SID100S12
SPT IGBT Modules
Absolute Maximum Ratings
Symbol Conditions Values Units
IGBT
V
CES
V
I
C
T
C
= 25(80)
oC
A
I
CRM
A
V
GES
T
Vj,
(T
stg
)
V
isol
Inverse Diode
T
C
= 25
oC
, unless otherwise specified
T
C
= 25(80)
oC, tP =1ms
TOPERATION <
_Tstg
AC, 1min
IF=-IC
IFRM
IFSM
T
C
= 25(80)
oC
T
C
= 25(80)
oC, tP =1ms
tP =10ms; sin.;Tj=150oC
1200
145(105)
290(210)
+20
_
40...+150(125)
4000
95(65)
290(210)
720
_
V
oC
V
A
A
A
Dimensions in mm (1mm = 0.0394")
SID100S12
SPT IGBT Modules
Characteristics
Symbol Conditions min. typ. max. Units
IGBT
V
GE(th)
V
GE
= V
CE
, I
C
= 3mA 4.8 5.5 6.45 V
I
CES
V
GE
= 0; V
CE
= V
CES
; T
j
= 25(125)
oC
0.1 0.3 mA
V
CE(TO)
T
j
= 25(125)
oC
1(0.9) 1.15(1.05) V
r
CE
V
GE
= 20V, T
j
= 25(125)
oC
13(16) 16(20) m
V
CE(sat)
I
C
= 50A; V
GE
= 15V; chip level 1.9(2.1) 2.35(2.55) V
C
ies
under following conditions
C
oes
V
GE
= 0, V
CE
= 25V, f = 1MHz 0.74
C
res
0.71
L
CE
25 nH
R
CC'+EE'
res., terminal-chip T
C
= 25(125)
oC
0.75(1) m
under following conditions:
t
d(on)
V
CC
= 600V, I
C
= 50A 150 ns
t
r
R
Gon
= R
Goff
= 15 , T
j
= 125
oC
45 ns
t
d(off)
V
GE
= ± 15V 560 ns
t
f
50 ns
E
on
(E
off
) 8.5(7.5) mJ
Inverse Diode under following conditions:
V
F
= V
EC
I
F
= 75A; V
GE
= 0V; T
j
= 25(125)
oC
2(1.8) 2.5 V
V
(TO)
T
j
= 25(125)
oC
1.3 V
r
T
T
j
= 25(125)
oC
13 16 m
I
RRM
I
F
= 75A; T
j
= 125
oC
105 A
Q
rr
di/dt = 3100A/us uC
E
rr
V
GE
= V mJ
Thermal Characteristics
R
th(j-c)
per IGBT 0.21 K/W
R
th(j-c)D
per Inverse Diode 0.5 K/W
R
th(c-s)
per module 0.05 K/W
Mechanical Data
M
s
to heatsink M6 3 5 Nm
M
t
to terminals M5 2.5 5 Nm
w 160 g
T
C
= 25
oC
, unless otherwise specified
nF
1.05
10.5
6.2
3.4
