37
Crystal oscillator
1
2
3
4
OE or ST
GND
OUT
V DD
NO.
#4 #3
#1
0.5 5.08 (1.0) (1.0)
3.6
#2
5.0
0.05
Min.
2.7 Max. 5.8 Max.
10.5 Max.
Recommended soldering pattern External dimensions
(Unit: mm)(Unit: mm)
18.4320CE
PTF9352A
1.3 3.8 1.3
2.1
2.52.1
Pin terminal
Specifications (characteristics)
SMALL SOJ HIGH-FREQUENCY CRYSTAL OSCILLA TOR
SG-636 series
Note: • Unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
• External by-pass capacitor is required.
•
Metal may be exposed on the top or bottom of this product. This won't affect any quality, reliability or electrical spec.
• A small SMD that enables high-density mounting.
• A general-purpose device with builtin heat-resisting cylindrical AT-cut
crystal and allowing almost the same temperature condition for soldering
as SMD IC.
• Low current consumption by output enable function(OE) or standby
function(ST).
Actual size
Products number
Q33636xxxxxxx00
Item
Symbol SG-636PTF
SG-636PH SG-636SCE/PCE SG-636PDE
Remarks
Specifications
Output frequency range
f02.21675 MHz to
41.0001
MHz
to
2.21675 MHz to 41.0000 MHz
41.0000 MHz
70.0000
MHz
Power source
Max. supply voltage
VDD-GND
-0.5 V to +7.0 V -0.5 V to +7.0 V
voltage Operating voltage
VDD 5.0 V ±0.5 V 3.3 V ±0.3 V 2.5 V ±0.25 V
Temperature
Storage temperature
TSTG -55 °C to +100 °C
Stored as bare product after unpacking
range
Operating temperature
TOPR -20 °C to +70 °C
Frequency stability
∆f/f0C: ±100 x 10-6
Current consumption
lop 17 mA Max. 35 mA Max. 9 mA Max. 5 mA Max.
No load condition
Output disable current
IOE 10 mA Max. 20 mA Max. 5 mA Max. 3 mA Max.
OE=GND, ST=GND 2 µA Max.(SCE)
Duty
C-MOS level tw/t40 % to 60 % 45 % to 55 %
C-MOS load: 1/2 VDD level
TTL level 45 % to 55 % —
TTL load: 1.4 V level
Output Joltage VOH
VOL VDD -0.4 V Min. IOH
=-8 mA (PTF) /-4 mA (PH / SCE PCE / PDE)
VOL 0.4 V Max.
IOL =16 mA (PTF) /4 mA (PH / SCE PCE / PDE
)
Output load condition
C-MOS CL50 pF Max.
20 pF Max.( ≤55 MHz)
30 pF Max. 15 pF Max.
(fan out)
15 pF Max.( > 55 MHz)
TTL N 10 TTL Max. 5 LSTTL Max. — CL<_15 pF
Output enable/disable input voltage
VIH 2.0 V Min. 0.8 VDD Min.
OE,ST
VIL 0.8 V Max. 0.2 VDD Max.
Output rise time
C-MOS level tTLH 7 ns Max. 5 ns Max. C-MOS load: 20 %→80 % VDD
TTL level 5 ns Max. — TTL load: 0.4 V→2.4 V
Output fall time
C-MOS level tTHL 7 ns Max. 5 ns Max. C-MOS load: 80 %→20 % VDD
TTL level 5 ns Max. — TTL load: 2.4 V→0.4 V
Oscillation start up time
tosc 4 ms Max.
10 ms Max. 4 ms Max.
Time at minimum operating voltage to be O s
Aging
fa
±5 x 10-6 /year Max.
Ta=+25 °C,V
DD
=5
V
,first year
Shock resistance
S.R.
±20 x 10-6 Max.
Three drops on a hard board from 750 mm or excitation test
with 29400 m/s2x 0.3 ms x 1/2 sine wave in 3 directions
38
Crystal oscillator
Specifications (characteristics)
Operating condition and Frequency band
100 MHz50 MHz1 MHz 150 MHz
SG-636PTW/STW/PHW/SHW
Frequency stability:B
( -20 to +70 °C)
Operating condition
SG-636PTF
SG-636PCE/SCE
SG-636PH SG-636PTW/STW/PHW/SHW
Frequency stability:C
( -20 to +70 °C)
SG-636PCW/SCW
Frequency stability:B
(-20 to +70 °C)
32
Frequency stability:C
( -20 to +70 °C)
Frequency stability:C
( -20 to +70 °C)
SG-636PCW/SCW
135
32 135
412.21675
SG-636PDE
412.21675
135
2.21675 41 70 135
3.3 V±0.3 V
2.5 V±0.25 V
5 V±0.5 V
Output frequency range
Power source
voltage
Temperature
range
Frequency stability
Current consumption
Output disable current
Standby current
Duty
Output voltage
Output load condition (fan out)
Output enable
disable input voltage
Output
rise time
Output
fall time
Oscillation start up time
Aging
Shock resistance
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
∆f/f
0
Iop
Io
E
I
ST
tw/t
V
OH
V
OL
C
L
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
C-MOS level
TTL level
C-MOS level
TTL level
C-MOS level
TTL level
SG-636PTW/STW SG-636PHW/SHW SG-636PCW/SCW
Specifications Remarks
32.0001 MHz to 135.0000 MHz
-0.5 V to +7.0 V
5.0 V±0.5 V3.3 V±0.3 V
-55 °C to +100 °C
-20 °C to +70 °C
B: ±50 x10
-6 C: ±100 x10
-6
45 mA Max. 28 mA Max.
30 mA Max. 16 mA Max.
50 µA Max.
— 40 % to 60 %
40 % to 60 % —
VDD-0.4 V Min.
0.4 V Max.
15 pF Max.
10 ms Max.
±5 x 10-6/year Max.
±20 x 10-6 Max.
Stored as bare product after unpacking
No load condition
OE=GND(P*W)
ST=GND(S*W)
C-MOS load: 1/2VDD
TTL load: 1.4 V
IOH= -16
m
A (*TW/HW)/-8 mA(
*CW)
IOL= -16
m
A (*TW/HW)/8 mA(
*CW)
OE,ST
OE,ST
C-MOS load: 20 %→80 % VDD
TTL load: 0.4 V→2.4 V
C-MOS load: 80 %→20 % VDD
TTL load: 2.4 V→0.4 V
Time at minimum operating voltage to be 0 s
Ta=+25 °C, VDD =5 V
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s
2
x 0.3 ms x 1/2
sine wave in 3 directions
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Item
Symbol
0.7 VDD Min.
0.2 VDD Max.
4 ns Max.
—
4 ns Max.
—
2.0 V Min.
0.8 V Max. 4 ns Max.
—
4 ns Max.
—
—
4 ns Max.
—
4 ns Max.
