A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 75 mA 55 V
BVEBO IE = 25 mA 4.0 V
hFE VCE = 5.0 V IC = 300 mA 10 ---
PG
ηη C
VCC = 50 V Pout = 25 W fo = 960 to 1215 MHz
PULSE WIDTH = 10 µS DUTY CYCLE = 1.0% 8.5 10
45 dB
%
NPN SILICON RF POWER TRANSISTOR
ASI SD1530-7
DESCRIPTION:
The ASI SD1530-7 is a Common
Base Device Designed for DME, IFF
and Tacan Pulse Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input Matching
• Broad Band Performance
MAXIMUM RATINGS
IC2.5 A
VCES 55 V
PDISS 125 W @ TC = 25 OC
TJ-55 OC to +200 OC
TSTG -55 OC to +200 OC
θθJC 1.4 OC/W
PACKAGE STYLE 250 2L FLG (A)
1 = COLLECTOR 2 = EMITTER
3 = BASE
