AUTOMOTIVE GRADE PD - 96318 AUIRF3805S-7P AUIRF3805L-7P HEXFET(R) Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS 55V RDS(on) typ. G max. 2.6m S S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description ID D G S S S S S GS D2Pak 7 Pin SS S S TO-263CA 7 Pin AUIRF3805L-7P AUIRF3805S-7P Absolute Maximum Ratings i 240A D Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. 2.0m G D S Gate Drain Source Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw c c Thermal Resistance RJC RCS RJA RJA h d c e Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state) HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com g j 240 170 160 1000 300 2.0 20 440 680 See Fig.12a,12b,15,16 2.3 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 10 lbf*in (1.1N*m) Typ. Max. Units --- 0.50 --- --- 0.50 --- 62 40 C/W 1 07/20/10 AUIRF3805S/L-7P Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS VDSS/TJ RDS(on) SMD VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage gfs IDSS Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 55 --- --- 2.0 110 --- --- --- --- --- 0.05 --- --- 2.0 --- --- --- --- --- --- 2.6 4.0 --- 20 250 200 -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 140A V VDS = VGS, ID = 250A S VDS = 25V, ID = 140A VDS = 55V, VGS = 0V A VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V nA VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- --- 130 53 49 23 130 80 52 200 --- --- --- --- --- --- --- 4.5 --- nC ns f 7.5 --- --- --- --- --- --- --- 7820 1260 610 4310 980 1540 --- --- --- --- --- --- e e nH --- Conditions ID = 140A VDS = 44V VGS = 10V VDD = 28V ID = 140A RG = 2.4 VGS = 10V Between lead, pF D 6mm (0.25in.) from package G S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Min. Typ. Max. Units --- --- 240 --- --- 1000 --- --- --- --- 45 35 1.3 68 53 Conditions MOSFET symbol A V ns nC D showing the integral reverse G S p-n junction diode. TJ = 25C, IS = 140A, VGS = 0V TJ = 25C, IF = 140A, VDD = 28V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by This is applied to D 2Pak, when mounted on 1" square PCB max. junction temperature. (See fig. 11). ( FR-4 or G-10 Material ). For recommended footprint and This value determined from sample failure soldering techniques refer to application note #AN-994. population starting TJ = 25C, L=0.043mH, RG = 25, IAS = 140A,VGS =10V. R is measured at TJ of approximately 90C. Pulse width 1.0ms; duty cycle 2%. Solder mounted on IMS substrate. Coss eff. is a fixed capacitance that gives the same Limited by TJmax starting TJ = 25C, L=0.043mH, charging time as Coss while VDS is rising from 0 to RG = 25, IAS = 140A,VGS =10V.Part not recommended for 80% VDSS. use above this value. 2 www.irf.com AUIRF3805S/L-7P Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 7L-D2 PAK MSL1 , 260C Class M4(+/-425V) (per AEC-Q101-002) Class H3A(+/-4000V) (per AEC-Q101-001) Class C5 (+/-1000V) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF3805S/L-7P 10000 10000 1000 BOTTOM 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1000 10 1 4.5V BOTTOM 100 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 0.1 0.1 1 10 1 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 10 100 1000 Fig 2. Typical Output Characteristics 1000 250 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current () 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 175C 100 TJ = 25C 10 VDS = 25V 60s PULSE WIDTH 1.0 TJ = 25C 200 150 T J = 175C 100 50 V DS = 10V 380s PULSE WIDTH 0 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 0 20 40 60 80 100 120 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com AUIRF3805S/L-7P 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 140A VGS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss Crss 1000 100 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) T J = 175C 100 T J = 25C 10 1 ID, Drain-to-Source Current (A) 1000 100 150 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 10000 50 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ISD, Reverse Drain Current (A) VDS= 64V VDS= 40V 10.0 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 1msec 100 10msec 10 DC 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF3805S/L-7P 250 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID, Drain Current (A) 200 150 100 50 0 25 50 75 100 125 150 ID = 140A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 0 20 40 60 80 100120140160180 T C , Case Temperature (C) T J , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 J 1 1 R2 R2 2 2 Ci= i/Ri Ci i/Ri R3 R3 3 C 3 Ri (C/W) 0.0794 i (sec) 0.000192 0.1474 0.2737 0.000628 0.014012 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF3805S/L-7P 15V VDS D.U.T RG + V - DD IAS VGS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 2000 DRIVER L ID TOP 21A 37A BOTTOM 140A 1500 1000 500 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 5.0 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) VG 4.5 4.0 3.5 3.0 2.5 ID = 250A ID = 1.0mA ID = 1.0A 2.0 1.5 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com Fig 14. Threshold Voltage vs. Temperature 7 AUIRF3805S/L-7P 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 140A 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 8 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF3805S/L-7P D.U.T Driver Gate Drive + - P.W. + D.U.T. ISD Waveform Reverse Recovery Current + V DD * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF3805S/L-7P D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) D2Pak - 7 Pin Part Marking Information Part Number AUIRF3805S-7 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF3805S/L-7P TO-263CA 7 Pin Long Leads Package Outline Dimensions are shown in millimeters (inches) TO-263CA - 7 Pin Part Marking Information Part Number AUIRF3805L-7 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF3805S/L-7P D2Pak - 7 Pin Tape and Reel 12 www.irf.com AUIRF3805S/L-7P Ordering Information Base part AUIRF3805L-7P AUIRF3805S-7P www.irf.com Package Type TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRF3805L-7P AUIRF3805S-7P AUIRF3805S-7PTRL AUIRF3805S-7PTRR 13 AUIRF3805S/L-7P IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 14 www.irf.com