933665120235 - NXP - Datasheet.Live

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Apr 23 1999 Apr 15

DISCRETE SEMICONDUCTORS

BF820; BF822

NPN high-voltage transistors

ook, halfpage

M3D088

1999 Apr 15 2

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistors BF820; BF822

FEATURES

•Low current (max. 50 mA)

•High voltage (max. 300 V).

APPLICATIONS

•Telephony and professional communication equipment.

DESCRIPTION

NPN high-voltage transistor in a SOT23 plastic package.

PNP complements: BF821; BF823.

MARKING

Note

1. ∗= p : Made in Hong Kong.

∗= t : Made in Malaysia.

TYPE NUMBER MARKING CODE(1)

BF820 1V∗

BF822 1X∗

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

MAM255

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BF820 −300 V

BF822 −250 V

VCEO collector-emitter voltage open base

BF820 −300 V

BF822 −250 V

VEBO emitter-base voltage open collector −5V

Ccollector current (DC) −50 mA

ICM peak collector current −100 mA

IBM peak base current −50 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 Apr 15 3

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistors BF820; BF822

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB = 200 V −10 nA

IE= 0; VCB = 200 V; Tj=150 °C−10 µA

IEBO emitter cut-off current IC= 0; VEB =5V −50 nA

hFE DC current gain IC= 25 mA; VCE =20V 50 −

CEsat collector-emitter saturation

voltage IC= 30 mA; IB=5mA −600 mV

Cre feedback capacitance IC=i

c= 0; VCB = 30 V; f = 1 MHz −1.6 pF

fTtransition frequency IC= 10 mA; VCE = 10 V; f = 100 MHz 60 −MHz

1999 Apr 15 4

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistors BF820; BF822

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

1999 Apr 15 5

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistors BF820; BF822

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Apr 15 6

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistors BF820; BF822

NOTES

1999 Apr 15 7

Philips Semiconductors Product speciﬁcation

NPN high-voltage transistors BF820; BF822

NOTES

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 15 Document order number: 9397 750 05657