SQJ140EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PowerPAK(R) SO-8L * TrenchFET(R) Gen IV power MOSFET * AEC-Q101 qualified * 100 % Rg and UIS tested D * Qgd/Qgs ratio < 1 optimizes switching characteristics 6. 15 m m 1 4 G m 0m 4.9 Top View 3 S 2 S 1 S * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V ID (A) 266 Configuration Package G 0.0021 Single N-Channel MOSFET PowerPAK SO-8L S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS 20 Continuous drain current TC = 25 C TC = 125 C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 C TC = 125 C Operating junction and storage temperature range ID 266 IS 239 385 IAS 35 PD TJ, Tstg Soldering recommendations (peak temperature) c V 154 IDM EAS UNIT 61 263 88 -55 to +175 260 A mJ W C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL LIMIT RthJA 42 RthJC 0.57 UNIT C/W Notes a. Pulse test; pulse width 300 s, duty cycle 2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S20-0117-Rev. A, 02-Mar-2020 Document Number: 77368 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ140EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = 250 A 40 - - VGS(th) VDS = VGS, ID = 250 A 2.5 3.0 3.5 VDS = 0 V, VGS = 20 V IGSS IDSS ID(on) RDS(on) gfs - - 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 C - - 250 VGS = 10 V VDS 5 V 30 - - VGS = 10 V ID = 15 A - 0.0017 0.0021 VGS = 10 V ID = 15 A, TJ = 125 C - - 0.0032 VGS = 10 V ID = 15 A, TJ = 175 C - - 0.0037 - 55 - VDS = 15 V, ID = 10 A V nA A A S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 30 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 0.67 ID 30 A, VGEN = 10 V, Rg = 1 tf - 2964 3855 - 963 1255 - 48 62 - 49.2 64 - 14.6 - - 11.8 - 0.8 1.85 3 - 15 22 - 19 28 - 26 40 - 9 13 pF nC ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = 15 A, VGS = 0 V IF = 10 A, di/dt = 100 A/s - - 385 - - 1.1 V - 52 67 ns - 40 59 nC Reverse recovery fall time ta - 22 33 Reverse recovery rise time tb - 23 35 IRM(REC) - 1.5 2.2 Body diode peak reverse recovery current A ns A Notes a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0117-Rev. A, 02-Mar-2020 Document Number: 77368 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ140EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 500 60 10000 10000 VGS = 10 V thru 7 V 48 200 VGS = 5 V 100 100 1000 36 TC = -55 C TC = 25 C 24 100 12 VGS = 4 V TC = 125 C 0 0 10 0 1.6 3.2 4.8 6.4 10 0 8 2 4 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 250 10000 TC = 125 C 150 1st line 2nd line 1000 TC = 25 C TC = -55 C 100 50 2nd line gfs - Transconductance (S) TC = 25 C 100 8 VDS - Drain-to-Source Voltage (V) 200 2nd line ID - Drain Current (A) 1st line 2nd line 1000 2nd line ID - Drain Current (A) VGS = 6 V 300 1st line 2nd line 2nd line ID - Drain Current (A) 400 200 150 TC = -55 C 100 50 TC = 125 C 0 0 10 2 4 6 0 8 20 40 VGS - Gate-to-Source Voltage (V) 100 000 10000 10 000 0.004 1000 0.003 VGS = 7.5 V 100 0.002 VGS = 10 V 72 96 ID - Drain Current (A) On-Resistance vs. Drain Current S20-0117-Rev. A, 02-Mar-2020 Ciss 1000 1000 Coss 100 100 Crss 10 10 48 2nd line C - Capacitance (pF) 2nd line RDS(on) - On-Resistance () 10000 24 100 Axis Title Axis Title 0 80 Transconductance Transfer Characteristics 0.001 60 ID - Drain Current (A) 1st line 2nd line 0 120 1 10 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 77368 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ140EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 56 10000 1000 6 4 100 2 0 10000 ID = 1 mA 54.2 1000 52.4 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) ID = 30 A VDS = 20 V 8 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 10 50.6 100 48.8 10 0 20 40 47 60 10 -50 -25 Qg - Total Gate Charge (nC) 2nd line 0 25 50 TJ - Junction Temperature (C) Gate Charge Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 2.1 100 10000 10000 ID = 4 A 1000 1.3 100 0.9 0.5 0 25 50 TJ = 150 C 1000 1 100 TJ = 25 C 0.1 0.01 10 -50 -25 10 1st line 2nd line VGS = 10 V 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 75 100 125 150 175 75 100 125 150 175 10 0.2 0.3 0.5 0.6 0.8 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 0.9 Axis Title 10000 0.008 1000 0.006 1st line 2nd line 2nd line RDS(on) - On-Resistance () 0.010 TJ = 150 C 0.004 100 0.002 TJ = 125 C TJ = 25 C 0.000 10 4 5.2 6.4 7.6 8.8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to Source Voltage S20-0117-Rev. A, 02-Mar-2020 Document Number: 77368 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ140EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title IDM limited 1000 10000 100 1000 10 100 s 1 ms 100 10 ms Limited by RDS(on) a 1 TC = 25 C, single pulse 0.1 0.01 1st line 2nd line 2nd line ID - Drain Current (A) ID limited BVDSS limited 100 ms 1 s, 10 10s, DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified Axis Title 0.5 10000 1000 -0.3 ID = 5 mA 1st line 2nd line 2nd line VGS(th) - Variance (V) 0.1 -0.7 ID = 250 A 100 -1.1 -1.5 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Threshold Voltage S20-0117-Rev. A, 02-Mar-2020 Document Number: 77368 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ140EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title 10000 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 1000 0.1 0.05 1st line 2nd line 0.1 0.02 Single pulse 100 0.01 0.001 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title Duty Cycle = 0.5 0.2 0.1 0.1 1000 0.05 0.02 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 1 0.01 100 0.001 0.0001 0.0001 Single pulse 10 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77368. S20-0117-Rev. A, 02-Mar-2020 Document Number: 77368 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK(R) SO-8L Case Outline 3 b2 D6 D5 E1 E3 E2 E E4 E5 W4 W1 D5 z2 A2 A1 L 0.2 Gauge line L1 c b b1 e z1 D1 D2 Backside view (single) A Topside view DIM. MIN. A 1.00 A1 0.00 A2 0.40 b 0.33 b1 0.43 b2 4.00 c 0.15 D1 4.80 D2 3.86 D5 0.51 D6 2.64 e E 6.05 E1 4.27 E2 3.18 E3 3.48 E4 2.72 E5 0.71 L 0.62 L1 0.92 W1 0.31 W4 0.31 z1 0.37 z2 0.99 0 ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6067 Note * Millimeter will govern Revison: 05-Aug-2019 MILLIMETERS NOM. 1.05 --0.45 0.41 0.51 4.10 0.20 4.90 3.96 0.61 2.74 1.27 BSC 6.15 4.37 3.28 3.58 2.82 0.81 0.72 1.07 0.41 0.36 0.47 1.09 --- INCHES MAX. 1.10 0.127 0.50 0.49 0.59 4.20 0.25 5.00 4.06 0.71 2.84 MIN. 0.039 0.000 0.016 0.013 0.017 0.157 0.006 0.189 0.152 0.020 0.104 6.25 4.47 3.38 3.68 2.92 0.91 0.82 1.22 0.51 0.41 0.57 1.19 5 0.238 0.168 0.125 0.137 0.107 0.028 0.024 0.036 0.012 0.012 0.015 0.039 0 NOM. 0.041 --0.018 0.016 0.020 0.161 0.008 0.193 0.156 0.024 0.108 0.050 BSC 0.242 0.172 0.129 0.141 0.111 0.032 0.028 0.042 0.016 0.014 0.019 0.043 --- MAX. 0.043 0.005 0.020 0.019 0.023 0.165 0.010 0.197 0.160 0.028 0.112 0.246 0.176 0.133 0.145 0.115 0.036 0.032 0.048 0.020 0.016 0.022 0.047 5 Document Number: 76666 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix 0.3 (0.012) 3.48 (0.137) 6.73 (0.265) 2.28 (0.111) 0.76 (0.030) 4 (R x R 0. 0 00 .2 8) 5.3 (0.209) 2.7 (0.106) 0.71 (0.028) Recommended Land Pattern PowerPAK(R) SO-8L Single Short Ear 16 (R x 0. R0 00 .1 4) 1.1 (0.043) 3.96 (0.156) 1.27 (0.050) 0.68 (0.027) Dimensions in Millimeters (Inches) Revision: 09-Jul-2020 Document Number: 78020 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000