AP01N60H/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated Fast Switching BVDSS 600V RDS(ON) 8 ID 1.6A G Simple Drive Requirement RoHS Compliant S Description G The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 1.6 A ID@TC=100 Continuous Drain Current, V GS @ 10V 1 A 6 A 39 W 0.31 W/ 13 mJ 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current 1.6 A EAR Repetitive Avalanche Energy 0.5 mJ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 3.2 /W Rthj-a Thermal Resistance Junction-ambient Max. 110 /W Data & specifications subject to change without notice 200705052-1/4 AP01N60H/J o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=1mA Min. Typ. Max. Units 600 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.6 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.8A - 7.2 8 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=50V, ID=0.8A - 0.8 - S VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=30V - - 100 nA ID=1.6A - 7.7 - nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 2.6 - nC 3 td(on) Turn-on Delay Time VDD=300V - 8 - ns tr Rise Time ID=1.6A - 5 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 14 - ns tf Fall Time RD=187.5 - 7 - ns Ciss Input Capacitance VGS=0V - 286 - pF Coss Output Capacitance VDS=25V - 25 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5 - pF Min. Typ. - - 1.6 A - - 6 A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.5V Continuous Source Current ( Body Diode ) 1 Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=1.6A, VGS=0V Max. Units Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25 , IAS=1.6A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP01N60H/J 0.9 1.5 10V 6.0V 5.5V ID , Drain Current (A) 1 5.0V 0.5 10V 6.0V 5.5V T C =150 o C ID , Drain Current (A) o T C =25 C 0.6 5.0V 0.3 V G = 4.5 V V G = 4.5 V 0 0 0 5 10 15 0 20 10 15 20 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 I D =0.8A V G =10V Normalized RDS(ON) 1.1 Normalized BVDSS (V) 5 V DS , Drain-to-Source Voltage (V) 1 2 1 0.9 0.8 0 -50 0 50 100 -50 150 o 0 50 100 150 T j , Junction Temperature ( o C ) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 5 100 T j = 150 o C VGS(th) (V) IS (A) 4 10 T j = 25 o C 3 1 2 1 0.1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP01N60H/J f=1.0MHz 1000 I D =1.6A V DS =480V 12 C iss 100 C (pF) VGS , Gate to Source Voltage (V) 16 8 C oss 10 C rss 4 1 0 0 2 4 6 8 1 10 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 Normalized Thermal Response (Rthjc) 1 10us 1 ID (A) 100us 1ms 10ms 0.1 100ms T c =25 o C Single Pulse 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 10000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4