SQJ140EP
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S20-0117-Rev. A, 02-Mar-2020 1Document Number: 77368
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Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Gen IV power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
•Q
gd/Qgs ratio < 1 optimizes switching
characteristics
• Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
PRODUCT SUMMARY
VDS (V) 40
RDS(on) (Ω) at VGS = 10 V 0.0021
ID (A) 266
Configuration Single
Package PowerPAK SO-8L
PowerPAK® SO-8L
Bottom ViewTop View
2
S
3
S
4
G
1
S
D
1
6.15 mm
4.90 mm
1
6.15 m
m
90 mm
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 40 V
Gate-source voltage VGS ± 20
Continuous drain current TC = 25 °C ID
266
A
TC = 125 °C 154
Continuous source current (diode conduction) IS239
Pulsed drain current aIDM 385
Single pulse avalanche current L = 0.1 mH IAS 35
Single pulse avalanche energy EAS 61 mJ
Maximum power dissipation aTC = 25 °C PD
263 W
TC = 125 °C 88
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
Soldering recommendations (peak temperature) c260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount b RthJA 42 °C/W
Junction-to-case (drain) RthJC 0.57
SQJ140EP
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S20-0117-Rev. A, 02-Mar-2020 2Document Number: 77368
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 40 - - V
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5
Gate-source leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VGS = 0 V VDS = 40 V - - 1
μA VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 40 V, TJ = 175 °C - - 250
On-state drain current a I
D(on) V
GS = 10 V VDS ≥ 5 V 30 - - A
Drain-source on-state resistance a R
DS(on)
VGS = 10 V ID = 15 A - 0.0017 0.0021
ΩVGS = 10 V ID = 15 A, TJ = 125 °C - - 0.0032
VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.0037
Forward transconductance b gfs VDS = 15 V, ID = 10 A - 55 - S
Dynamic b
Input capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 2964 3855
pF Output capacitance Coss - 963 1255
Reverse transfer capacitance Crss -4862
Total gate charge c Qg
VGS = 10 V VDS = 20 V, ID = 30 A
-49.264
nC Gate-source charge c Qgs -14.6-
Gate-drain charge c Qgd -11.8-
Gate resistance Rgf = 1 MHz 0.8 1.85 3 Ω
Turn-on delay time c td(on)
VDD = 20 V, RL = 0.67 Ω
ID ≅ 30 A, VGEN = 10 V, Rg = 1 Ω
-1522
ns
Rise time c tr -1928
Turn-off delay time c td(off) -2640
Fall time c tf -913
Source-Drain Diode Ratings and Characteristics b
Pulsed current a ISM --385A
Forward voltage VSD IF = 15 A, VGS = 0 V - - 1.1 V
Body diode reverse recovery time trr
IF = 10 A, di/dt = 100 A/μs
-5267ns
Body diode reverse recovery charge Qrr -4059nC
Reverse recovery fall time ta-2233
ns
Reverse recovery rise time tb-2335
Body diode peak reverse recovery
current IRM(REC) -1.52.2A
SQJ140EP
www.vishay.com Vishay Siliconix
S20-0117-Rev. A, 02-Mar-2020 3Document Number: 77368
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
10
100
1000
10000
0
100
200
300
400
500
0 1.6 3.2 4.8 6.4 8
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
V
GS
= 10 V thru 7 V
V
GS
= 4 V
V
GS
= 5 V
V
GS
= 6 V
10
100
1000
10000
0
50
100
150
200
02468
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= -55 °C
T
C
= 125 °C
10
100
1000
10000
0.001
0.002
0.003
0.004
024487296120
Axis Title
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
V
GS
= 10 V
V
GS
= 7.5 V
10
100
1000
10000
0
12
24
36
48
60
02468
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
T
C
= 25 °C
TC= -55 °C
TC= 125 °C
0
50
100
150
200
250
0 20406080100
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
TC= -55 °C
TC= 25 °C TC= 125 °C
10
100
1000
10000
1
10
100
1000
10 000
100 000
0 10203040
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
Ciss
Crss
Coss
SQJ140EP
www.vishay.com Vishay Siliconix
S20-0117-Rev. A, 02-Mar-2020 4Document Number: 77368
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to Source Voltage
10
100
1000
10000
0
2
4
6
8
10
0204060
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 30 A
VDS = 20 V
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
I
D
= 4 A
V
GS
= 10 V
10
100
1000
10000
47
48.8
50.6
52.4
54.2
56
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
I
D
= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
0.20.30.50.60.80.9
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ= 25 °C
TJ= 150 °C
10
100
1000
10000
0.000
0.002
0.004
0.006
0.008
0.010
4 5.2 6.4 7.6 8.8 10
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
SQJ140EP
www.vishay.com Vishay Siliconix
S20-0117-Rev. A, 02-Mar-2020 5Document Number: 77368
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
Threshold Voltage
10
100
1000
10000
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
I
DM
limited
T
C
= 25 °C,
single pulse
Limited by R
DS(on) a
BVDSS limited
10 ms
100 ms
1 ms
100 μs
1 s, 10 s, DC
I
D
limited
10
100
1000
10000
-1.5
-1.1
-0.7
-0.3
0.1
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) - Variance (V)
TJ- Junction Temperature (°C)
I
D
= 5 mA
ID= 250 μA
SQJ140EP
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S20-0117-Rev. A, 02-Mar-2020 6Document Number: 77368
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77368.
10
100
1000
10000
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
10
100
1000
10000
0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
Package Information
www.vishay.com Vishay Siliconix
Revison: 05-Aug-2019 1Document Number: 76666
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PowerPAK® SO-8L Case Outline 3
Note
• Millimeter will govern
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.05 1.10 0.039 0.041 0.043
A1 0.00 --- 0.127 0.000 --- 0.005
A2 0.40 0.45 0.50 0.016 0.018 0.020
b 0.33 0.41 0.49 0.013 0.016 0.019
b1 0.43 0.51 0.59 0.017 0.020 0.023
b2 4.00 4.10 4.20 0.157 0.161 0.165
c 0.15 0.20 0.25 0.006 0.008 0.010
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D5 0.51 0.61 0.71 0.020 0.024 0.028
D6 2.64 2.74 2.84 0.104 0.108 0.112
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 3.18 3.28 3.38 0.125 0.129 0.133
E3 3.48 3.58 3.68 0.137 0.141 0.145
E4 2.72 2.82 2.92 0.107 0.111 0.115
E5 0.71 0.81 0.91 0.028 0.032 0.036
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
W1 0.31 0.41 0.51 0.012 0.016 0.020
W4 0.31 0.36 0.41 0.012 0.014 0.016
z1 0.37 0.47 0.57 0.015 0.019 0.022
z2 0.99 1.09 1.19 0.039 0.043 0.047
0° --- 5° 0° --- 5°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6067
b b1 e
D1
E1
b2
D2
E2
E
A
W1
z1
E3
D6
E5
E4 z2
W4
D5 D5
A2
A1
L1
L
c
0.2 Gauge line
ɵ
Topside view Backside view (single)
PAD Pattern
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Revision: 09-Jul-2020 1Document Number: 78020
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Recommended Land Pattern PowerPAK® SO-8L Single Short Ear
Dimensions in Millimeters (Inches)
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
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