ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -55°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current ±50mA
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter V oltage BVCEO 30V
Collector-base V oltage BVCBO 70V
Emitter-collector V oltage BVECO 7V
Emitter-base V oltage BVEBO 5V
Collector Current 50mA
Power Dissipation 150mW
POWER DISSIPATION
T otal Power Dissipation 200mW
(derate linearly 4.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park V iew Road West,
Park V iew Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
17/7/08
A.C. INPUT PHOTOTRANSISTOR
OPTICALLY COUPLED
ISOLATORS
APPROVALS
zUL recognised, File No. E91231
Package Code " GG "
'X' SPECIFICATION APPROV ALS
zVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The CNY35 optically coupled isolator consists of
two infrared light emitting diodes connected in inverse
parallel and NPN silicon photo transistor in a standard
6 pin dual in line plastic package.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
zHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
zAC or polarity insensitive input
zAll electrical parameters 100% tested
zCustom electrical selections available
APPLICATIONS
zComputer terminals
zIndustrial systems controllers
zTelephone sets, Telephone exchangers
zSignal transmission between systems of
different potentials and impedances
CNY35X
CNY35
0.26
0.5
1
34
6
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
25
0.5
Dimensions in mm
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
10.46
9.86
0.6
0.1 1.25
0.75
DB91040
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = ±10mA
Output Collector-emitter Breakdown (BVCEO)30 V I
C = 1mA
( note 2 )
Collector-base Breakdown (BVCBO)70 V I
C = 100μA
Emitter-base Breakdown (BVEBO)5 V I
E = 100μA
Emitter-collector Breakdown (BVECO)7 V I
E = 100μA
Collector-emitter Dark Current (ICEO)50nAV
CE = 10V
Coupled Current Transfer Ratio (CTR) (note 2 ) 1 0 % ±10mAIF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT) 0.4 V ±10mAIF , 0.5mAIC
Input to Output Isolation Voltage V ISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Response Time (Rise), tr 4 1 8 μSV
CE = 2V , IC = 2mA
Response Time (Fall), tf 3 1 8 μSR
L = 100Ω
17/7/08
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB91040m-AAS/A3
17/7/08
100
Ambient temperature TA ( °C )
300
0
400
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
20
40
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
200
Forward current IF (±mA)
80
-30 0 25 50 75 100 125
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
Normalised Output Current vs.
Ambient Temperature
-2.0 -1.0 0 1.0 2.0
Forward voltage VF ( V )
-100
10-3
10-2
0.0001
0.001
0.1
1
0.1 0.2 0.5 1 2 5 10 20 50
1
10-1
1.6
1.8
2.0
2.2
2.4
-30 0 25 50 75 100
Ambient temperature TA ( °C )
5
Normalised to VCE = 10V ,
IF = ±10mA , RBE = 1MΩ ,
TA = 25°C
IF = ±20mA
IF = ±10mA
IF = ±5mA
Normalised output current ( IC )
Normalised Output Current vs.
Collector-emitter Voltage
IF = -10mA
IF = +10mA
100
120
0
10
Collector-emitter voltage VCE ( V )
Normalised to VCE = 10V ,
IF = ±10mA , TA = 25°C
0.1 0.2 0.5 1 2 5 10 20 50 100
Forward current IF (±mA)
0.01
0.0005
0.005
0.05
0.5
-80
-60
-40
-20
0
20
40
60
80
100
Normalised Output Current vs.
Forward Current
Forward current IF (±mA)
Forward Current vs. Forward Voltage
Normalised output current ( IC )
Normalised output current ( IC )
Normalised to VCE = 10V ,
IF = +10mA , TA = 25°C
DB91040m-AAS/A3
