Numerical Index 2N2230-2N2330 z|> MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS S/F = || REPLACE- | PAGE Py (El tN! Vee | Vee |= ee @ Ie Vogisan @ Ic B/ _ je TYPE = 3 MENT | NUMBER USE & J cB 15 2 {SAT} al hy 5 - lB =\= @ 25C | BS) C | (volts) | (volts) |S | (min) (max) 5) (volts) = 3 5/3 2N2230 S [N LPA 150W} C} 150 590 501 Vi 350 9.0A 3.5 9.0A} 100 E 4.0K] E 2N2231 Ss |[N LPA L50W] C] 150 100 100} V] 350 9.0A 3.5 9.0Aj 100 E 4.0K] E 2N2232 S {N LPA 150W, Cl 150 150 150) Vy 350 9.0A 3.5 9.0A} 100 E 4.0K] E 2N2233 S |N LPA 150W] C] 150 200 200) V} 350 9.0A 3.5 9.0A} 100 E 4.0K] E 2N2234 5S |N PHS 12.5W} C} 150 40 20} 0 15 60 100M} 0.25 100M 50M| T 2N2235 S|N PHS 12.5W} Cc] 150 40 20) 0 40] 125 100M] 0.25 LOOM LOOM] T 2N2236 S [N HSS 575M| Al 150 40 20, 0 15 60 100M) 0.25 100M 5OM! T 2N2237 S tN HSS 575M} A! 150 40 20} O 40} 125 100M] 0.25 LOOM 2N2238 GIP RFA G.3W!] Al 106 30 36} S 10 10M 25 E 400M] T 2N2239 8 |N | 2N3766 77-142 AFA 1.0W;] A] 156 60 50); R 301 200 200M 3.0 200M 2N2240 S |N HSA Q.6WL Af 200 25 201 O 40t 100 1,.0M 1.0 50M 50M) T 2N2241 S |N HSA 0.6W] A} 200 25 20] Of 100} 200 1.0M 1.0 50M 50M} T 2N2242 SIN 8-120 HSA 360M} A] 200 40 15] 0 40] 120 LOM 0.7 1G0M 250M} T 2N2243 S [N (2N2219 8-108 HSS O.8W] Af 200 120 80] 0 40! 120) O.15A] 0.35 0.15A 50M] T 2N2243A4 (S {N HSS 0.8W) A} 200 120 80; 0 40} 120) 0.154) 0.25 0,154 50M) T 2N2244 S |N | 2N835 8-54 AFA 0.5W] Al 200 20 20] O; 5,0 15 2.0% 0.2 1.0M 40 E 60M/ T 2N2245 S |N |2N835 8-54 AFA 0.5W] A} 200 20 20] 0 10 30 2.0% 0.2 1, 0M 80 E 60M{ T 2N2246 S |N | 2N835 8-54 AFA 0.5W) Al 200 20 20] O} 5.0 15 2.0% 0.2 1.CM 40 E 60M| T 2N2247 S |N |2N834 8-54 AFA 0.5Wr Al 200 45 45| OQ} 5.0 15 2.0% Q.2 L.om) 40 E 60M) T 2N2248 S |N |2N834 8-54 AFA 0.5W] A] 200 45 45{ 0 16 30 2.0% 0.2 1.0M 80 E 60M] T 2N2249 3S YN ]2N834 8-54 AFA Q.5W) Al 200 45 451 0 20 60 2.0% 0.2 1,OM] 150 E 60M) T 2N2250 S |N | 2N835 8-54 LNA G.5W] A] 200 25 20] Of 5.0 15 2.0% 0.2 1.0M 40 E 60M} T 2N2251 S [N (2N835 8-54 LNA 0.5W| At 200 25 20| 0 10 30 2.0% 0.2 1.0M 80 E 60M! T 2N2252 S [N |2N834 8-54 LNA 0.5Wy Af 200 25 20; 0 20 60 2.0% 0.2 1,0M| 150 E 60M; T 2N2253 S |N }2N834 8-54 LNA 0.5W] A! 200 45 50/ Of 5.0 15 2.0% 0.2 1. 0M 40 E 60M] T 2N2254 S |N [2N834 8-54 LNA 0.5W}] A} 200 45 50} oO 10 30 2.0% 0.2 1.0M 80 E 60M] T 2N2255 S |N |2N834 8-54 LNA O.5W] Al 200 45 50) 0 20 60 2.0% 0.2 L.OM} 150 E 60M) T 2N2256 Ss |N 8-122 HNS 300M] Aj 175 7.0 7,0) S$ 7 10M 2N2257 S [N 8-122 HNS 300M] Al 175 7.0 7.0] S 40 10M 2N2258 G TP 8-122 HNS 150M| A| 160 7.0 7.01 S 17 LOM 2N2259 G |P 8-122 HNS 150M, A{ 100 7.0 7.01 S 4a 10M 2N2260 thru Thyristors, see Table on Page 1-154 2N2262 2N2 266 G |P [(2N2145 7-78 PMS 50W1 J} 125 100 55 40{ 120 500M! 0.75 5.0A 200K{ T 2N2267 G |P {2N2145 7-78 PMS SOW] J] 125 120 55 40; 120 500M] 0.75 5.0A 200K] T G }P |2N2145 7-78 PMS 50W] J} 125 100 55 40] 120 500M] 0.75 5.0A 200K] T G |P 12N2145 7-78 PMS 50W] J] 125 120 55 40] 120 500M} 0.75 5.0A 200K] T S )N $2N2219 8-108 AFA 5.0W} Ci 200 60 45] 0 30 1,0M 0.9 150M 50 E Pp AFC 0.25w] A} 100 20 15, R 50] 160 35M 10K] E 5S IN HSs 360M| A] 200 40 20] R 80} 240 LOM 0.7 200M] 3.0 E GIP 9-27 RFA 100M} A] 100 25 15] 0 20] 150 1.0M S$ |P CHP 150M}, A} 146 25 25) 0 10 5.0M 6.0M] 7 8S |P CHP 150M} Af 140 25 25, 0 10 5.0M 6.0M} T |P CHP 150M| A] 140 15 10] 0 10 5.0M 6.0M; T 5 [P CHP 150M] A} 140 15 10] 0 10 5.0M 6.0M] T 2N2278 S$ |P CHP 15soMt Al 140 415 154 0 7.6M) T 2N2279 5 7P CHP 150M| Ay 140 15 15] 0 7.6M] T 2n2280 [8 |P cup | 150M] AJ 140f 10} 4.0] 0 0.1} 5.0m Tom] 2n2281 |S |P cHP |} 150M] A] 140] 10) 6.0] 0 0.1 | 5.0m 16M] T 2N2282 G YP HPA 5.0Ww} Cy} 110 60 30} 0 is 3.0A 0.4 1.04 40 E 20M} T 2N2283 G IP HPA 5.0W] Cc] 110 100 60] 0 15 3.0A 0.4 1.0A 40 E 20M} T 2N2.284 G [P HPA 5.0W] C} 110 200 100] 0 15 3.0A 0.4 1.04 40 E 20M; T 2N2285 G |P LPA 1locw; Cj} 110 60 30; 0 35] 140 10A] 0.65 25A 0,6M/ T 2N22.86 Ge LPA 1o0w) Cc} 110 100 60) 0 35} 140 LOA] 0.65 258 0.6m} T 2N2287 G IP LPA LooWw}] Cc] 110 120 80] 0 35| 140 10A} 0.65 254 0.6M] T 2N2288 G |P {2N2526 7-87 LPA 60W}) C} 110 40 40] R 20 60 5.0A 1.0 5.0A 25 E] O.45My T 2N2289 G |P [2N2526 7-87 LPA 60Ww}] Cl 110 80 801 R 20 60 5.0A 1.0 5.04 25 E|] 0.45M| T 2N2290 G {P |2N2526 7-87 LPA 6OW| Cl LLO 120 120) R 20 690 5.0A 1.0 5.04 25 E) 0.45M) T 2N2291 G IP LPA 60W}] C] 110 40 30] 0 50} 120 5.04 1.0 5.0A 50 E}O.45M} T 2N2292 G |P LPA 60W} C} 110 80 70; 0 50] 120 5.0A 1.0 5.0A 50 E|] 0.45Mj T 2N2293 G IP LPA 60W}] C] 110 120 70| 0 50] 120 5.0A 1.0 5.0A 50 E] 0.45M|[ T 282294 G TP PMS 7OW}] C}] 110 40 30| 0 50} 120 5.0A 1.0 5.0A 50 E| 0.45M[ T 2N2295 GP PMS 7OW, C{ 110 80 50; 0 50] 120 5.04 1.0 5.0A 50 E] 0.45M] T 2N2296 G IP PMS 7OwW} C} 110 120 7O} O 50} 120 5.0A 1.9 5.0A 50 E{ 0.45M] fT 2N2297 S [N [2N3252 8-214 RFA 800M] A} 200 80 35] 0 40; 120 150M 0.2 150M 60M| T 2N2303 S }P J2N2801 8-161 RFA 600M) A} 175 50 50) RK 739) 200 150M 1.5 150M 75 E 60M{ T 2N2304 S JN |[2N3766 7-142 LPA 25w} Cf 200 60 60] V 20 80 300M 0.9 300M 2N2305 S iN LPA 75W| C] 200 60 60] V 15 60 800M 1.2 600M 2N2306 S IN PHS i3w] C] 175 75 50] 0 12 75} 0.35A 2.0 1.0A 175M{ T 2N2307 Unijunetion Transistor, see Table on Page 1-174 2N2308 s|N PA 25w{ Cf 200 100 80] 0 20 60 1.0A 1.0 1.0A 15 E 30K 2N2309 S {N LNA 600M; A} zO0 30 30] 0 25] 125 0.2M 40 E 2N2310 S |N AFA 350M} Aj 200 60 60} O 12 36 200M 5.0 200M QN2341 Ss 4N AFA 350M) A} 200 100 100) 0 12 36 200M 5.0 200M 2N2312 S {N AFA 350M; A] 200 60 60] 0 30 90 200M 5.0 200M 2N2313 S |N AFA 350M] A] 200 100 100; 0 30 90 200M 5.0 200M 2N2314 S |N AFA 350M} Aj 200 60 40] R 20 60 150M 5.0 150M 15 E 40M| T 2N2315 S JN AFA 350M} A} 200 60 40) R 4a} 120 150M Ls 150M 25 E 50M) T 2N2316 S [N AFA 350M; AJ] 200 120 80] R 40] 120 150M 5.0 150M 50 E 50M] T 2N2317 S JN AFA 350M} AJ] 200 75 50, R 40] 120 150M 1.5 150M 30 E 60M] T 2N2318 S |N |[2N834 -54 HSA 360M| Al 200 30 25) 8 15 O.1M] 0.35 20M 300M} T 2N2319 S |N 12N834 8-54 HSA 300M{ Al 200 30 254 5 15 O.1M! 0.35 20M 300M) T ono S |N [2N834 8-54 HSA 600M] A| 200 30 25, S 15 O.1M] 0.35 20M. 300M} T 2N2322 thru Thyristors, sce Table on Page 1-154 2N2329 2n2330 fs |N | [8-125 | cHP | 0.sw] a] 150 30 20] o] 50 10M 100M] T 1-127 Switching and General Purpose Transistors 2N2256, 2n2257 (siicon) Vero= 7 V lc = 100mA 2n2258 (GERMANIUM) f, = 320MHz 2N2259 (GERMANIUM) NPN silicon and PNP germanium mesa complemen- tary transistors for high-speed non- saturated switching applications. CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS : 2N2256 2N2258 : Collector-Emitter Voltage VoEo 7 7 Vde Collector-Base Voltage Vop 7 7 Vde Emitter-Base Voltage Vas 1 1 Vdc Collector Current-Continuous io 100 100 mAdc Total Device Dissipation @ T, = 25C Py 300 150 mW Derate above 25C 2 2 mw/c Total Device Dissipation @ T c* 25C Ph 1000 300 mW Derate above 25C 6. 67 4 mw/c Operating and Storage Junction 0 Temperature Range Ty; T ste ~65 to +175 -65 to +100 Cc TRANSISTOR SELECTION CHART hee @ Ig = 25 mA TYPE 20 40 2N2256 X 2N2257 2N2258 2N2259 8-122Switching and General Purpose Transistors 2N2256 thru 2N2259 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol} Min | Typ | Max} Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage BVors Vdc (Ig = 100 Adc, Vor = 0) 7 15 - Collector-Base Breakdown Voltage BVopo Vde (Ig = 100 wAdc, LL = 0) 7 15 - Emitter -Base Breakdown Voltage BV BO Vde (I, = 100 pAdc, To = 0) 1 - - Collector Cutoff Current lapo pAde Vor = 6 Vdc, lL = 0) - 3 10 (Von = 6 Vdc, 1, = 0, T, = 65C) - 30 | 100 ON CHARACTERISTICS DC Current Gain hop - (Ig = 10 mAdc, Vor = 1 Vdc) 2N2256, 2N2258 17 30 - 2N2257, 2N2259 40 50 - (Ig = 25 mAdc, Vor = 1 Vdc) 2N2256, 2N2258 20 35 - 2N2257, 2N2259 40 55 - Base-Emitter On Voltage VEE on) Vde Mla = 10 mAdc, Vor = 1 Vdc) 2N2256, 2N2257 - 0.70 | 0.8 2N2258, 2N2259 - 0.35 | 0.5 (Ig = 25 mAdc, Vor = 1 Vdc) 2N2256, 2N2257 - 0.8 0.9 2N2258, 2N2259 - 0. 45 0.6 Conduction Threshold Base-Emitter Voltage* Vip Vde lo = 200 pAdc, Vor = 1 Vde) 2N2256, 2N2257 0.5 - - 2N2258, 2N2259 0.1 - - DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product fp MHz (Ig =10 mAdc, Vop = 1Vdc,f = 100 MHz) 2N2258, 2N2259 250 320 - 1, =10 mAdc, V,,,, = 15 Vde,f = 100 MHz) 2N2256, 2N2257 250 320 - Cc > "CE Output Capacitance Cop pF Vop = 5 Vdc, Li = 0, f= 4 MHz) 2N2256, 2N2257 - 4 5 2N2258, 2N2259 - 4 8 Base Resistance ry Ohms (ly = 5 mAdc, Vop = 2 Vdc, f = 300 MHz) 2N2256, 2N2257 - 50 100 2N2258, 2N2259 - 15 125 Turn-On Time ton ns 2N2256, 2N2257 - 3 7 See Fig. 1 2N2258, 2N2259 ~ 4 8 See Fig. 2 Turn-Off Time tore ns 2N2256 , 2N2257 - 4 7 See Fig. 1 2N2258, 2N2259 - 3 7 See Fig. 2 *Base-to-emitter forward bias voltage at which transistor will be at the threshold of conduction; i.e. that base-to-emitter voltage at which the collector current is less than or equal to the specified amount under a given collector-to-emitter voltage condition. 8-123 Switching and General Purpose Transistors 2N2256 thru 2N2259 (continued) FIGURE 1 NPN SWITCHING TIME TEST CIRCUIT titi NS R, = 509 < OSCILLOSCOPE ov 1009 {t, < 0.7 NS) -wLJ~ crouno $2 K iS PLANES ; son GROUND PLANE 3-1500 RESISTORS iNSI6 _w IN CONFIGURATION PNP-2N2258 NPN-2N2256 FIGURE 5 CURRENT GAIN CHARACTERISTICS Vo = WV 25C < T, < 65C UNLESS NOTED 2N2256 2N2258 Nee, CURRENT GAIN "TYPICAL CURVE @ 25C 10 65C = = = TYPICAL CURVE @ 0 LIMIT CURVE 10 20 30 40 50 te, COLLECTOR CURRENT (maj fr, GAIN BANDWIDTH PRODUCT (MHz} FIGURE 2 - PNP SWITCHING TIME TEST CIRCUIT 3 tat) << P NSEC R, = 502 +24 wt L OSCILLOSCOPE (t << 0.7 NS) GROUND PLANE 1N916 3-1500 RESISTORS IN ACY CONFIGURATION +4+22V FIGURE 4 CURRENT MODE INVERTER FOR USE WITH DIODE LOGIC PROPAGATION DELAY TIME 10 ns INVERTER gv 1-3 ~@ AND OR" GATES } ~ { | 1 4 | | | R yo TRANSITRON $30656 FIGURE 6 GAIN-BANDWITH PROBUCT CHARACTERISTICS 500 | ~ TYPICAL CURVE 400 | LIMIT CURVE __ eee TTT Tee - 300 }- fae ~4 = a 250 fe - mf =: a a IA 150 en PY 100 7 10 1520 35 50 fe, COLLECTOR CURRENT (mA) 2N2303 (SILICON) For Specifications, See 2N722 Data Sheet 8-124