NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1- MARCH 94 Lx&l
FEATURES
*50 volt VCED
*Gain of 15kat Ic =0.5 Amp
*Ptot= 1Watt
ABSOLUTE MAXIMUM RATINGS. IJ9&&KL
PARAMETER SYMBOL 2N6724 2N6725 UNIT
Collector-Base Voltage ‘CBO 50 Gv
Collector-Emitter Voltage ‘CEO 40 50 v
——
Emitter-Base Voltage ‘EBO _ _ 10 v
——
Peak Pulse Current -.
‘CM 2A
——.
Continuous Collector Current _——
1~ 1A
Power Dissipation at Tamb= 25°C Ptot 1w
Operating and Storage Temperature Range Tj:Tstg —-55 to +20i- ‘C
ELECTRICAL CHARACTERISTICS (at Tamb =2tVC unless otherwise stated).
PARAMETER SYMBOL 2N6724 2N6725 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
~ollector-Base ——
‘( BR)CBO 50 60 v1~1 p_A,Ipo
Breakdown Voltage
Collector-Emitter ‘( BR)CEO 40 50 v1~1 mA, IB=O*
Breakdown Voltage
.———
Emitter-Base ‘(BR)EBO 10 10 v lE=lopA, l~o
Breakdown Voltage —. —..-
Zollector Cut-Off lCBO 1.0 @VC;30V, IE.O
Current 1.0 @v&40v, lE=o
Emitter &t-Off— lEBO 0.1 <7 ~PA VEr8V, l&O
Current ,
Collector-Emitter ‘CE(satl ~1,0 ,1,0 vl~;OOmA, lB.2mA*
Saturation Voltage 1.5 i1.5 vl~lA, iB=2mA*
.—
Base-Emitter ‘BE(sat) 2.0 2.0 v1~1 A, lB=2mA*
Saturation Voltage
.——
Base-Emitter Turn-On ‘BE(on) ~2.0 2.0 ;V I&IA, VCE=5V”
Voltage
Static Forward ‘FE
——
25K 25K l&OOmA, VCF5V*
Current Transfer Ratio 15K 15K l~500mA, VCE5V*
4K 40K 4K 40K 1~1 A, VCF5V*
t
Collector Base CCB !10 ~10 pF VCFIOV, f=l MHz
Capacitance I,
“Measured under pulsed conditions. Pulse width= 300 Vs. Duty cycle S2°/.
3-7
