1
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Datasheet subject to change without notice.
Primary Applications
Product Description
Key Features
Measured Performance
17-24 GHz Linear Driver Amplifier
•Frequency Range: 17-24 GHz
•25.5 dBm Nominal Psat, 23.5 dBm Nominal
P1dB
•Gain: 20 dB
•OTOI: 33 dBm Typical
•Bias: Vd = 5 V, Idq = 320 mA, Vg = -0.5 V
Typical
•Package Dimensions: 4 x 4 x 0.85 mm
•Point-to-Point Radio
•Point-to-Multipoint Communications
The TriQuint TGA2521-SM is a three stage HPA
MMIC design using TriQuint’s proven 0.25 um
Power pHEMT process. The TGA2521-SM is
designed to support a variety of millimeter wave
applications including point-to-point digital radio
and other K band linear gain applications.
The TGA2521-SM provides 23.5 dBm nominal
output power at 1dB compression across 17-
24GHz. Typical small signal gain is 20 dB at
17GHz and 20dB at 23GHz.
The TGA2521-SM requires minimum off-chip
components. Each device is DC and RF tested for
key parameters. The device is available in a
4x4mm plastic QFN package.
Lead-free and RoHS compliant.
Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical
5
10
15
20
25
17 18 19 20 21 22 23 24
Freq (GHz)
S21 (dB)
-30
-15
0
15
30
S11 and S22 (dB)
S21
S11
S22
15
20
25
30
35
40
17 18 19 20 21 22 23 24
Freq (GHz)
Pout (dBm) or OTOI (dBm)
2
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table II
Recommended Operating Conditions
Table I
Absolute Maximum Ratings 1/
Symbol Parameter Value Notes
Vd-Vg Drain to Gate Voltage 11 V
Vd1, Vd2 Drain Voltage 8 V 2/
Vg1, Vg2 Gate Voltage Range -5 to 0 V
Id1 Drain Current 115 mA 2/
Id2 Drain Current 407 mA 2/
Ig1 Gate Current Range 8 mA
Ig2 Gate Current Range 34 mA
Pin Input Continuous Wave Power 23 dBm 2/
Tchannel Channel Temperature 200 °C
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
Symbol Parameter 1/ Value
Vd1, Vd2 Drain Voltage 5 V
Id1+Id2 Drain Current 320 mA
Id_Drive Drain Current under RF Drive TBD mA
Vg1
Vg2 Gate #1 Voltage
Gate #2 Voltage -0.5 V
-0.5 V
1/ See assembly diagram for bias instructions.
3
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table III
RF Characterization Table
SYMBOL PARAMETER TEST
CONDITIONS MIN NOM MAX UNITS
Gain Small Signal Gain f = 17.7 – 23.6 GHz 18.5 20 23.5 dB
IRL Input Return Loss f = 17.7 – 23.6 GHz 14 dB
ORL Output Return Loss f = 17.7 – 23.6 GHz 12 dB
Psat Saturated Output
Power 1/ f = 17.7 – 23.6 GHz 23 25.5 dBm
P1dB Output Power @
1dB Compression 1/ f = 17.7 – 23.6 GHz 21 23.5 dBm
TOI Output TOI f = 17.7 – 23.6 GHz 30 33 dBm
NF Noise Figure f = 17.7 – 23.6 GHz 5 7 dB
Gain Temperature
Coefficient f = 17.7 – 23.6 GHz -0.04 dB/°C
Power Temperature
Coefficient f = 17.7 – 23.6 GHz -0.01 dB/°C
Bias: Vd = 5 V, Id = 320 mA, Vg = -0.5 V, typical
1/ Psat and P1dB measurements performed with Vg held constant. Drain current
increases under RF drive.
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TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table IV
Power Dissipation and Thermal Properties
Parameter Test Conditions Value Notes
Maximum Power Dissipation Tbaseplate = 85 °C Pd = 3.9 W
Tchannel = 200 °C 1/ 2/
Thermal Resistance, θjc Vd = 5 V
Id = 320 mA
Pd = 1.6 W
θjc = 29.5 °C/W
Tchannel = 127 °C
Tm = 7.7E+6 Hrs
Thermal Resistance, θjc
Under RF Drive Vd = 5 V
Id = TBD mA
Pout = TBD dBm
Pd = TBD W
θjc = TBD °C/W
Tchannel = TBD °C
Tm = TBD Hrs
Mounting Temperature 30 Seconds 320 °C
Storage Temperature -65 to 150 °C
1/ For a median life of 1E+6 hours, Power Dissipation is limited to
Pd(max) = (150 °C – Tbase °C)/θjc.
2/ Channel operating temperature will directly affect the device lifetime. For maximum life, it is
recommended that channel temperatures be maintained at the lowest possible levels.
Median Lifetime (Tm) vs. Channel Temperature
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
25 50 75 100 125 150 175 200
Channel Temperature ( C)
Median Lifetime (Hours)
FET3
°
5
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data Measured Data
Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical
5
10
15
20
25
10 15 20 25 30
Freq (GHz)
S21 (dB)
-30
-15
0
15
30
S11 and S22 (dB)
S21
S11
S22
6
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data Measured Data
Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical
5
10
15
20
25
10 15 20 25 30
Freq (GHz)
S21 (dB)
S21 at -20 deg C
S21 at +25 deg C
S21 at +80 deg C
7
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data Measured Data
Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical
-30
-25
-20
-15
-10
-5
0
10 15 20 25 30
Freq (GHz)
S11 (dB)
S11 at -20 deg C
S11 at +25 deg C
S11 at +80 deg C
-30
-25
-20
-15
-10
-5
0
10 15 20 25 30
Freq (GHz)
S22 (dB)
S22 at -20 deg C
S22 at +25 deg C
S22 at +80 deg C
8
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data Measured Data
Bias conditions: Vd = 5 V, Idq = 320 mA, Vg = -0.5 V (Vg held constant from small
signal to Psat)
Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V (Id held constant from small
signal to Psat)
17
18
19
20
21
22
23
24
25
26
27
14 15 16 17 18 19 20 21 22 23 24 25 26
Freq (GHz)
Pout (dBm)
P1dB (dBm)
Psat dB (dBm)
17
18
19
20
21
22
23
24
25
26
27
16 17 18 19 20 21 22 23 24 25
Freq (GHz)
Pout (dBm)
P1dB (dBm)
Psat (dBm)
9
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data Measured Data
Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical (Id held constant from
small signal to Psat)
17
18
19
20
21
22
23
24
25
26
27
16 17 18 19 20 21 22 23 24 25
Freq (GHz)
Pout (dBm)
Pout at -20 deg C
Pout at +25 deg C
Pout at +80 deg C
10
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data Measured Data
Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical
30
31
32
33
34
35
16 17 18 19 20 21 22 23 24 25
Freq (GHz)
Output TOI (dBm)
11
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data Measured Data
Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical
Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical
0
1
2
3
4
5
6
7
8
9
10
14 15 16 17 18 19 20 21 22 23 24 25 26 27
Freq (GHz)
Noise Figure (dB)
NF at -20 deg C
NF at +25 deg C
NF at +80 deg C
0
2
4
6
8
10
14 15 16 17 18 19 20 21 22 23 24 25 26 27
Freq (GHz)
Noise Figure (dB)
12
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Package Pinout
Pin Symbol Description
3 RF In Input, matched to 50 ohms.
11 RF Out Output, matched to 50 ohms.
16 Vg1 Gate voltage for amplifier’s input stage. 1/
14 Vg2 Gate voltage for amplifier’s 2nd and final stages. 1/
6,15 Vd1 (bot), Vd1 (top) Drain voltage for amplifier’s input stage. Must be
biased from both sides. 1/
7,13 Vd2 (bot), Vd2 (top) Drain voltage for amplifier’s 2nd and final stages.
Must be biased from both sides. 1/
1,2,4,9,10,12 NC No internal connection. Must be grounded to the
PCB. See ‘Recommended Land Pattern’.
5 GND Connected to 17 internally. Can be grounded or left
open on the PCB.
8 Vt Can be grounded or left open on the PCB. Not
used.
17 GND Backside paddle. Multiple vias on the PCB should
be employed to minimize inductance and thermal
resistance. See ‘Recommended Land Pattern’.
PIN 1 DOT
BY MARKING
TOP VIEW
PIN #1 IDENTIFICATION
BOTTOM VIEW
SIDE VIEW
15
6
9
10
11
87
12
13 14
5
4
3
2
16
11
2
3
4
68
7
5
11
10
9
12
15 13
14
16
17
1/ Bias network required. See ‘Recommended Application Circuit’ .
13
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Vd2
(Pin 7)
Vg2
(Pin 14)
Vd1
(Pin 6)
Vd1
(Pin 15)
Vg1
(Pin 16)
RF OUT
(Pin 11)
Vd2
(Pin 13)
RF IN
(Pin 3)
GND
(Pin 17)
Electrical Schematic
Bias Procedures
Bias-up Procedure
Bias-down Procedure
Vg1, Vg2 set to -1.5 V
Turn off RF supply
Vd1, Vd2 set to +5 V
Reduce Vg1, Vg2 to -1.5V. Ensure Id
~ 0 mA
Adjust Vg1, Vg2 more positive until Id is 320
mA. This will be ~ Vg = -0.5 V
Turn Vd1, Vd2 to 0 V
Apply RF signal to input Turn Vg1, Vg2 to 0 V
14
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Mechanical Drawing
Units: millimeters
Thickness: 0.85
Pkg x,y size tolerance: +/- 0.050
Package edge to bond pad dimensions are shown to center of pad
15
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Application Circuit
Ref Designator Value Description
U1 -- TriQuint TGA2521-SM
C1 C2 C3 C4 C5 C6 1.0 mF 1206 SMT Ceramic Capacitor
C7 C8 C9 C10 C11 C12 0.01 mF 0603 SMT Ceramic Capacitor
J1, J2 1092-01A-5 Southwest Microwave End Launch Connector
C8
C2
C1 C7 C10
C5
C4
C3 C9 C6
C11
C12
Vg1
Vg2
Vd1
Vd2
Vd1 Vd2
Z = 50
0
RF IN
RF OUT
Z = 50
0
16 15 14 13
3
67
11
GND 17
U1
J2
J1
16
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Assembly Diagram
Board Material: 10 mil thick Rogers 4350
C3
C9
RF IN
Z = 50
C8
C2
C1
C10
C4
C11
C5
U1
J1 J2
Vd1 (top) Vd1 (bot)
Vd2 (top) Vd2 (bot)
Vg1 and Vg2
C6
RF OUT
Z = 50
C12
C7
17
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Land Pattern
Board Material: 10 mil thick Rogers 4350
Open Plated Vias in Center of Land pattern; Vias are 12 mil Diameter, 20 mil center-to-center spacing
RF OUT
RF IN
Vd1 Vd2
Vd1
Vg1 Vg2 Vd2
NC
NC
18
TGA2521-SM
Nov 2014 © Rev F
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Assembly Notes
Ordering Information
Recommended Surface Mount Package Assembly
•Proper ESD precautions must be followed while handling packages.
•Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
•TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow
oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles
are listed in the table below.
•Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot
placement. The volume of solder paste depends on PCB and component layout and should be well
controlled to ensure consistent mechanical and electrical performance.
•Clean the assembly with alcohol.
Reflow Profile SnPb Pb Free
Ramp-up Rate 3 C/sec 3 C/sec
Activation Time and Temperature 60 – 120 sec @ 140 – 160 C 60 – 180 sec @ 150 – 200 C
Time above Melting Point 60 – 150 sec 60 – 150 sec
Max Peak Temperature 240 C 260 C
Time within 5 C of Peak Temperature 10 – 20 sec 10 – 20 sec
Ramp-down Rate 4 – 6 C/sec 4 – 6 C/sec
Part Package Style
TGA2521-SM, TAPE AND REEL 4mm x 4mm QFN Surface Mount, TAPE AND REEL