SFH 309 P
SFH 309 PFA
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
SFH 309 P SFH 309 PFA
2001-02-22 1
Wesentliche Merkmale
Speziell geeignet für Anwendungen im Bereich
von 380 nm bis 1180 nm (SFH 309 P) und bei
880 nm (SFH 309 PFA)
Hohe Linearität
3 mm plane Plastikbauform im LED-Gehäuse
Gruppiert lieferbar
Anwendungen
Lichtschranken für Gleich- und
Wechsellichtbetrieb
Industrieelektronik
„Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
SFH 309 P Q62702-P245
SFH 309 PFA Q62702-P246
Features
Especially suitable for applications from
380 nm to 1180 nm (SFH 309 P) and of 880 nm
(SFH 309 PFA)
High linearity
3 mm LED plastic package
Available in groups
Applications
Photointerrupters
Industrial electronics
For control and drive circuits
2001-02-22 2
SFH 309 P, SFH 309 PFA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg 40 + 100 °C
Löttemperatur bei Tauchlötung
Lötstelle 2 mm vom Gehäuse, Lötzeit t 5 s
Dip soldering temperature 2 mm distance
from case bottom, soldering time t 5 s
TS260 °C
Löttemperatur bei Kolbenlötung
Lötstelle 2 mm vom Gehäuse, Lötzeit t 3 s
Iron soldering temperature 2 mm distance
from case bottom, soldering time t 3 s
TS300 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector current IC15 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current ICS 75 mA
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 165 mW
Wärmewiderstand
Thermal resistance RthJA 450 K/W
SFH 309 P, SFH 309 PFA
2001-02-22 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 309 P SFH 309 PFA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 860 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ380 1180 730 1120 nm
Bestrahlungsempfindl iche Fläche (220 µm)
Radiant sensitive area A0.038 0.038 mm2
Abmessungen der Chipfläche
Dimensions of chip area L×B
L×W0.45 ×0.45 0.45 ×0.45 mm ×mm
Abstand Chipoberfläche zu
Gehäuseoberfläche
Distance chip front to case surface
H0.4 0.8 0.4 0.8 mm
Halbwinkel
Half angle ϕ± 75 ± 75 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E=0
Capacitance CCE 5.0 5.0 pF
Dunkelstrom
Dark current
VCE = 25 V, E=0
ICEO 1 (200) 1 (200) nA
2001-02-22 4
SFH 309 P, SFH 309 PFA
Directional Characteristics Srel = f (ϕ)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
SFH 309 P:
Ev = 1000 Ix, Normlicht/standard light A,
VCE = 5 V
IPCE
IPCE
63
420
µA
µA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 k
tr, tf6µs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = 20 µA, Ee = 0.5 mW/cm2
VCEsat 150 mV
SFH 309 P, SFH 309 PFA
2001-02-22 5
Relati ve Sp ectral Sensi ti vi ty,
SFH 309 P Srel = f (λ)
Tota l Power Dissipati o n
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 25 V, E = 0
λ
OHF01121
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
T
OHF01530
A
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
-25
nA
0 25 50 75 100
˚C
Relative Spectral S ensitivity,
SFH 309 PFA Srel = f (λ)
Photocurrent
IPCE = f (VCE), Ee = Par ame te r
Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
V
OHF01529
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
Photocurrent
IPCE /IPCE25° = f (TA), VCE = 5 V
V
OHF01527
CE
CEO
Ι
-3
10
10
-2
10
-1
10
0
10
1
0 5 10 15 20 25 30 35V
nA
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
2001-02-22 6
SFH 309 P, SFH 309 PFA
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follo w s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention ple ase!
The inform at ion describe s the type of component and sha ll not be c ons idered as assur ed characteris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endangered.
0.6 (0.024)
0.4 (0.016)
4.0 (0.157)
3.6 (0.142)
ø3.1 (0.122)
ø2.9 (0.114)
2.0 (0.079)
1.7 (0.067)
3.1 (0.122)
2.5 (0.098)
3.5 (0.138)
4.5 (0.177)
4.1 (0.161)
1.8 (0.071)
1.2 (0.047)
29 (1.142)
27 (1.063)
2.54 (0.100)
spacing
0.7 (0.028)
0.4 (0.016)
Chip position
Area not flat
GEOY6446
0.4 (0.016)
0.8 (0.031)
Emitter