2SD1766 / 2SD1758 / 2SD1862
Transistors
Rev.A 1/3
Medium Power Transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
z
Features
1) Low VCE(sat).
VCE(sat) =0.5V(Typ.)
IC / IB= 2A / 0.2A
2) Complements the 2SB1188 / 2SB1 182 /
2SB1240.
z
Structure
Epitaxial planar type
NPN silicon transistor
z
External dimensions (Unit : mm)
−0.1
+0.2
−0.05
+0.1
−0.1
+0.2
+0.2
−0.1
(3)(2)(1)
4.0±0.3
1.0±0.2 0.5±0.1
2.5
3.0±0.2 1.5±0.1
1.5±0.1
0.4±0.1 0.5±0.1 0.4±0.1
0.4
1.5
4.5
1.6±0.1
±
0.1
−
0.1
+
0.2
−
0.1
+
0.2
+
0.3
−
0.1
2.3
±
0.22.3
±
0.2
0.65
±
0.1
0.9
0.75
1.0
±
0.2
0.55
9.5
±
0.5
5.5 1.5
±
0.3
2.5
1.5
2.3
0.5
±
0.1
6.5
±
0.2
5.1 C0.5
(3)
(2)
(1)
0.9
1.0
6.8
±
0.2 2.5
±
0.2
1.05 0.45
±
0.1
2.54 2.54
0.5
±
0.1
0.9
4.4
±
0.2
14.5
±
0.5
(1) (2) (3)
0.65Max.
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
2SD1766 2SD1758
2SD1862
Abbreviated symbol : DB
∗
∗
Denotes hFE
z
z
A bsolute maximum ratings (Ta=25qC)
2SD1766
2SD1758
2SD1862
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
∗
1 Single pulse, Pw=20ms
∗
2 When mounted on a 40
×
40
×
0.7 mm ceramic board.
∗
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm
2
or lager.
Parameter Symbol Limits Unit
VCBO 40 V
VCEO 32 V
VEBO 5V
IC
ICP
2 A (DC)
2.5 A (Pulse) ∗1
Tj 150 °C
Tstg −55 to +150 °C
PC
0.5
1∗3W
2∗2
1W
10 W (Tc=25°C)
W
2SD1766 / 2SD1758 / 2SD1862
Transistors
Rev.A 2/3
z
Electrical characteristics (Ta=25qC)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
40
32
5
−
−
−
82
−
−
−
−
−
−
−
−
−
0.5
100
30
−
−
−
1
1
0.8
390
390
−
−
VI
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=20V
V
EB
=4V
I
C
/I
B
=2A/0.2A
∗
V
CE
=5V, I
E
= −500mA, f=100MHz
∗
V
CE
=3V, I
C
=0.5A
∗
V
CB
=10V, I
E
=0A, f=1MHz
V
V
μA
μA
V
−
MHz
pF
Typ. Max. Unit Conditions
1202SD1862
2SD1766,2SD1758,
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
z
z
Packaging specifications and hFE
2SD1766
Type
T100
1000h
FE
TL
2500
−
TV2
2500
−
−
2SD1758 −
−
2SD1862 −
PQR
PQR
QR
Package Taping
Code
Basic ordering
unit (pieces)
h
FE values are classified as follows :
Item
h
FE
R
180 to 390
Q
120 to 270
P
82 to 180
z
z
Electrical characteristic curves
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
02.0
1000
2000
1
200
500
100
20
50
10
2
5
0.2 0.60.4 0.8 1.0 1.2 1.4 1.6 1.8
Ta
=
25°C
V
CE
=
3V
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2 Grounded emitter output
characteristics
0
0.1
0.2
0.3
0.4
0.5
0.4 0.8 1.2 1.6 2.00
Ta=25°C
I
B
=0A
3.0mA 2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
0.3mA
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC(mA)
Fig.3 DC current gain vs. collector
current
5
500
10 20 50 100 200 500 1A 2A
200
100
50
20
Ta=25°C
V
CE
=3V
1V
2SD1766 / 2SD1758 / 2SD1862
Transistors
Rev.A 3/3
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
500
20
200
100
50
5 10 20 50 100 200 500 1A 2A
Ta=25°C
10
20
I
C
/I
B
=50
BASE
SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
5
1
2
0.2
0.5
0.1
10 20 50 100 200 500 1A 2A
Ta=25°C
I
C
/I
B
=10
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.6 Transition frequency vs. emitter
current
−2−1
200
−5−10 −20 −50 −100−200 −500 −1A
500
1000
100
50
20
Ta
=
25
°C
V
CE
=
5V
0.5
200
10
500
1000
100
20
50
12 51020
Ta
=
25°C
f=1MHz
I
E
=
0A
I
C
=
0A
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE : Cib
(pF)
Fig.7 Collector output capacitance vs.
collector-base voltage
Cib
Cob
COLLECTOR CURRENT : IC
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.9 Safe operating area
5
0.1 50
2
0.2
0.5
1
0.1
0.05
0.2 0.5 1 2 5 10 20
0.01
0.02
(2SD1758)
PW=100ms∗
Tc=25°C
∗Single
nonrepetitive
pulse
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.8 Safe operating area
0.01
5
0.1 50
2
0.2
0.5
1
0.1
0.02
0.05
0.2 0.5 1 2 5 10 20
(2SD1766)
Pw=10ms∗
100ms∗
DC
T
a
=25°C
∗
Single
nonrepetitive
pulse
Emitter input capacitance vs.
emitter-base voltage
Ic Max
DC
Ic Max Pulse
Ta=25°C
Single
nonrepetitive
pulse
Pw=10ms
Pw=100ms
0.2 0.5 1 2 5 10 20 50
3
2
1
0.1
0.2
0.5
0.05
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.10 Safe operating area
(2SD1862)
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or co m m erc i a l l y
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
