SRDA3.3-4
Final Datasheet Rev 3.2
05/22/2019
www.semtech.com 4
Semtech
Proprietary & Condential
Application Information
Device Connection Options for Protection of Four
High-Speed Data Lines
These devices are designed to protect low voltage data
lines operating at 3.3V. When the voltage on the protected
line exceeds the punch-through or “turn-on” voltage of
the TVS diode, the steering diodes are forward biased,
conducting the transient current away from the sensitive
circuitry.
Data lines are connected at pins 1, 4, 6 and 7. Pins 5 and 8
should be connected directly to a ground plane. The path
length is kept as short as possible to minimize parasitic
inductance.
Note that pins 2 and 3 are connected internally to the
cathode of the low voltage TVS. It is not recommended
that these pins be directly connected to a DC source
greater than the snap-back voltage (VSB) as the device
can latch on as described below.
EPD TVS IV Characteristic Curve
These devices are constructed using Semtech’s proprietary
EPD technology. By utilizing the EPD technology, the
SRDA3.3-4 can eectively operate at 3.3V while maintaining
excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in traditional
silicon-avalanche TVS diodes. Since the EPD TVS devices
Data Line Protection Using Internal TVS Diode as Reference
IR
IPP
VC
VPT
VSB
VRWM
ISB
IPT
VBR
IBR
use a 4-layer structure, they exhibit a slightly dierent
IV characteristic curve when compared to conventional
devices. During normal operation, the device represents
a high-impedance to the circuit up to the device working
voltage (VRWM). During an ESD event, the device will
begin to conduct and will enter a low impedance state
when the punch through voltage (VPT) is exceeded.
Unlike a conventional device, the low voltage TVS will
exhibit a slight negative resistance characteristic as it
conducts current. This characteristic aids in lowering the
clamping voltage of the device, but must be considered
in applications where DC voltages are present.
When the TVS is conducting current, it will exhibit a slight
“snap-back” or negative resistance characteristics due to
its structure. This point is dened on the curve by the
snap-back voltage (VSB) and snap-back current (ISB). To
return to a non-conducting state, the current through the
device must fall below the ISB (approximately <50mA) and
the voltage must fall below the VSB (normally 2.8V for a
3.3V device). If a 3.3V TVS is connected to 3.3V DC source,
it will never fall below the snap-back voltage of 2.8V and
will therefore stay in a conducting state.
EPD TVS IV Characteristic Curve
1
2
3
4
8
7
6
5
I/O 1
NC
NC
I/O 2
I/O 3
I/O 4