SRDA3.3-4 RailClamp(R) Low Capacitance TVS Array PROTECTION PRODUCTS Description Features RailClamp(R) TVS arrays are low capacitance ESD protection devices designed to protect sensitive components from overvoltage caused by electrostatic discharge (ESD), electrical fast transients (EFT), and lightning surge. They offers desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation. * Transient protection for high-speed data lines to The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient current to ground via the internal low voltage TVS. The TVS diode clamps the transient voltage to a safe level. The low capacitance array configuration allows the user to protect up to four data lines. The SRDA3.3-4 is constructed using Semtech's proprietary EPD process technology. The EPD process provides low stand-off voltages with significant reductions in leakage current and capacitance over silicon avalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection. These devices are in a 8-pin SOIC package. It measures 3.9 x 4.9mm. The high surge capability (IPP=25A, tp=8/20s) means it can be used in high threat environments in applications such as CO/CPE equipment, telecommunication lines, and video lines. Circuit Diagram * * * * * * IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 25A (8/20s) Array of surge rated diodes with internal TVS diode Protects four I/O lines Low capacitance (<15pF) Low operating voltage: 3.3V Low clamping voltage Solid-state technology Mechanical Characteristics * * * * * JEDEC SOIC-8 Package Pb-Free, Halogen Free, RoHS/WEEE Compliant Lead Finish: Matte Sn Marking : Marking Code Packaging : Tape and Reel Applications * * * * * * T1/E1 secondary IC Side Protection T3/E3 secondary IC Side Protection Analog Video Protection Microcontroller Input Protection Base stations I2C Bus Protection Schematic and Pin Configuration 2, 3 I/O 1 I/O 2 I/O 3 I/O 1 1 8 GND NC 2 7 I/O 4 NC 3 6 I/O 3 I/O 2 4 5 GND I/O 4 5, 8 SO-8 (Top View) SRDA3.3-4 Final Datasheet 05/22/2019 Rev 3.2 www.semtech.com 1 Semtech Proprietary & Confidential Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) PPK 500 W Peak Pulse Current (tp = 8/20s) IPP 25 A Lead Soldering Temperature TL 260 (10 sec.) C Operating Temperature TOP -40 to +85 C Storage Temperature TSTG -55 to +150 C Electrical Characteristics (T=25OC unless otherwise specified) Parameter Symbol Conditions Reverse Stand-Off Voltage Min. Typ. VRWM Max. Units 3.3 V Punch-Through Voltage VPT IPT = 2A 3.5 V Snap-Back Voltage VSB ISB = 50mA 2.8 V IR VRWM = 3.3V Reverse Leakage Current Clamping Voltage VC Junction Capacitance SRDA3.3-4 Final Datasheet 05/22/2019 CJ Rev 3.2 tp = 8/20s VR = 0V, f = 1MHz 1 IPP = 1A 5.3 IPP = 10A 10 IPP = 25A 15 I/O to GND 8 I/O to I/O 4 www.semtech.com 15 A V pF 2 Semtech Proprietary & Confidential Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 120 10 TA = 25OC 100 1 % of Rated Power or IPP Peak Pulse Power - PPP (kW) Power De-rating Curve 0.1 80 60 40 20 0.01 0.1 1 10 100 DR040514-25-125-150 0 1000 0 Pulse Duration - tp (s) Clamping Voltage vs. Peak Pulse Current 25 50 75 100 Ambient Temperature - TA (OC) 125 150 Normalized Junction Capacitance vs. Reverse Voltage 20 1.2 Normalized Capacitance - CJ(VR) /CJ (VR =0V) 18 Clamping Voltage (V) 16 14 12 10 8 6 4 Waveform Parameters: tr = 8s td = 20s 2 0 0 5 SRDA3.3-4 Final Datasheet 05/22/2019 10 15 20 Peak Pulse Current - IPP (A) Rev 3.2 25 30 1.1 1 0.9 f = 1 MHz 0.8 0 www.semtech.com 0.5 1 1.5 2 Reverse Voltage - VR (V) 2.5 3 3.5 3 Semtech Proprietary & Confidential Application Information Device Connection Options for Protection of Four High-Speed Data Lines These devices are designed to protect low voltage data lines operating at 3.3V. When the voltage on the protected line exceeds the punch-through or "turn-on" voltage of the TVS diode, the steering diodes are forward biased, conducting the transient current away from the sensitive circuitry. Data lines are connected at pins 1, 4, 6 and 7. Pins 5 and 8 should be connected directly to a ground plane. The path length is kept as short as possible to minimize parasitic inductance. Note that pins 2 and 3 are connected internally to the cathode of the low voltage TVS. It is not recommended that these pins be directly connected to a DC source greater than the snap-back voltage (VSB) as the device can latch on as described below. Data Line Protection Using Internal TVS Diode as Reference use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT ) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight "snap-back" or negative resistance characteristics due to its structure. This point is defined on the curve by the snap-back voltage (VSB) and snap-back current (ISB). To return to a non-conducting state, the current through the device must fall below the ISB (approximately <50mA) and the voltage must fall below the VSB (normally 2.8V for a 3.3V device). If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state. I/O 1 EPD TVS IV Characteristic Curve I/O 2 1 8 NC 2 7 NC 3 6 4 5 IPP I/O 3 ISB These devices are constructed using Semtech's proprietary EPD technology. By utilizing the EPD technology, the SRDA3.3-4 can effectively operate at 3.3V while maintaining excellent electrical characteristics. IPT IR VSB VPT VC EPD TVS IV Characteristic Curve VRWM VBR I/O 4 IBR The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices SRDA3.3-4 Final Datasheet 05/22/2019 Rev 3.2 www.semtech.com 4 Semtech Proprietary & Confidential Typical Application PTC R1 RTIP R3 R2 RRING T1 8 T1/E1 Transceiver LC01-6 PTC 5 SRDA 3.3-4 1 TTIP 4 PTC R4 R5 T2 TRING LC01-6 PTC T1/E1 Interface Protection (GR-1089 Long Haul) SRDA3.3-4 Final Datasheet 05/22/2019 Rev 3.2 www.semtech.com 5 Semtech Proprietary & Confidential Outline Drawing - SO-8 DIM A A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc D e N 2X E/2 E1 1 E 2 ccc C 2X N/2 TIPS e/2 B D aaa C SEATING PLANE DIMENSIONS MILLIMETERS MIN NOM MAX 1.75 0.225 0.10 1.30 1.40 1.50 0.39 0.47 0.20 0.24 4.80 4.90 5.00 3.80 3.90 4.00 5.80 6.00 6.20 1.27 BSC 0.25 0.50 0.50 0.80 (1.05) 8 0 8 0.10 0.25 0.20 A2 C A A1 bbb h H bxN C A-B D c GAGE PLANE 0.25 L 01 (L1) DETAIL A SEE DETAIL A SIDE VIEW NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H- . 3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MS-012, VARIATION AA. Land Pattern - SO-8 X DIMENSIONS (C) G Z Y DIM MILLIMETERS C G P X Y Z (5.20) 3.00 1.27 0.60 2.20 7.40 P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 300A. SRDA3.3-4 Final Datasheet 05/22/2019 Rev 3.2 www.semtech.com 6 Semtech Proprietary & Confidential Marking Code SC YYWW SRDA3.3-4 XXXXX Notes: YYWW = Date Code XXXXX = Country of Assembly Tape and Reel Specification SC YYWW SRDA3.3-4 XXXXX SC YYWW SRDA3.3-4 XXXXX Pin 1 Location User Direction of Feed Ordering Information Part Number Lead Finish Qty per Reel Reel Size SRDA3.3-4.TLT Matte Sn 3000 13 Inch SRDA3.3-4 Final Datasheet 05/22/2019 Rev 3.2 www.semtech.com 7 Semtech Proprietary & Confidential Important Notice Information relating to this product and the application or design described herein is believed to be reliable, however such information is provided as a guide only and Semtech assumes no liability for any errors in this document, or for the application or design described herein. Semtech reserves the right to make changes to the product or this document at any time without notice. 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(c) Semtech 2019 Contact Information Semtech Corporation 200 Flynn Road, Camarillo, CA 93012 Phone: (805) 498-2111, Fax: (805) 498-3804 www.semtech.com SRDA3.3-4 Final Datasheet 05/22/2019 Rev 3.2 8 Semtech Proprietary & Confidential