TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ905P
BUZ906P
VDSX Drain – Source Voltage
VGSS Gate – Source Voltage
IDContinuous Drain Current
ID(PK) Body Drain Diode
PDTotal Power Dissipation @ Tcase = 25°C
Tstg Storage Temperature Range
TjMaximum Operating Junction Temperature
RθJC Thermal Resistance Junction – Case
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1.0°C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
32
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.80 (0.819)
21.46 (0.845) 6.15
(0.242)
BSC
19.81 (0.780)
20.32 (0.800) 4.50
(0.177)
Max.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
P–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• N–CHANNEL ALSO AVAILABLE AS
BUZ900P & BUZ901P
Pin 1 – Gate
TO–247
Pin 2 – Source Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ905P
-160V BUZ906P
-200V
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ905P
BUZ906P
Characteristic Test Conditions Min. Typ. Max. Unit
BVDSX Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
VGS(OFF) Gate – Source Cut–Off Voltage
VDS(SAT)* Drain – Source Saturation Voltage
IDSX Drain – Source Cut–Off Current
yfs* Forward Transfer Admittance
-160
-200
±14
-0.15 -1.5
-12
-10
-10
0.7 2
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤2%.
VGS = 10V BUZ905P
ID= -10mA BUZ906P
VDS = 0 IG= ±100µA
VDS = -10V ID= -100mA
VGD = 0 ID= -8A
VDS = -160V
BUZ905P
VGS = -10V VDS = -200V
BUZ906P
VDS = -10V ID= -3A
V
V
V
V
mA
S
Characteristic Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
ton Turn–on Time
toff Turn-off Time
734
300
26
120
60
VDS = 10V
f = 1MHz
VDS = -20V
ID= -5A
pF
ns
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
025 50 75 100 125 150
0
25
50
75
100
125
150
T — CASE TEMPERATURE (˚C)
C
CHANNEL DISSIPATION (W)
Derating Chart
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ905P
BUZ906P
0
-10 -20 -30 -40 -50 -60 -70 -80 -90
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
P
=
1
2
5
W
CH
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
-7V
-6V
-5V
-4V
-3V
-2V
0
-10 -20 -30 -40 -50 -60 -70 -80 -90
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
P
=
1
2
5
W
CH
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
-7V
-6V
-5V
-4V
-3V
-2V
T = 75˚C
C
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
-0.01
-0.1
-1
-10
-1 -10 -100 -1000
BUZ906
160V
200V
D
C
OPE
R
A
T
I
O
N
BUZ905
0.1
1
10
100
0
-1 -2 -3 -4 -5 -6 -7 -8
G — TRANSCONDUCTANCE (S)
FS
I — DRAIN CURRENT (A)
D
T = 75˚C
C
T = 25˚C
C
V = -20V
DS
Typical Output Characteristics Typical Output Characteristics
Forward Bias Safe Operating Area Transconductance
0
-2 -4 -6 -8 -10 -12 -14
0
-2
-4
-6
-8
-10
V — GATE – SOURCE VOLTAGE (V)
GS
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
I = -6A
D
I = -3A
D
I = -1A
D
T = 25˚C
C
I — DRAIN CURRENT (A)
D
V — GATE – SOURCE VOLTAGE (V)
GS
0
-1 -2 -3 -4 -5 -6 -7 -8
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
T = 75˚C
C
T = 100˚C
C
V = -10V
DS
Drain – Source Voltage
vs
Gate – Source Voltage Typical Transfer Characteristics
