NPN SILICON PLANAR MEDIUM DARLINGTON POWER TRANSISTORS Lx&l ISSUE 1- MARCH 94 FEATURES * 50 volt VCED * Gain of 15kat * Ptot= 1 Watt Ic = 0.5 Amp ABSOLUTE MAXIMUM IJ9&&KL RATINGS. SYMBOL PARAMETER Collector-Base Emitter-Base `CBO 50 ---- `CEO 40 ---- `EBO Voltage Collector-Emitter Voltage Voltage Peak Pulse Current Continuous Power Dissipation Operating ----. Collector Current at Tamb= 25C and Storage Temperature _ UNIT v G v 50 10 _ v -. `CM 2 1~ 1 A Ptot 1 w -55 to +20i- `C Tj:Tstg Range 2N6725 2N6724 -- A _---- ELECTRICAL CHARACTERISTICS (at Tamb = 2tVC unless otherwise stated). PARAMETER SYMBOL 2N6725 2N6724 MIN. MAX. MIN. UNIT CONDITIONS. MAX. ~ollector-Base Breakdown Voltage `( BR)CBO 50 60 v ---- 1~1 p_A, Ipo Collector-Emitter Breakdown Voltage .------ Emitter-Base Breakdown Voltage `( BR)CEO 40 50 v 1~1 mA, IB=O* `(BR)EBO 10 10 v lE=lopA, Zollector Current lCBO @ VC;30V, v&40v, Cut-Off Emitter &t-Off-- Current Collector Base Capacitance "Measured Ratio `CE(satl 1.0 , ~ `BE(sat) `BE(on) ~ 25K 15K 4K `FE CCB --..- 1.0 lEBO Collector-Emitter Saturation Voltage .-- Base-Emitter Saturation Voltage .---- Base-Emitter Turn-On Voltage Static Forward Current Transfer --. t ! l~o @ IE.O lE=o 0.1 <7 ~ PA 1,0 1.5 , 1,0 i 1.5 v v l~;OOmA, lB.2mA* l~lA, iB=2mA* 2.0 2.0 v 1~1 A, lB=2mA* 2.0 2.0 40K 10 25K 15K 4K ;V I&IA, pF , I under pulsed conditions. Pulse width= 300 Vs. Duty cycle S2/. 3-7 l&O VCE=5V" ---- l&OOmA, VCF5V* l~500mA, VCE5V* 1~1 A, VCF5V* 40K ~ 10 VEr8V, VCFIOV, f=l MHz