AUIRF3805S-7P
AUIRF3805L-7P
HEXFET® Power MOSFET
07/20/10
www.irf.com 1
PD - 96318
AUTOMOTIVE GRADE
D2Pa k 7 P i n
AUIRF3805S-7P
GDS
Gate Drain Source
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
TO-263CA 7 Pin
AUIRF3805L-7P
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
V
(BR)DSS
55V
R
DS(on)
typ. 2.0mΩ
max. 2.6mΩ
i
I
D
240A
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
D
GSSSS
S
D
GSSSS
S
P
arameter
U
n
i
ts
I
D
@ T
C
=
25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
=
100°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
=
25°C
Continuous Drain Current, V
GS
@ 10V (Packa
g
e Limited)
I
DM
Pulsed Drain Current
c
D
@T
C
=
25°C
Maximum Power Dissi
p
ation
W
Linear Derating Factor W/°C
GS
Gate-to-Source Voltage
AS
Sin
g
le Pulse Avalanche Ener
gy
(
Thermall
y
Limited
)
j
AS
(t
es
t
e
d)
Single Pulse Avalanche Energy Tested Value
d
I
AR
Avalanche Current
c
AR
Repetitive Avalanche Energy
c
m
J
dv/dt Peak Diode Recover
y
dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Th
erma
l R
es
i
s
t
ance
P
arameter
Ty
p.
M
ax.
U
n
i
ts
R
θJC
Junction-to-Case
h
––– 0.50
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient
(
PCB Mount, stead
y
state
)
g
––– 40
10 lbf•in (1.1N•m)
300
2.0
± 20
440
680
See Fi
g
.12a,12b,15,16
300
-55 to + 175
2.3
Max.
240
170
1000
160 A
°C
mJ
°C/W
AUIRF3805S/L-7P
2www.irf.com
S
D
G
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
This value determined from sample failure
population starting TJ = 25°C, L=0.043mH,
RG = 25Ω, IAS = 140A,VGS =10V.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
Solder mounted on IMS substrate.
Limited by TJmax starting TJ = 25°C, L=0.043mH,
RG = 25Ω, IAS = 140A,VGS =10V.Part not recommended for
use above this value.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e55––––––V
∆ΒV
DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.05 ––– V/°C
R
DS(on)
SMD Static Drain-to-Source On-Resistance ––– 2.0 2.6 mΩ
V
GS(th)
Gate Threshold Volta
g
e2.0–––4.0V
g
fs Forward Transconductance 110 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
Q
g
Total Gate Char
g
e ––– 130 200
Q
gs
Gate-to-Source Char
g
e–––53–––
Q
gd
Gate-to-Drain ("Miller") Char
g
e–––49–––
t
d(on)
Turn-On Dela
y
Time –––23–––
t
r
Rise Time ––– 130 –––
t
d(off)
Turn-Off Dela
y
Time –––80–––
t
f
Fall Time –––52–––
L
D
Internal Drain Inductance Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 7820 –––
C
oss
Output Capacitance ––– 1260 –––
C
rss
Reverse Transfer Capacitance ––– 610 –––
C
oss
Output Capacitance ––– 4310 –––
C
oss
Output Capacitance ––– 980 –––
C
oss
eff. Effective Output Capacitance
f
––– 1540 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time –––4568ns
Q
rr
Reverse Recover
y
Char
g
e ––– 35 53 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 140A
e
T
J
= 25°C, I
F
= 140A, V
DD
= 28V
di/dt = 100A/
µ
s
e
T
J
= 25°C, I
S
= 140A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 10V
e
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 44V
ƒ = 1.0MHz, See Fig. 5
R
G
= 2.4Ω
I
D
= 140A
V
DS
= 25V, I
D
= 140A
V
DD
= 28V
I
D
= 140A
V
GS
= 20V
V
GS
= -20V
V
DS
= 44V
V
GS
= 10V
e
Conditions
µA
nA
nC
ns
nH
pF
A
––– –––
––– –––
–––
–––
–––
–––
240
1000
4.5
7.5
AUIRF3805S/L-7P
www.irf.com 3
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
Moisture Sensitivity Level 7L-D2
PAK MSL1 , 260°C
RoHS Compliant Yes
ESD
Machine Model
Class M4(+/-425V)
(per AEC-Q101-002)
Human Body Model
Class H3A(+/-4000V)
(per AEC-Q101-001)
Charged Device Model
Class C5 (+/-1000V)
(per AEC-Q101-005)
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
AUIRF3805S/L-7P
4www.irf.com
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
4.5V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60µs PULSE WIDTH
0 20 40 60 80 100 120
ID,Drain-to-Source Current (A)
0
50
100
150
200
250
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
AUIRF3805S/L-7P
www.irf.com 5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 50 100 150
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 64V
VDS= 40V
ID= 140A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
10000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
AUIRF3805S/L-7P
6www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 140A
VGS = 10V
1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0794 0.000192
0.1474 0.000628
0.2737 0.014012
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
50
100
150
200
250
ID, Drain Current (A)
AUIRF3805S/L-7P
www.irf.com 7
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
500
1000
1500
2000
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 21A
37A
BOTTOM 140A
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 1.0A
AUIRF3805S/L-7P
8www.irf.com
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 140A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj = 150°C and
Tstart =25°C (Single Pulse)
AUIRF3805S/L-7P
www.irf.com 9
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRF3805S/L-7P
10 www.irf.com
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUIRF3805S-7
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF3805S/L-7P
www.irf.com 11
TO-263CA 7 Pin Long Leads Package Outline
Dimensions are shown in millimeters (inches)
TO-263CA - 7 Pin Part Marking Information
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUIRF3805L-7
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF3805S/L-7P
12 www.irf.com
D2Pak - 7 Pin Tape and Reel
AUIRF3805S/L-7P
www.irf.com 13
Ordering Information
Base
p
art Packa
g
e T
yp
e Standard Pac
k
Com
p
lete Part Number
Form Quantit
y
AUIRF3805L-7P TO-262 Tube 50 AUIRF3805L-7P
AUIRF3805S-7P D2Pak Tube 50 AUIRF3805S-7P
Tape and Reel Left 800 AUIRF3805S-7PTRL
Tape and Reel Right 800 AUIRF3805S-7PTRR
AUIRF3805S/L-7P
14 www.irf.com
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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
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