMES NO LI ABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSE Q UENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCL UDING WITHOUT LIMITATION, L O SS OF PROFITS, LOSS OF OPPORTUNITI E S, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLI ED WARRANTIES AND CONDI TIO NS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDI TI ONS OF M E RCHANTABILI TY, FITNESS
FOR A PARTICULAR PURPOSE, ACCUR ACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium A rseni de) is used in Product. GaAs is harmf ul to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crus h, grind, dissolve chemically or otherwise expose GaAs in Product.
• Do not use or otherwise make available Product or related software or tec hnol ogy for any military purposes, i ncl udi ng without
limitati on, f or the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biologic al weapons or missile
technology products (m ass destruc tion weapons). Product and related software and technology may be control l ed under the
applicable export laws and regulat ions i ncludi ng, without limi tation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Adm i nistrat i on Regul ations. Export and re-export of P roduct or relat ed software or technol ogy are stric tly prohibi ted
except in complianc e with all applicable export laws and regulati ons.
• Please contact your TOSHIBA s ales representative for details as to environmental matters such as the RoHS compatibility of
Product. Please use P roduct in complianc e with all applicabl e laws and regulations that regulate the inclusion or use of controlled
substances, includi ng without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LI ABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLIC ABLE LAW S AND REGULATIONS.
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