October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (S053)
ep oxy se aled
.RUGGEDIZED VSWR ∞:1
.INPUT MATCHING
.LOW THERMAL RESISTANCE
.CLASS A OPERATION
.POUT = 0.6 W MIN. WITH 10.8 dB GAIN
DESCRIPTION
The MSC1000MP is a Class A, common emitter
transistor with an emitter ballasted Matrix geo-
metry specifically designed for DME/IFF driver ap-
plications.
This device is capable of withstanding a ∞:1 load
VSWR at any phase angle under full rated condi-
tions. Low RF thermal resistance and semi-auto-
matic wire bonding techniques ensure high relia-
bility and product consistency.
The MSC1000MP is housed in the IMPAC™
package with internal input matching.
PIN CONNECTION
BRANDING
1000MP
OR DER COD E
MSC1000MP
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (See Safe Area) — W
ICDevice Current* 30 0 mA
VCE Collector-Emitter Bias Voltage* 20 V
TJJunction Temperature (Pulsed RF Operation) 20 0 °C
TSTG Storage Temperature − 65 to +150 °C
RTH(j-c) Junction-Case Thermal Resistance* 35 °C/W
*Applies only to rated RF amplifier operation
MSC1000MP
1. Collector 3. Base
2. Emitter 4. Emitter
THERMAL DATA
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