2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Max ID Max TA = +25C 60V 7.5 @ VGS = 5V 0.23A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control Power Management Functions Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) The 2N7002DWQ is suitable for automotive applications requiring specific change control; it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data SOT363 Top View Case: SOT363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D2 G1 S1 S2 G2 D1 Top View Internal Schematic Ordering Information (Notes 4 and 5) Part Number 2N7002DW-7-F 2N7002DWQ-7-F 2N7002DW-13-F 2N7002DWQ-13-F Notes: Compliance Standard Automotive Standard Automotive Case SOT363 SOT363 SOT363 SOT363 Packaging 3,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Jan 1 YM Month Code YM K72 Date Code Key Year 1998 Code J K72 1999 K 2000 L Feb 2 2N7002DW Document number: DS30120 Rev. 19 - 2 2001 M Mar 3 K72 = Product Type Marking Code YM or YM = Date Code Marking Y or Y = Year (ex: G = 2019) M = Month (ex: 9 = September) 2002 N Apr 4 2003 P May 5 2004 R ... ... Jun 6 1 of 5 www.diodes.com 2017 E Jul 7 2018 F Aug 8 2019 G Sep 9 2020 H Oct O 2021 I 2022 J Nov N 2023 K Dec D October 2019 (c) Diodes Incorporated 2N7002DW Maximum Ratings (@TA = +25C, unless otherwise specified.) Symbol Value Unit Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS 1.0M VDGR 60 V Continuous VGSS 20 V Pulsed VGSS 40 V ID 0.23 0.18 0.14 A IS 0.53 A IDM 0.8 A Gate-Source Voltage Steady State Continuous Drain Current (Note 7) VGS = 5V TA = +25C TA = +70C TA = +100C Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Total Power Dissipation (Note 6) TA = +70C 0.2 PD Steady State RJA 410 PD 0.25 C/W 0.4 TA = +25C Total Power Dissipation (Note 7) W 0.12 TA = +100C Thermal Resistance, Junction to Ambient (Note 6) Unit 0.31 TA = +25C TA = +70C W 0.15 TA = +100C Thermal Resistance, Junction to Ambient (Note 7) Steady State RJA 318 C/W Thermal Resistance, Junction to Case (Note 7) Steady State RJC 135 C/W TJ, TSTG -55 to +150 C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 9) Turn-On Delay Time Turn-Off Delay Time Notes: @ TC = +25C @ TC = +125C @ TJ = +25C @ TJ = +125C Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10A IDSS A VDS = 60V, VGS = 0V IGSS 1.0 500 10 nA VGS = 20V, VDS = 0V VGS(TH) 1.0 2.0 7.5 13.5 V RDS(ON) ID(ON) gFS VSD 0.5 80 3.2 4.4 1.0 0.78 1.5 A mS V VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz tD(ON) 7.0 20 ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 tD(OFF) 11.0 20 Test Condition 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2N7002DW Document number: DS30120 Rev. 19 - 2 2 of 5 www.diodes.com October 2019 (c) Diodes Incorporated 2N7002DW 7 1.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) TJ = 25C 0.8 0.6 0.4 0.2 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 On-Region Characteristics 0 5 4 3 2 1 0 0 5 2.0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 2 On-Resistance vs. Drain Current 1.0 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 1.5 VGS = 5.0V, ID = 0.05A 1.0 0.5 0 -55 -30 -5 20 45 70 95 120 145 TJ, JUNCTION TEMPERATURE (C) Figure 3 On-Resistance vs. Junction Temperature 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4 On-Resistance vs. Gate-Source Voltage 1 ID, DRAIN CURRENT (A) RDS(on) Limited DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms 0.01 PW = 100 100s TJ(max) = 150 150C TA = 25 25C Single Pulse 0.001 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 5 SOA, Safe Operation Area 2N7002DW Document number: DS30120 Rev. 19 - 2 100 3 of 5 www.diodes.com October 2019 (c) Diodes Incorporated 2N7002DW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 E SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0 8 -All Dimensions in mm E1 F b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions C G X Y Y1 G Y1 Y Value (in mm) 0.650 1.300 0.420 0.600 2.500 X 2N7002DW Document number: DS30120 Rev. 19 - 2 4 of 5 www.diodes.com October 2019 (c) Diodes Incorporated 2N7002DW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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