JI ANGSU CHANGJIANG ELECTRONICS TECHNOL OGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
B772 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 500 mW (Tamb=25℃)
Collector current
ICM: -3 A
Collector-base voltage
V(BR)CBO: -40 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
CLASSIFICATION OF hFE(1)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base br eakdown voltage V(BR)CBO Ic=-100µA , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO I
C= -10 mA , IB=0 -30 V
E mitte r-b ase break dow n volt age V(BR)EBO I
E= -100 µA, I C=0 -6 V
Collector cut-off current ICBO V
CB= - 40 V, IE=0 -1 µA
Collector cut-off current ICEO V
CE=-30 V, IB=0 -10 µA
Emitte r c u t -o ff current IEBO V
EB=-6V, IC=0 -1 µA
hFE(1) V
CE= -2V, IC= -1A 60 400
DC current gain hFE(2) V
CE=-2V, IC= -100mA 32
Collector-emit ter saturati on voltage VCE(sat) IC=-2A, IB= -0 .2 A -0.5 V
Base-emitter satu ration voltage VBE(sat) IC=-2A, IB= -0 .2 A -1 .5 V
Transition fre quency f T
VCE= -5V, C=-0.1A
f = 10MHz 50 MHz
CLASSIFICATION OF hFE(1)
Rank R O Y GR
Range 60-120 100-200 160-320 200-400
SOT-89
1. BASE
2. COLLETO R
3. EMITTER
1 2 3
