Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Dynamic dv/dt Rating BVDSS 600V
▼ Repetitive Avalanche Rated RDS(ON) 8Ω
▼ Fast Switching ID1.6A
▼ Simple Drive Requirement
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
EAR Repetitive Avalanche Energy mJ
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.2 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data & specifications subject to change without notice 200705052-1/4
-55 to 150
Storage Temperature Range -55 to 150
Parameter
Parameter Rating
600
AP01N60H/J
13
0.31
1.6
1
Pb Free Plating Product
6
39
1.6
±30
0.5
Linear Derating Factor
G
D
S
GDSTO-251(J)
GDSTO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP01N60J) is available for low-profile
applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.8A - 7.2 8 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=50V, ID=0.8A - 0.8 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±30V - - ±100 nA
QgTotal Gate Charge3ID=1.6A - 7.7 - nC
Qgs Gate-Source Charge VDS=480V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 2.6 - nC
td(on) Turn-on Delay Time3VDD=300V - 8 - ns
trRise Time ID=1.6A - 5 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 14 - ns
tfFall Time RD=187.5Ω-7-
ns
Ciss Input Capacitance VGS=0V - 286 - pF
Coss Output Capacitance VDS=25V - 25 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 5 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 1.6 A
ISM Pulsed Source Current ( Body Diode )1--6
A
VSD Forward On Voltage3Tj=25℃, IS=1.6A, VGS=0V - - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP01N60H/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
AP01N60H/J
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=0.8A
VG=10V
0
0.5
1
1.5
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
6.0V
5.5V
5.0V
VG=4.5V
0
0.3
0.6
0.9
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
6.0V
5.5V
5.0V
VG=4.5V
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCTj = 25 oC
1
2
3
4
5
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP01N60H/J
0.01
0.1
1
10
1 10 100 1000 10000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse
10us
100us
1ms
10ms
100ms
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
4
8
12
16
0246810
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=1.6A
VDS =480V
1
10
100
1000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
