ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc) V(BR)DSS 50 – – Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS –
–
–
–
–
–
0.1
15
60
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS – – ±60 µAdc
ON CHARACTERISTICS (Note 1.)
Gate–Source Threaded Voltage
(VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 – 2.0 Vdc
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc) rDS(on) – 5.0 10 Ohms
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) |yfs| 50 – – mS
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 5.0 Vdc) Ciss – 30 – pF
Output Capacitance (VDS = 5.0 Vdc) Coss – 10 –
Transfer Capacitance (VDG = 5.0 Vdc) Crss – 5.0 –
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time td(on) – 2.5 – ns
Rise Time (VDD = –15 Vdc, ID = –2.5 Adc, tr– 1.0 –
Turn–Off Delay Time
,
.
,
RL = 50 Ω)td(off) – 16 –
Fall Time tf– 8.0 –
Gate Charge QT– 6000 – pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current IS– – 0.130 A
Pulsed Current ISM – – 0.520
Forward Voltage (Note 2.) VSD – 2.5 – V
1. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
LBSS84LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1 1.5 2 2.5 3
ID, DRAIN CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
VDS = 10 V
150°C
25°C
-55°C
024 10
0
0.15
0.2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
13 957
3.25 V
2.75 V
2.25 V
2.5 V
3.0 V
VGS = 3.5 V
4
0.35
0.4
0.5
0.45 TJ = 25°C
2/4
LESHAN RADIO COMPANY, LTD.