2SA1478 / 2SC3788 Ordering number : EN2253B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1478 / 2SC3788 High-Definition CRT Display Video Output Applications Features * * * High breakdown voltage : VCEO200V. Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET process. Specifications ( ) : 2SA1478 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)200 V Collector-to-Emitter Voltage VCEO (--)200 V Emitter-to-Base Voltage VEBO (--)5 Collector Current Collector Current (Pulse) Collector Dissipation V IC (--)100 mA ICP (--)200 mA PC Junction Temperature Tj Storage Temperature Tstg 1.3 W 5 W Tc=25C 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions Ratings min typ max VCB=(--)150V, IE=0A VEB=(--)4V, IC=0A VCE=(--)10V, IC=(--)10mA 40* Unit (--)0.1 A (--)0.1 A 320* Continued on next page. * : The 2SA1478 / 2SC3788 are classified by 10mA hFE as follws: Rank C D E hFE 40 to 80 60 to 120 100 to 200 F 160 to 320 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53007CB TI IM TC-00000705 / O3103TN(KT) /71598HA (KT)/3247TA, TS No.2253-1/5 2SA1478 / 2SC3788 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product Ratings Conditions min typ fT Cob VCE=(--)30V, IC=--10mA Output Capacitance VCB=(--)30V, f=1MHz (2.6)1.7 Reverce Trancefer Capacitance Cre VCB=(--)30V, f=1MHz (1.7)1.2 Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage 150 MHz pF pF IC=(--)20mA, IB=(--)2mA IC=(--)20mA, IB=(--)2mA Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=(--)10A, IE=0A IC=(--)1mA, RBE= Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10A, IC=0A Unit max (--)0.6 V (--)1.0 V (--)200 V (--)200 V (--)5 V Package Dimensions unit : mm (typ) 7516A-002 8.0 4.0 3.6 3.3 1.0 11.0 1.5 7.5 3.0 1.4 1.0 3.0 1.6 0.8 0.8 0.75 15.5 0.7 2 3 1.7 1 1 : Emitter 2 : Collector 3 : Base 2.4 4.8 SANYO : TO-126ML IC -- VCE --8 --50A --5 --30A --4 --20A --3 --10A Collector Current, IC -- mA Collector Current, IC -- mA --40A 160A 2SC3788 18 --7 --6 IC -- VCE 20 2SA1478 140A 16 120A 14 12 100A 10 80A 8 60A 6 40A 4 20A --2 2 --1 0 --1 IB=0A --2 --3 --4 --5 --6 --7 --8 --9 --10 Collector-to-Emitter Voltage, VCE -- V ITR03743 0 IB=0A 0 1 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V 10 ITR03744 No.2253-2/5 2SA1478 / 2SC3788 IC -- VCE --10 IC -- VCE 10 2SA1478 2SC3788 80A 70A --50A --8 Collector Current, IC -- mA Collector Current, IC -- mA 9 --40A --6 --30A --4 --20A --2 --10A 8 60A 7 6 50A 5 40A 4 30A 3 20A 2 10A 1 IB=0A --20 --40 --60 --80 --100 Collector-to-Emitter Voltage, VCE -- V ITR03745 0 30 40 50 60 70 80 90 100 IC -- VBE 2SC3788 VCE=10V --40 --25C 80 25C Ta=75C --25C 25C Ta=75C --60 --20 60 40 20 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE -- V 0 0 --1.0 5 0.2 0.8 DC Current Gain, hFE Ta=75C 25C --25C 7 5 1.0 ITR03748 2SC3788 VCE=10V 3 Ta=75C 2 100 0.6 hFE -- IC 5 3 2 0.4 Base-to-Emitter Voltage, VBE -- V 2SA1478 VCE=10V 7 0 ITR03747 hFE -- IC 1000 DC Current Gain, hFE 20 100 --80 0 10 120 2SA1478 VCE=10V --100 IB=0A 0 Collector-to-Emitter Voltage, VCE -- V ITR03746 IC -- VBE --120 Collector Current, IC -- mA 0 Collector Current, IC -- mA 0 25C 100 --25C 7 5 3 3 2 2 5 7 --1.0 2 2 5 3 --10 Collector Current, IC -- mA 3 5 7 --100 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA ITR03749 2SC3788 VCE=30V 7 2 100 7 5 3 2 10 7 100 2 ITR03750 f T -- IC 1000 2SA1478 VCE=30V 3 10 2 f T -- IC 5 Gain-Bandwidth Product, f T -- MHz 7 Gain-Bandwidth Product, f T -- MHz 10 5 3 2 100 7 5 3 2 7 5 5 7 --1.0 2 3 5 7 2 3 5 --10 Collector Current, IC -- mA 7 --100 2 ITR03751 10 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR03752 No.2253-3/5 2SA1478 / 2SC3788 Cob -- VCB 2 Cob -- VCB 2 2SC3788 f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2SA1478 f=1MHz 10 7 5 3 2 1.0 5 7 --1.0 2 3 3 2 1.0 7 5 3 2 1.0 7 7 --1.0 2 3 5 7 3 5 7 2 10 3 5 Cre -- VCB 2SC3788 f=1MHz 7 5 3 2 1.0 7 5 7 1.0 2 3 5 7 10 2 3 5 2SC3788 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 7 5 3 2 --0.1 7 100 2 ITR03756 VCE(sat) -- IC 1.0 2SA1478 IC / IB=10 --1.0 7 100 2 ITR03754 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 2 2 10 5 2 3 5 7 --100 2 --10 Collector-to-Base Voltage, VCB -- V ITR03755 3 7 1.0 2 2SA1478 f=1MHz 5 5 Collector-to-Base Voltage, VCB -- V Cre -- VCB 10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 5 Reverce Transfer Capacitance, Cre -- pF Reverce Transfer Capacitance, Cre -- pF 5 7 2 3 5 7 --100 2 --10 Collector-to-Base Voltage, VCB -- V ITR03753 2 5 7 7 7 5 10 5 3 2 0.1 7 5 7 5 5 7 --1.0 2 3 5 7 2 3 5 --10 Collector Current, IC -- mA --100 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 --1.0 7 5 --1.0 2 3 5 7 2 2 3 5 --10 Collector Current, IC -- mA 7 --100 3 5 7 10 2 3 Collector Current, IC -- mA 2 ITR03759 5 7 100 ITR03758 VBE(sat) -- IC 2SC3788 IC / IB=10 7 3 7 1.0 10 5 5 7 ITR03757 2SA1478 IC / IB=10 7 3 3 5 2 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 2 1.0 7 5 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 ITR03760 No.2253-4/5 2SA1478 / 2SC3788 2SA1478 / 2SC3788 ICP=200mA IC=100mA 7 DC 5 DC op Collector Dissipation, PC -- W 100 6 s 0 50 s 1m ms 10 Collector Current, IC -- mA 2 op er ati o ( tio Tc= n n (T 25C a= 25 ) C) era 3 2 10 7 5 3 2 5 PC -- Ta ASO 3 2SA1478 / 2SC3788 5 4 Id ea lr 3 ad iat io n 2 1.3 1 No he at sink (For PNP, minus sign is omitted.) 7 10 2 3 5 7 100 2 3 5 Collector-to-Emitter Voltage, VCE -- V ITR03761 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 ITR03762 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No.2253-5/5