Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V N-CHANNEL ENHANCEMENT MODE roston = 3Q Oo Features: a SOA is power-dissipation limited m Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance & Majority carrier device $s 92CS-33741 TERMINAL DIAGRAM The 2N6794 is an n-channel enhancement-mode silicon- gate power MOS field-effect transistor designed for appli- cations such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipo- lar switching transistors requiring high speed and low gate- drive power. This type can be operated directly from an integrated circuit. The 2N6794 is supplied in the JEDEC TO-205AF metal package. DRAIN (CASE) JEDEC TO-20SAF MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): *DRAIN-SOURCE VOLTAGE, Vos ...... 0: ccc cece ete ee ene e nn eee EERE eee ete been Eee e neta eeees S00Vv "DRAIN-GATE VOLTAGE (Ras = 20 KQ), Vor .... 2. ec cece ct ee cnn eee eee een nee nee eee t ee trees S00V *GATE-SOURCE VOLTAGE, Vas 2... ccc ccc cece eee ee en ene ne tA eR EEE E OEE rete EEE eee eee eee eee +20V *DRAIN CURRENT: RMS Continuous, Ip ALT = 25PC Loic ccc ccc cee ene e nee e EEE Ree eRe EEE E Cree EE Ene Eee Eee renee Eee bees 1.5A 7X oat ean | 0 ka 1A Tad Ute fal CoC a 6.5A SOURCE CURRENT: CONTINUOUS, Is 0. nee En ERR e EERE REESE ERED EE ECON eee E EEE Eee eee EERE EEE 1.5A CSTE t= e fal (=) a 6.5A POWER DISSIPATION, Pr: FS Si Re -2 ek 20W ADOVE Ty = 25C Lecce ccc ee eee ee eee eee eee EEO renee eee eben eet EES Derate linearly 0.16 W/C INDUCTIVE CURRENT, Clamped (L = 100uH), lum... - 0. cece eee cnn rere e enn e erent nee nee beeen eens 6.5A *OPERATING AND STORAGE TEMPERATURE, Tj, Tstg 0.00... cece cece eee eee e eee eee tb beeen eee eetee -55 to +150C *LEAD TEMPERATURE, TL: At distances 0.063 in. (1.6 mm) from seating plane for 105 Max. ......... 0. e eee cence ence eet ene eenae 300C In accordance with JEDEC registration data. 3-534Standard Power MOSFETs 2N6794 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Vpuve|papapege =a See Fig. 10 See Fig. 15 {MOSFET switching times are essentially independent of operating temperature.) Thermal Resistance iC _Junction-to-Case { - [ - | 625 | cw] | Junction-to-Ambient | - [ - |.17%8 [c/w | Free Air Operation | Source-Drain Diode Switching Characteristics (Typical) tr Reverse Recovery Time i - 600 ns Ty = 180C, Ip = 1.50A, digidt = 100A/us | Orn Reverse Recovered Charge 3.6 aC Ty = 180C, Ip = 1.80A, digit = 100A/ps Lton Forwerd Tum-on Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. *JEDEC registered value 2 Pulse Test: Pulae width < 300us, Duty Cycle < 2%. sa PULSE toon Vos > 'oton * Ip. GRAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) 0 100 200 250 Q 2 4 6 8 0 Vos. QRAIN-TO SOURCE VOLTAGE (VOLTS) Vos. GATE-TO-SOUACE VOLTAGE (VOLTS) Fig. 1 - Typicat output characteristics. Fig. 2 - Typical transfer characteristics.Standard Power MOSFETs 2N6794 80 us PULSE (g, DRAIN CURRENT (AMPERES) ip, DRAIN CURRENT (AMPERES) 0 4 8 12 16 20 24 Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) 2 Fig. 3 - Typical saturation characteristics. Fig. 4- 0.2 o7 0.05 ZengclO/Renye, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 0.02 SINGLE PULSE (TRANSIENT THERMAL IMPEDANCE! 0.0F 15 = 2 5 p42 5 yd 2 5 yg? 2 5 ty, SQUARE WAVE PULSE DURATION (SECONDS) OPERATION THIS AREA 1S LIMITED BY Rogigny Te = 240 Ty = 1809C MAX. Rinse 6.25 KV SINGLE PULSE w 20 50 100 200 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) 500 Maximum sate operating area. 1. DUTY FACTOR, 0 = z 2. PER UNIT BASE = Ringe = 6.25 DEG. C/W. 3. Tym - T= Pom Zthscle. 19-1 2 5 10 2 5 10 Fig. 5 - Maximum effective transient thermal impedance, junction-to-case versus pulse duration. 80 us PULSE Vos >'p)on) * Ras(on) max Tye Ty? Ty = 125C Gfs. TRANSCONDUCTANCE (SIEMENS) ign. REVERSE ORAIN CURRENT (AMPERES) a 1 2 3 4 $ 6 ? 0 Ip. DRAIN CURRENT (AMPERES) Fig. 6 - Typical transconductance versus drain current. 3-536 1 2 3 4 Vgp. SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 7 - Typical source-drain diode forward voltage.Standard Power MOSFETs 2N6794 125 Vg = 10V =10A 148 1.05 0.85 BV pss, DRAIN. TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Ags (an). DRAIN TO SOURCE ON RESISTANCE (NORMALIZED) 0.75 40 0 40 80 120 160 -40 Q 40 80 120 160 Ty, JUNCTION TEMPERATURE (9C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 - Breakdown voltage versus temperature. Fig. 9 - Typical normalized on-resistance versus temperature. 1900 Vgg=0 t= 1 MHz 800 Cigg = Cop + Cog, Cy, SHORTED a Vps = 100V Cosy = Cog tee 3 Vos = 250V < Cons = Cas + tert 3 Vpg = 4004 a 600 = Cy + Cgg 5 3 a > = 3 z 5 & a S 400 8 o - < oe 200 3 > Coss Q 10 20 30 a0 50 Q 4 8 2 6 20 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Q), TOTAL GATE CHARGE (nC) Fig. 10 - Typical capacitance versus drain-to-source Fig. 11 - Typical gate charge versus gate-to-source voltage. , voltage. Vgg = ov Vgg = 20V HW : A Rpsion) MEASURED WITH CURRENT PULSE OF a 2.0us DURATION. INITIAL Ty = 25C. {HEATING EFFECT OF 2.0 us PULSE IS MINIMAL) Ip, ORAIN CURRENT (AMPERES) Ros{on}. ORAIN-TO-SOUACE ON RESISTANCE (OHMS) 0 2 4 6 a 10 12 14 Bb 50 15 150 Ip. ORAIN CURRENT (AMPERES) Tc. CASE TEMPERATURE (C) Fig. 12 - Typical on-resistance versus drain current. Fig. 13 - Maximum drain current versus case temperature. 3-537Standard Power MOSFETs 2N6794 3-538 20 Py, POWER DISSIPATION (WATTS) Ss wm w 0 20 40 6a 80 190 1200140 Tr, CASE TEMPERATURE (C) Fig. 14 - Power versus temperature derating curve. }e PULSE WIDTH VGsion) +10V_ rf INPUT 50% AO Vescott) OV INPUT PULSE INPUT PULSE RISE TIME FALL TIME ty tg (on) Vos(ott) He TEKTRONIX ouTruT 10% 80104 PULSE Ose. Vostont GEN. . NOTES: WHEN MEASURING RISE TIME. Vgg(on) SHALL BE AS SPECIFIED ON THE INPUT WAVEFORM. WHEN MEASURING FALL TIME, Vggiot) SHALL GE SPECIFIED ON THE INPUT WAVEFORM. THE INPUT TRANSITION ANO DRAIN VOLTAGE RE- vO = SPONSE DETECTOR SHALL HAVE RISE ANO FALL RESPONSE TIMES SUCH THAT NOTES: DOUBLING THESE RESPONSES WILL NOT AFFECT THE RESULTS GREATER 4. LHOOG3 CASE GROUNDED. 2. GROUNDED CONNECTIONS COMMON TO GROUND PLANE ON BOARD. 3. PULSE WIDTH =3 ys, PERIOO~1 ms, AMPLITUDE =10V. THAN THE PRECISION OF MEASUREMENT. THE CURRENT SHALL 8 SUFFI. CIENTLY SMALL SO THAT QOUBLING IT DOES NOT AFFECT TESTS RESULTS GREATER THAN THE PRECISION OF MEASUREMENT. Fig. 15 - Switching time test circuit. BLOCKING DIODE an NOTES: 1. SET Vgg TO THE VALUE SPECIFIED UNDER DETAILS USING A 0.15 PULSE WIDTH WITH A MINIMUM OF 1 MINUTE BETWEEN PULSES, INCREASE Vgg UNTIL THE SPECIFIED VALUE OF Ip AND Vig ARE OBTAINED. CASE TEMPERATURE = 25C. + 2. SELECT Rg SUCH THAT Ip Ag = 2.5 1.0 Vie. Fig. 16 - Safe operating test circuit.High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65