Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 6
1Publication Order Number:
DAN222/D
DAN222G
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT--416/SC--75 package which is designed
for low power surface mount applications, where board space is at a
premium.
Features
Fast trr
Low CD
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA=25C)
Rating Symbol Value Unit
Reverse Voltage VR80 Vdc
Peak Reverse Voltage VRM 80 Vdc
Forward Current IF100 mAdc
Peak Forward Current IFM 300 mAdc
Peak Forward Surge Current (Note 1) IFSM 2.0 Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation PD150 mW
Junction Temperature TJ150 C/W
Storage Temperature Range Tstg -- 5 5 t o
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 mS
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Device Package Shipping†
ORDERING INFORMATION
SC--75/SOT--416
CASE 463
STYLE 3
CATHODE
3
12
ANODE
1
DAN222T1G 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
N9 M G
G
N9 = Specific Device Code
M = Date Code*
G= Pb--Free Package
1
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
DAN222G SC--75/SOT--416
(Pb--Free)
3000/Tape & Reel
SC--75/SOT--416
(Pb--Free)
DAN222G
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2
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current IRVR=70V -- 0.1 mAdc
Forward Voltage VFIF= 100 mA -- 1.2 Vdc
Reverse Breakdown Voltage VRIR= 100 mA80 -- Vdc
Diode Capacitance CDVR=6.0V,f=1.0MHz -- 3.5 pF
Reverse Recovery Time trr (Note 2) IF=5.0mA,V
R=6.0V,R
L= 100 Ω,I
rr =0.1I
R-- 4.0 ns
2. trr Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
IF, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
TA= 150C
TA= 125C
TA=85C
TA=55C
TA=25C
IR, REVERSE CURRENT (A)
TA=85C
TA=--40C
TA=25C
1.0
0
0.9
0.8
0.7
0.6 2468
VR, REVERSE VOLTAGE (VOLTS)
CD, DIODE CAPACITANCE (pF)
DAN222G
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3
A
RL
trtp
t
10%
90%
VRtp=2ms
tr=0.35ns
IF
trr
t
Irr =0.1I
R
IF=5.0mA
VR=6V
RL= 100 Ω
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the DAN222
DAN222G
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4
PACKAGE DIMENSIONS
SC--75/SOT--416
CASE 463--01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
-- E --
-- D --
b
e
3PL
0.20 (0.008) E
C
L
A
A1
3
2
1
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
mm
inches
SCALE 10:1
0.356
0.014
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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DAN222/D
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