TGA2521-SM 17-24 GHz Linear Driver Amplifier Key Features * * * * * * Frequency Range: 17-24 GHz 25.5 dBm Nominal Psat, 23.5 dBm Nominal P1dB Gain: 20 dB OTOI: 33 dBm Typical Bias: Vd = 5 V, Idq = 320 mA, Vg = -0.5 V Typical Package Dimensions: 4 x 4 x 0.85 mm Measured Performance Primary Applications * * 25 30 20 15 S21 S11 S22 15 0 10 -15 5 -30 17 18 19 20 21 22 23 24 Freq (GHz) Pout (dBm) or OTOI (dBm) 40 S11 and S22 (dB) S21 (dB) Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical Point-to-Point Radio Point-to-Multipoint Communications Product Description The TriQuint TGA2521-SM is a three stage HPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process. The TGA2521-SM is designed to support a variety of millimeter wave applications including point-to-point digital radio and other K band linear gain applications. The TGA2521-SM provides 23.5 dBm nominal output power at 1dB compression across 1724GHz. Typical small signal gain is 20 dB at 17GHz and 20dB at 23GHz. The TGA2521-SM requires minimum off-chip components. Each device is DC and RF tested for key parameters. The device is available in a 4x4mm plastic QFN package. 35 30 Lead-free and RoHS compliant. 25 P1dB (dBm) Psat (dBm) Output TOI (dBm) 20 15 17 18 19 20 21 22 23 24 Freq (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Parameter TGA2521-SM Value Notes Drain to Gate Voltage 11 V Vd1, Vd2 Drain Voltage 8V Vg1, Vg2 Gate Voltage Range -5 to 0 V Id1 Drain Current 115 mA 2/ Id2 Drain Current 407 mA 2/ Ig1 Gate Current Range 8 mA Ig2 Gate Current Range 34 mA Pin Input Continuous Wave Power 23 dBm Channel Temperature 200 C Tchannel 2/ 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Value Vd1, Vd2 Drain Voltage 5V Id1+Id2 Drain Current 320 mA Id_Drive Drain Current under RF Drive TBD mA Vg1 Vg2 1/ Parameter 1/ Gate #1 Voltage Gate #2 Voltage -0.5 V -0.5 V See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Table III RF Characterization Table Bias: Vd = 5 V, Id = 320 mA, Vg = -0.5 V, typical SYMBOL PARAMETER TEST CONDITIONS MIN NOM MAX UNITS 18.5 20 23.5 dB Gain Small Signal Gain f = 17.7 - 23.6 GHz IRL Input Return Loss f = 17.7 - 23.6 GHz 14 dB ORL Output Return Loss f = 17.7 - 23.6 GHz 12 dB Psat Saturated Output Power 1/ f = 17.7 - 23.6 GHz 23 25.5 dBm P1dB Output Power @ 1dB Compression 1/ f = 17.7 - 23.6 GHz 21 23.5 dBm TOI Output TOI f = 17.7 - 23.6 GHz 30 33 dBm NF Noise Figure f = 17.7 - 23.6 GHz 5 Gain Temperature Coefficient f = 17.7 - 23.6 GHz -0.04 dB/C Power Temperature Coefficient f = 17.7 - 23.6 GHz -0.01 dB/C 7 dB 1/ Psat and P1dB measurements performed with Vg held constant. Drain current increases under RF drive. 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Notes Tbaseplate = 85 C Pd = 3.9 W Tchannel = 200 C 1/ 2/ Thermal Resistance, jc Vd = 5 V Id = 320 mA Pd = 1.6 W jc = 29.5 C/W Tchannel = 127 C Tm = 7.7E+6 Hrs Thermal Resistance, jc Under RF Drive Vd = 5 V Id = TBD mA Pout = TBD dBm Pd = TBD W jc = TBD C/W Tchannel = TBD C Tm = TBD Hrs Mounting Temperature 30 Seconds Maximum Power Dissipation 320 C Storage Temperature 1/ -65 to 150 C For a median life of 1E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc. Channel operating temperature will directly affect the device lifetime. For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Median Lifetime (Tm) vs. Channel Temperature 1.E+13 1.E+12 Median Lifetime (Hours) 2/ 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 FET3 25 50 75 100 125 150 175 200 Channel Temperature ( C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Measured Data 25 30 20 15 S21 S11 S22 15 0 10 -15 5 -30 10 15 20 25 S11 and S22 (dB) S21 (dB) Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical 30 Freq (GHz) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Measured Data Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical 25 S21 (dB) 20 15 S21 at -20 deg C S21 at +25 deg C 10 S21 at +80 deg C 5 10 15 20 25 30 Freq (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Measured Data Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical 0 S11 at -20 deg C -5 S11 at +25 deg C S11 (dB) S11 at +80 deg C -10 -15 -20 -25 -30 10 15 20 25 30 25 30 Freq (GHz) 0 S22 at -20 deg C -5 S22 at +25 deg C S22 (dB) S22 at +80 deg C -10 -15 -20 -25 -30 10 15 20 Freq (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Measured Data Bias conditions: Vd = 5 V, Idq = 320 mA, Vg = -0.5 V (Vg held constant from small signal to Psat) 27 26 Pout (dBm) 25 24 23 22 21 20 P1dB (dBm) 19 Psat dB (dBm) 18 17 14 15 16 17 18 19 20 21 22 23 24 25 26 Freq (GHz) Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V (Id held constant from small signal to Psat) 27 26 Pout (dBm) 25 24 23 22 21 20 P1dB (dBm) 19 Psat (dBm) 18 17 16 17 18 19 20 21 22 23 24 25 Freq (GHz) 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Measured Data Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical (Id held constant from small signal to Psat) 27 26 Pout (dBm) 25 24 23 22 21 Pout at -20 deg C 20 Pout at +25 deg C 19 Pout at +80 deg C 18 17 16 17 18 19 20 21 22 23 24 25 Freq (GHz) 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Measured Data Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical Output TOI (dBm) 35 34 33 32 31 30 16 17 18 19 20 21 22 23 24 25 Freq (GHz) 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F Measured Data TGA2521-SM Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical Noise Figure (dB) 10 8 6 4 2 0 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Freq (GHz) Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical Noise Figure (dB) 10 9 NF at -20 deg C 8 NF at +25 deg C 7 NF at +80 deg C 6 5 4 3 2 1 0 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Freq (GHz) 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Package Pinout PIN 1 DOT BY MARKING PIN #1 IDENTIFICATION 16 15 14 13 13 1 12 12 2 11 11 15 14 16 1 2 17 3 10 10 3 4 9 9 4 8 5 6 7 7 6 5 8 BOTTOM VIEW TOP VIEW SIDE VIEW Pin Symbol Description 3 RF In 11 RF Out 16 Vg1 Gate voltage for amplifier's input stage. 1/ 14 Vg2 Gate voltage for amplifier's 2nd and final stages. 1/ 6,15 Vd1 (bot), Vd1 (top) Drain voltage for amplifier's input stage. Must be biased from both sides. 1/ 7,13 Vd2 (bot), Vd2 (top) Drain voltage for amplifier's 2nd and final stages. Must be biased from both sides. 1/ 1,2,4,9,10,12 NC No internal connection. Must be grounded to the PCB. See `Recommended Land Pattern'. 5 GND 8 Vt 17 GND Input, matched to 50 ohms. Output, matched to 50 ohms. Connected to 17 internally. Can be grounded or left open on the PCB. Can be grounded or left open on the PCB. Not used. Backside paddle. Multiple vias on the PCB should be employed to minimize inductance and thermal resistance. See `Recommended Land Pattern'. 1/ Bias network required. See `Recommended Application Circuit' . 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Electrical Schematic Vg1 (Pin 16) Vd1 Vg2 Vd2 (Pin 15) (Pin 14) (Pin 13) RF IN (Pin 3) RF OUT (Pin 11) GND Vd1 Vd2 (Pin 17) (Pin 6) (Pin 7) Bias Procedures Bias-up Procedure Bias-down Procedure Vg1, Vg2 set to -1.5 V Turn off RF supply Vd1, Vd2 set to +5 V Reduce Vg1, Vg2 to -1.5V. Ensure Id ~ 0 mA Adjust Vg1, Vg2 more positive until Id is 320 mA. This will be ~ Vg = -0.5 V Turn Vd1, Vd2 to 0 V Apply RF signal to input Turn Vg1, Vg2 to 0 V 13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Mechanical Drawing Units: millimeters Thickness: 0.85 Pkg x,y size tolerance: +/- 0.050 Package edge to bond pad dimensions are shown to center of pad GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Recommended Application Circuit Vd1 C1 C7 C10 C4 C2 C8 C11 C5 Vg2 Vd2 Vg1 16 15 14 13 U1 RF IN J1 3 Z0 = 50 11 RF OUT Z0 = 50 GND 17 J2 7 6 Vd2 Vd1 C3 C9 C12 C6 Ref Designator Value Description U1 -- TriQuint TGA2521-SM C1 C2 C3 C4 C5 C6 1.0 mF 1206 SMT Ceramic Capacitor C7 C8 C9 C10 C11 C12 0.01 mF 0603 SMT Ceramic Capacitor J1, J2 1092-01A-5 Southwest Microwave End Launch Connector GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Recommended Assembly Diagram Vg1 and Vg2 C1 C2 C4 C5 C8 C11 C7 U1 C10 J2 J1 RF IN Z = 50 RF OUT Z = 50 C12 C9 C3 Vd1 (top) Vd1 (bot) Vd2 (top) Vd2 (bot) C6 Board Material: 10 mil thick Rogers 4350 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 16 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Recommended Land Pattern Vg1 Vd1 Vg2 Vd2 RF OUT RF IN NC Vd1 Vd2 NC Board Material: 10 mil thick Rogers 4350 Open Plated Vias in Center of Land pattern; Vias are 12 mil Diameter, 20 mil center-to-center spacing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 17 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F TGA2521-SM Assembly Notes Recommended Surface Mount Package Assembly * Proper ESD precautions must be followed while handling packages. * Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. * TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. * Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. * Clean the assembly with alcohol. Reflow Profile SnPb Pb Free Ramp-up Rate 3 C/sec 3 C/sec Activation Time and Temperature 60 - 120 sec @ 140 - 160 C 60 - 180 sec @ 150 - 200 C Time above Melting Point 60 - 150 sec 60 - 150 sec Max Peak Temperature 240 C 260 C Time within 5 C of Peak Temperature 10 - 20 sec 10 - 20 sec Ramp-down Rate 4 - 6 C/sec 4 - 6 C/sec Ordering Information Part Package Style TGA2521-SM, TAPE AND REEL 4mm x 4mm QFN Surface Mount, TAPE AND REEL GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 18 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2014 (c) Rev F