Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 80V
▼ Single Drive Requirement RDS(ON) 45mΩ
▼ Fast Switching Performance ID21.3A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.0 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 41.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.33
Continuous Drain Current, VGS @ 10V 13.4
Pulsed Drain Current180
Gate-Source Voltage +25
Continuous Drain Current, VGS @ 10V 21.3
Parameter Rating
Drain-Source Voltage 80
1
AP9980GH/J
RoHS-compliant Product
200810172
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9980GJ) are
available for low-profile applications.
GDSTO-251(J)
GDSTO-252(H)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 80 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.07 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=12A - - 45 mΩ
VGS=4.5V, ID=8A - - 55 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=12A - 20 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=64V ,VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=+25V - - +100 nA
QgTotal Gate Charge2ID=12A - 18 30 nC
Qgs Gate-Source Charge VDS=64V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC
td(on) Turn-on Delay Time2VDS=40V - 11 - ns
trRise Time ID=12A - 20 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 29 - ns
tfFall Time RD=3.3Ω-30-ns
Ciss Input Capacitance VGS=0V - 1810 2900 pF
Coss Output Capacitance VDS=25V - 135 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 96 - pF
RgGate Resistance f=1.0MHz - 1.6 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=20A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=12A, VGS=0V, - 57 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 140 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9980GH/J
AP9980GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
trr
Qrr
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
40
50
60
0 3 6 9 12 15 18
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
6.0V
5.0V
4.5V
VG=3.0V
0
10
20
30
40
50
0369121518
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
6.0V
5.0V
4.5V
VG=3.0V
38
42
46
50
54
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=8A
TC=25oC
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=12A
VG=10V
0
0.5
1
1.5
2
2.5
3
-50 0 50 100 150
Tj , Junction Temperature ( oC)
VGS(th) (V)
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Qrr
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP9980GH/J
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
12
0 10203040
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=12A
VDS =40V
VDS =50V
VDS =64V
10
100
1000
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
10us
100us
1ms
10ms
100ms
DC
TC=25oC
Single Pulse
Package Outline : TO-252
Millimeters
MIN NOM MAX
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
F 2.20 2.63 3.05
F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252
Laser Marking
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
e
e
D
D1
E2
E1
F
B1 F1
A2
A3 C
R : 0.127~0.381
(
0.1mm
Part Number
Package Code
9980GH
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
LOGO
Meet Rohs requirement
for low voltage MOSFET only
E3
5
Package Outline : TO-251
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.50 0.69 0.88
B2 0.60 0.87 1.14
c0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 5.20 5.35 5.50
E 6.70 7.00 7.30
E1 5.40 5.80 6.20
e---- 2.30 ----
F 5.88 6.84 7.80
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
Millimeters
9980GJ
YWWSSS
Part Numbe
r
Package Code
A
c1
A1
c
e
D
E1 E
B1
B2
F
D1
e
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW ：Week
SSS ：Sequence
LOGO
meet Rohs requirement
for low voltage MOSFET only
6
