STK621-140 - International Rectifier

www.irf.com Rev.021805 1

IRAMS10UP60B

Series

10A, 600V

with Internal Shunt Resistor

Integrated Power Hybrid IC for

Appliance Motor Drive Applications.

Description

International Rectifier's IRAMS10UP60B is an Integrated Power Module developed and optimized for elec-

tronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive

technology offers an extremely compact, high performance AC motor-driver in a single isolated package for

a very simple design. An internal shunt is also included and offers easy current feedback and overcurrent

monitor for precise and safe operation. A built-in temperature monitor and over-current protection, along

with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of

protection and fail-safe operation. The integration of the bootstrap diodes for the high-side driver section,

and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the

module and deliver further cost reduction advantages.

PD-95830 RevE

Features

• Internal Shunt Resistor

• Integrated Gate Drivers and Bootstrap Diodes

• Temperature Monitor

• Fully Isolated Package

• Low VCE(on) Non Punch Through IGBT Technology

• Undervoltage lockout for all channels

• Matched propagation delay for all channels

• Schmitt-triggered input logic

• Cross-conduction prevention logic

• Lower di/dt gate driver for better noise

immunity

• Motor Power range 0.4~0.75kW / 85~253 Vac

• Isolation 2000VRMS /1min

• UL certification pending (UL number: E78996)

Abso l u t e Maximu m R atings

Parameter Description Value Units

VCES / VRRM IGBT/Diode Blocking Voltage 600

V+Positive Bus Input Voltage 450

IO @ TC=25°C RMS Phase Current (Note 1) 10

IO @ TC=100°C RMS Phase Current (Note 1) 5

IOPulsed RMS Phase Current (Note 2) 15

FPWM PWM Carrier Frequency 20 kHz

PDPower dissipation per IGBT @ TC =25°C 27 W

VISO Isolation Voltage (1min) 2000 VRMS

TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150

TJ (Driver IC) Operating Junction temperature Range -40 to +150

T Mounting torque Range (M3 screw) 0.5 to 1.0 Nm

Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.

Note 2: tP<100ms; TC=25°C; FPWM=20kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"

°C

IRAMS10UP60B

2www.irf.com

Internal Electrical Schematic - IRAMS10UP60B

23 VS1

24 HO1

25 VB1

1 VCC

2 HIN1

3 HIN2

4 HIN3

5 LIN1

LIN2

LIN3

ITRIP

RCIN

VSS

COM

VB2

HO2

VS2

VB3

HO3

VS3

V- (12)

VB1 (7)

U, VS1 (8)

VB2 (4)

V, VS2 (5)

VB3 (1)

W, VS3 (2)

VCC (14)

VSS (23)

Driver IC

LO1 16

LO3 14

LO2 15

ITRIP (22)

HIN1 (15)

HIN2 (16)

HIN3 (17)

LIN1 (18)

LIN2 (19)

LIN3 (20)

V (10)+

VTH (13) THERMISTOR

FLT-EN(21)

IRAMS10UP60B

www.irf.com 3

Absolute Maximum Ratings (Continu ed)

Symbol Parameter Min Max Units

IBDF

Bootstrap Diode Peak Forward

Current --- 4.5 A

PBR Peak

Bootstrap Resistor Peak Power

(Single Pulse) --- 80 W

VS1,2,3

High side floating supply offset

voltage VB1,2,3 - 25 VB1,2,3 +0.3 V

VB1,2,3 High side floating supply voltage -0.3 600 V

VCC

Low Side and logic fixed supply

voltage -0.3 20 V

VIN, VEN, VITRIP Input voltage LIN, HIN, EN, ITrip -0.3

Lower of

(VSS+15V) or

VCC+0.3V

Conditions

tP= 10ms,

TJ = 150°C, TC=100°C

tP=100µs, TC =100°C

ESR / ERJ series

In vert er S e ction Ele ctr ical Charac t eristics @T J= 25°C

Symbol Parameter Min Typ Max Units

(BR)CES

Collector-to-Emitter Breakdown

Voltage 600 --- --- V

∆V

(BR)CES

/ ∆TTemperature Coefficient of

Breakdown Voltage --- 0.57 --- V/°C

--- 1.70 2.00

--- 2.00 2.40

--- 5 80 V

=5V, V

=600V

--- 10 --- V

=5V, V

=600V, T

=150°C

--- 1.80 2.35

--- 1.30 1.70 I

=5A, T

=150°C

-- -- 1.25

--- --- 1.10

Bootstrap Resistor Value --- 2 --- Ω

∆R

Bootstrap Resistor Tolerance --- --- ±5 %

BUS_TRIP

Current Protection Threshold

(positive going) 13.1 --- 16.4 A

Conditions

CES

Zero Gate Voltage Collector

Current µA

CE(ON)

Collector-to-Emitter Saturation

Voltage V

=5V, I

=1.0mA

(25°C - 150°C)

=-40°C to 125°C

See fig. 2

=5V, I

=250µA

BDFM

Bootstrap Diode Forward Voltage

Drop V

Diode Forward Voltage Drop

=5A, V

=15V, T

=150°C

=5A, V

=15V

=25°C

=5A

=1A

=1A, T

=150°C

IRAMS10UP60B

4www.irf.com

Inverte r S e c tion S witching Ch aracte ristic s @ T J= 25°C

Symbol Parameter Min Typ Max Units

EON Turn-On Switching Loss --- 200 235

EOFF Turn-Off Switching Loss --- 75 100

ETOT Total Switching Loss --- 275 335

EREC Diode Reverse Recovery energy --- 15 25

tRR Diode Reverse Recovery time --- 70 100 ns

EON Turn-On Switching Loss --- 300 360

EOFF Turn-off Switching Loss --- 135 165

ETOT Total Switching Loss --- 435 525

EREC Diode Reverse Recovery energy --- 30 40

tRR Diode Reverse Recovery time --- 100 145 ns

QGTurn-On IGBT Gate Charge --- 29 44 nC

RBSOA Reverse Bias Safe Operating Area

SCSOA Short Circuit Safe Operating Area 10 --- --- µs

ICSC Short Circuit Collector Current --- 47 --- A

TJ=150°C, VP=600V,

V+= 360V,

VCC=+15V to 0V See CT2

TJ=150°C, VP=600V, tSC<10µs

V+= 360V, VGE=15V

VCC=+15V to 0V See CT2

FULL SQUARE

Conditions

IC=5A, V+=400V

VCC=15V, L=2mH

Energy losses include "tail" and

diode reverse recovery

See CT1

IC=5A, V+=400V

VCC=15V, L=2mH, TJ=150°C

Energy losses include "tail" and

diode reverse recovery

See CT1

µJ

IC=15A, V+=400V, VGE=15V

TJ=150°C, IC=5A, VP=600V

V+= 450V

VCC=+15V to 0V See CT3

Recommended Operating Conditions Driver Function

Symbol Definition Min Max Units

VB1,2,3 High side floating supply voltage VS+12 VS+20

VS1,2,3 High side floating supply offset voltage Note 4 450

VCC Low side and logic fixed supply voltage 12 20

VITRIP ITRIP input voltage VSS VSS+5

VIN Logic input voltage LIN, HIN VSS VSS+5 V

VEN Logic input voltage EN VSS VSS+5 V

Note 3: For more details, see IR21363 data sheet

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the

recommende conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased

at 15V differential (Note 3)

Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.

(please refer to DT97-3 for more details)

IRAMS10UP60B

www.irf.com 5

Stat i c Ele ct ri c al Charac t erist i cs Dr iver Fun c t i o n

Symbol Definition Min Typ Max Units

VINH , VENH Logic "0" input voltage 3.0 --- --- V

VINL , VENL Logic "1" input voltage --- --- 0.8 V

VCCUV+, VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V

VCCUV-, VBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V

VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V

VIN,Clamp Input Clamp Voltage (HIN, LIN, ITRIP) IIN=10µA 4.9 5.2 5.5 V

IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA

IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA

ILK Offset Supply Leakage Current --- --- 60 µA

IIN+, IEN+ Input bias current VIN=5V --- 200 300 µA

IIN-, IEN- Input bias current VIN=0V --- 100 220 µA

ITRIP+ ITRIP bias current VITRIP=5V --- 30 100 µA

ITRIP- ITRIP bias current VITRIP=0V --- 0 1 µA

V(ITRIP)I

TRIP threshold Voltage 440 490 540 mV

V(ITRIP, HYS) ITRIP Input Hysteresis --- 70 --- mV

RON,FLT Fault Output ON Resistance --- 50 100 ohm

VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are

applicable to all six channels. (Note 3)

Dy namic E l ec trical Characteristi cs

Driver only timing unless otherwise specified.)

Symbol Parameter Min Typ Max Units Conditions

Input to Output propagation turn-

on delay time (see fig.11) --- 590 --- ns

OFF

Input to Output propagation turn-

off delay time (see fig. 11) --- 700 --- ns

FLIN

Input Filter time (HIN, LIN) 100 200 --- ns V

=0 & V

=5V

BLT-Trip

TRIP

Blancking Time 100 150 ns V

=0 & V

=5V

Dead Time (V

=15V) 220 290 360 ns V

=15V

Matchin

Propa

ation Delay Time

(On & Off) --- 40 75 ns V

= V

= 15V, external dead

time> 400ns

ITrip

Trip

to six switch to turn-off

propagation delay (see fig. 2) --- --- 1.75 µs V

= 15V, I

=10A, V

=400V

--- 7.7 --- T

= 25°C

--- 6.7 --- T

= 100°C

= 15V, I

=10A, V

=400V

Post I

Trip

to six switch to turn-off

clear time (see fig. 2)

FLT-CLR

IRAMS10UP60B

6www.irf.com

Input-Outpu t Logic Level Table

FLT- EN ITRIP HIN1,2,3 LIN1,2,3 U,V,W

1001

V+

10100

1011Off

11XXOff

0XXXOff

U,V,W

Driver

V+

Hin1,2,3

Lin1,2,3

(15,16,17)

(18,19,20)

(8,5,2)

Th erm al and M echanic al Characteri st i c s

Symbol Parameter Min Typ Max Units Conditions

Rth(J-C) Thermal resistance, per IGBT --- 4.2 4.7

Rth(J-C) Thermal resistance, per Diode --- 5.5 6.5

Rth(C-S) Thermal resistance, C-S --- 0.1 ---

CDCreepage Distance 3.2 --- --- mm See outline Drawings

°C/W

Flat, greased surface. Heatsink

compound thermal conductivity

1W/mK

In t ernal N TC - T her m ist or Charac t erist i c s

Parameter Definition Min Typ Max Units Conditions

R25 Resistance 97 100 103 kΩTC = 25°C

R125 Resistance 2.25 2.52 2.80 kΩTC = 125°C

B B-constant (25-50°C) 4165 4250 4335 k R2 = R1e [B(1/T2 - 1/T1)]

Temperature Range -40 125 °C

Typ. Dissipation constant 1 mW/°C TC = 25°C

Internal Current Sensing Resistor - Shunt Characteristics

Symbol Parameter Min Typ Max Units Conditions

RShunt Resistance 33.0 33.3 33.7 mΩTC = 25°C

TCoeff Temperature Coefficient 0 --- 200 ppm/°C

PShunt Power Dissipation --- --- 2.2 W-40°C< TC <100°C

TRange Temperature Range -40 --- 125 °C

IRAMS10UP60B

www.irf.com 7

LIN1,2,3

HIN1,2,3

tfltclr

50%

U,V,W

IBUS_trip

6µs 1µs

IBUS

Sequence of events:

1-2) Current begins to rise

2) Current reaches IBUS_Trip level

2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low

over-current. In case of high current (short circuit), the actual delay will be smaller.

3-4) Delay between driver identification of over-current condition and disabling of all outputs

4) Current starts decreasing, eventually reaching 0

5) Current goes below IBUS_trip, the driver starts its auto-reset sequence

6) Driver is automatically reset and normal operation can resume (over-current condition must be removed

by the time the drivers automatically resets itself)

3 421 5 6

Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output

voltage would be determined by the direction of current flow in the load.

Figure 2. ITrip Timing Waveform

IRAMS10UP60B

8www.irf.com

Module Pin-Out Description

Pin Name Description

1VB3 High Side Floating Supply Voltage 3

2W,VS3 Output 3 - High Side Floating Supply Offset Voltage

3NAnone

4VB2 High Side Floating Supply voltage 2

5V,VS2 Output 2 - High Side Floating Supply Offset Voltage

6NAnone

7VB1 High Side Floating Supply voltage 1

8U, VS1 Output 1 - High Side Floating Supply Offset Voltage

9NAnone

10 V+Positive Bus Input Voltage

11 NA none

12 V-Negative Bus Input Voltage

13 VTH Temperature Feedback

14 VCC +15V Main Supply

15 HIN1 Logic Input High Side Gate Driver - Phase 1

16 HIN2 Logic Input High Side Gate Driver - Phase 2

17 HIN3 Logic Input High Side Gate Driver - Phase 3

18 LIN1 Logic Input Low Side Gate Driver - Phase 1

19 LIN2 Logic Input Low Side Gate Driver - Phase 2

20 LIN3 Logic Input Low Side Gate Driver - Phase 3

21 FLT/Enable Fault Output and Enable Pin

22 ITRIP Current Sense and Itrip Pin

23 VSS Negative Main Supply

IRAMS10UP60B

www.irf.com 9

Typical Application Connection IRAMS10UP60B

1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and

EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-

mance.

2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected be-

tween these terminals should be located very close to the module pins. Additional high frequency capacitors, typically

0.1µF, are strongly recommended.

3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on

IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the

power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3).

4. Current sense signal can be obtained from pin 22 and pin 23. Care should be taken to avoid having inverter current

flowing through pin 22 to mantain required current measurement accuracy.

5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).

6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition

must be cleared before resuming operation.

7. Fault/Enable pin must be pulled-up to +5V.

HIN2

HIN3

LIN1

LIN2

LIN3

HIN1

Date Code Lot #

IRAMS10UP60B

3-Phase AC

MOTOR

BOOT-STRAP

CAPACITORS

Vcc (15 V)

ITRIP

VSS

CONTROLLER

V+

DC BUS

CAPACITORS

Temp

Monitor

Fault

10mF

0.1mF

2.2µF

Fault/Enable

1K +5V

47kohm

+5V +15V

V-

VTH

VB3

VB2

VB1

+5V

VS3

VS2

VS1

PGND

DGND

IRAMS10UP60B

10 www.irf.com

Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency

V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6

Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency

V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6

110100

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

TJ = 150°C

Sinusoidal Modulation

Maximum Output Phase RMS Current - A

Modula tion Fr equenc y - H z

FPWM = 20kHz

FPWM = 16kHz

FPWM = 12kHz

0 2 4 6 8 101214161820

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

TJ = 150°C

Sinusoidal Modulation

Maximum Output Phas e RMS Curre nt - A

PWM Frequency - kHz

TC = 100°C

TC = 110°C

TC = 120°C

IRAMS10UP60B

www.irf.com 11

Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation

V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6

Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation

VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6

0 2 4 6 8 101214161820

Total Power Losses - W

PWM Switching Frequency - kHz

IOUT = 6 ARMS

IOUT = 5 ARMS

IOUT = 4 ARMS

TJ = 150°C

Sinusoidal Modulation

012345678

TJ = 150°C

Sinusoidal Modulation

Total Power Losses - W

Outp ut P ha s e Cu rr ent - A RMS

FPWM = 12 kHz

FPWM = 16 kHz

FPWM = 20 kHz

IRAMS10UP60B

12 www.irf.com

Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase

Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature

012345678

100

110

120

130

140

150

160

TJ = 150°C

Sinusoidal Modulation

Maximum Allowable Case Temper a ture - °C

Ou tput Pha se Cu r rent - ARMS

FPWM = 12 kHz

FPWM = 16 kHz

FPWM = 20 kHz

65 70 75 80 85 90 95 100 105 110 115

100

110

120

130

140

150

160

TJ avg. = 1.2363 x TTherm+ 26.2775

IGBT Junction Temperature - °C

Internal Thermistor Temperature Equivalent Read Out - °C

IRAMS10UP60B

www.irf.com 13

Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency

Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and

Nominal Thermistor Resistance values vs. Temperature Table.

0 5 10 15 20

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0

3.3µF

6.8µF

RBS DBS CBS

RG1

RG2

COM

VCC

HIN

LIN

+15V

VSS

V+

HIN

LIN

U,V,W

GND

VSS

2.2µF

4.7µF

Recommended Boots tr a p Capacitor - µ F

PWM Frequency - kHz

15µF

-40-40 -30 -20-20 -10 00102020 30 4040 50 6060 70 8080 90 100100 110 120120 130

0.00.0

0.5

1.01.0

1.5

2.02.0

2.5

3.03.0

3.5

4.04.0

4.5

5.05.0

+5 V

VThe rm

RTherm

REXT

Thermistor Pin Read - O ut Voltage - V

Thermis tor Temper a tur e - °C

Min

Avg.

Max

THERM

°C Ω°C Ω°C Ω

-40 4397119 25 100000 90 7481

-35 3088599 30 79222 95 6337

-30 2197225 35 63167 100 5384

-25 1581881 40 50677 105 4594

-20 1151037 45 40904 110 3934

-15 846579 50 33195 115 3380

-10 628988 55 27091 120 2916

-5 471632 60 22224 125 2522

0 357012 65 18322 130 2190

5 272500 70 15184 135 1907

10 209710 75 12635 140 1665

15 162651 80 10566 145 1459

20 127080 85 8873 150 1282

IRAMS10UP60B

14 www.irf.com

Figure 11. Switching Parameter Definitions

Figure 11a. Input to Output Propagation

turn-on Delay Time

Figure 11b. Input to Output Propagation

turn-off Delay Time

Figure 11c. Diode Reverse Recovery

50%

HIN/LIN

VCE

HIN/LIN

TOFF

90% IC

10% IC

50%

VCE

VCE IC

HIN/LIN

TON

50%

HIN/LIN 90% IC

10% IC

50%

VCE

HIN/LIN

trr

Irr

IRAMS10UP60B

www.irf.com 15

Figure CT1. Switching Loss Circuit

Figure CT2. S.C.SOA Circuit

Figure CT3. R.B.SOA Circuit

U,V,W

Driver

V+

Lin1,2,3

Hin1,2,3

U,V,W

Driver

V+

Lin1,2,3

Hin1,2,3

10k

5VZD

VCC

U,V,W

Driver

V+

Lin1,2,3

Hin1,2,3

10k

5VZD

VCC

IRAMS10UP60B

16 www.irf.com

Standard pin leadforming option

Notes:

Dimensions in mm

1- Marking for pin 1 identification

2- Product Part Number

3- Lot and Date code marking

4- Tollerances ±0.5mm, unless otherwise stated

For mounting instruction, see AN1049

027-E2D24

IRAMS10UP60B

note 1

note 2

note 3

Package Outline

IRAMS10UP60B

www.irf.com 17

Data and Specifications are subject to change without notice

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information

07/05

Package Outline

For mounting instruction see AN-1049

Pin leadforming option -2

Notes:

Dimensions in mm

1- Marking for pin 1 identification

2- Product Part Number

3- Lot and Date code marking

4- Tollerances ±0.5mm, unless otherwise stated

027-E2D24

note 1

IRAMS10UP60B-2

note 2

note 3