tee _ wae 2 LEE an By pe Maucsezy Oo27600 4 i 3469674 FAIRCHILD SEMICONDUCTOR 84D 27800 D CREE 2N6759/2N6760 eR SRILD N-Channel Power MOSFETs, A Schlumberger Company 5.5 A, 350 V/ 400 V Power And Discrete Division T-39~11 Description TO-204AA | These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed S applications, such as off-line switching power supplies, UPS, AC and DG motor controls, relay and solenoid drivers. e Ves Rated at +20 V Y S Silicon Gate for Fast Switching Speeds \so0020F Ipss: Rpsion), Specified at Elevated Temperature 2N6759 Rugged 2N6760 Low Drive Requirements @ Ease of Paralleling Maximum Ratings Rating Rating Symbol Characteristic 2N6760 2N6759 Unit Vpss Drain to Source Voltage 400 350 Vv Vocr Drain to Gate Voltage 400 350 Vv Reg = 1.0 MQ Vas Gate to Source Voltage 20 +20 Vv Ty, Tstg | Operating Junction and -55 to +150 -55 to +150 C , Storage Temperatures Th Maximum Lead Temperature 300 300 C | for Soldering Purposes, 1/16 From Case for 10 s Maximum On-State Characteristics Rpscon) | Static Drain-to-Source 1.0 1.5 Q : On Resistance lp Drain Current A Continuous at To = 25C 5.5 4.5 Continuous at Te = 100C 3.5 3.0 lo Pulsed 8.07 7.07 Maximum Thermal Characteristics Rac Thermal Resistance, 1.67 1.67 C/W Junction to Case Pp Total Power Dissipation Ww at To = 25C 75 75 at To = 100C 30 30 Linear Derating Factor 0.6 0.6 WIG Notes All values are JEDEC registered except as noted. For information concerning connection diagram and package outline, refer to Section 7. 2-13cmt ane 84D 27801 T-39-11 By pe Wsyeau7y OOe7soO1 I | 3469674 FAIRCHILD SEMICONDUCTOR 2N6759/2N6760 D = Electrical Characteristics (To = 25C unless otherwise noted) Unit | Symbol Characteristic | Min | Max Test Conditions Off Characteristics Vienypss | Drain Source Breakdown Voltage! Vv Ves =0 V, Ip=1.0 mA 2N6760 4007 2N6759 350? loss Zero Gate Voltage Drain Current mA Vos = Rated Voss, Veg = 0 V 4 Vos = Rated Voss, Ves=0 V, Te = 125C . lass Gate-Body Leakage Current +100 nA Vag =+20 V, Vps=0 V On Characteristics ' Vasun | Gate Threshold Voltage 2.0 4.0 V Ip =1.0 mA, Vps = Vas Rpscon) Static Drain-Source On-Resistance! 2 Vas = 10 V 2N6760 1.0 Ip =3.0 A 2N6759 1.5 Ip=9.5 A I 2N6760 2.2 Ip=3.5 A, To= 125C 2N6759 3.3 Ip=3.0 A, To= 125C Vpsjon) | Drain-Source On-Voltage! v 2N6760 6.7 Ves =10 V; Ip=5.5 A 2N6759 7.0 Vas = 10 V; Ip =4.5 A; Sts Forward Transconductance! 3.0 9.0 S$ (%) Vos = 15 V, Ip=3.5 A Dynamic Characteristics Ciss Input Capacitance 350 800 pF Vps = 25 V, Veg =0 V Coss Output Capacitance 50 300 pF = 1.0 MHz Crss Reverse Transfer Capacitance 20 80 pF Switching Characteristics (To = 26C, Figures 9, 10) tagon) Turn-On Delay Time 30 ns Vop = 175 V, Ip=3.5 A t, Rise Time 35 ns no is Reen = 15 tarot Turn-Off Delay Time 55 ns t Fall Time 55 ns ; Qg Total Gate Charge 30? nc Vas=10 V, IDp=7.0A : Vop = 180 V 2-14ma ram THR HEE COTE OW LT CAE UE epeneenemnaem NE TS mae wm - ~ a &4 DE 3469674 0027802 2 3469674 FAIRCHILD SEMICONDUCTOR 84D 27802 D _ 2N6759/2N6760 T-39-11 Electrical Characteristics (Cont.) (Tc = 25C uniess otherwise noted) Symbol Characteristic | Min Typ | Max unit | Test Conditions Source-Drain Diode Characteristics Is Continuous Source Current A 2N6760 5.5 2N6759 4.5 Ion Pulsed Source Current A 2N6760 8.0 2N6759 7.0 Vsp Diode Forward Voltage 2N6760 0.75 1.5 v Ig = 5.5 A; Vag =0 V 2N6759 0.70 1.4 Ig =4.5 A; Vag =0 V ter Reverse Recovery Time 5507 ns Ves =0 V, Ty = 180C le =Ism, dig/dt = 100 A/pS Qrar Reverse Recovery Charge 8.07 pe Vag =0 V, Ty = 150C le =Isu, dig/dt = 100 A/S Notes 1, Pulse test: Pulse width <300 ys, Outy cycle <2% 3. Non-JEDEC registered value. Typical Performance Curves Figure 1 Output Characteristics ? Figure 2 Static Drain to Source Resistance vs Drain Current 2.8 T9=25C 70V 6 180 pe PULSE TEST wu (2A 2 2 <5 Q 20 B4 = 4 uy 16 R cz Go ac Zz 3 Qh 12 Ba < j ne b2 1 os & z 1 2 o4 40v 9 0 0 2 4 & 8 10 0 2 4 6 8 10 Yos~ DRAIN TO SOURCE VOLTAGEV lp DRAIN CURRENTA POIS20F PCIQS3OF 2-15 + meen aow mene nt 3469674 FAIRCHILD SEMICONDUCTOR G4 DEM S449674 oO27803 4 2N6759/2N6760 T=39-11 Typical Performance Curves (Cont.) Figure 4 Temperature Variation of Gate to Figure 3 Transfer Characteristics Source Threshold Voltage 1.3 Vps = 10 V 8 # 12 Wan = You 6 g bb=1.0 t 5g Wi E 2 goe @ 1.0 3 & z= E oe a 4 3 a a L gq 0.8 2 Zz = Ty = 256 = oO? 3 : 6 Ts i 1 2 8 4 5 6 7 =80 0 50 100 150 VasgGATE TO SOURCE VOLTAGEV TyJUNCTION TEMPERATUREC PCIOSCOF PCOgs41F Figure 6 Gate to Source Voltage vs Figure 5 Capacitance vs Drain to Source Voitage Total Gate Charge 1000 i Vas =0V {=1.0 MHz Ty =25C 7 Z a0 wi - + g Vpp = 180 V i & 5 : eco 8 z 5 \ o 3 6 5 ; 200 Con 3 o| om a 10 20 wn a 5O oe o a 16 24 2 0 Vps DAAIN TO SOURCE VOLTAGEV @QgTOTAL GATE CHARGEnG PO1OsS0F POIOSOOF Figure 7 Forward Biased Safe Operating Area Figure 8 Transient Thermal Resistance vs Time 108 10" " . THIS AREA BE IpDRAIN CURRENTA a ZehJ.0- TRANSIENT THERMAL RESISTANCE C/W 3 To = Ty< 180C SINGLE PULSE ; sem CURRENT LIMITED 10-1 10-1 wt 2 5 10 2 108 10-7 500 10: 102 108 10 VosDRAIN TO SOURCE VOLTAGEV t-TEme PCIISOOF POICOIOF 2-161 Rg oe Looe Ieee eee SEE mee rere Frome erent 3469674 FAIRCHILD SEMICONDUCTOR ay pe s4nae74 Oo0e7604 4 i 2N6759/2N6760 T-39-11 Typical Electrical Characteristics Figure 9 Switching Test Circuit PULSE GENERATOR eS Vin s < ee Veo AL Vout DUT g Res CRO4A50F Figure 10 Switching Waveforms OUTPUT, Vout INVERTED (NPUT, Vin 50% S0% 10% PULSE WIDTH Wro0s00F 2-17