SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature package, intended for low-voltage, high-current Lf. applications, BC868/BC869 is the matched complementary pair suitable for class-B audio output stages up to 3 W. QUICK REFERENCE DATA Collector-emitter voltage (Vge = 0) -VcEs max. 25 V Collector-emitter voltage (open base) -VcEO max. 20 V Collector current (peak value) IcM max. 2A Total power dissipation up ta Tambp = 25 OC Prot max. 1 Ww Junction temperature Tj max. 150 C D.C. current gain l = 500 mA;-VcEp=1V hFE 85 to 375 Transition frequency at f = 100 MHz I = 10mA;-VcE=5V fT > 40 MHz MECHANICAL DATA Dimensions in mm Marking code Fig. 1 SOT-89. BC869_ = CEC BC869-10 = CFC 7269230.6 BOTTOM VIEW September 1994 197BC869 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134} Collector-emitter voltage (Vag = 0} VcES max. 25 Vv Collector-emitter voltage (open base) -VcFo max. 20 V Emitter-base voltage (open collector) VEBO max. 5 V Collector current (d.c.) le max. 1A Collector current (peak value) lem max. 2A Base current (d.c.) Ip max. 100 mA Base current (peak value) -lBM max. 200 mA Total power dissipation up to Tamp = 25 OC* Prot max. 1W Storage temperature Tstg 65 to + 150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient in free air* Rth j-a = 125 KAW From junction to tab Rth j-t = 10 K/W CHARACTERISTICS Tj = 25 9C unless otherwise specified Coliector cut-off current le =0;-Vep=25V -lcpo < 10 vA le = 0; -Vcop = 25 V; Tj = 180 C !cBo < 1 mA Emitter cut-off current Ic =0;-Veg=a5V lEBO < 10 pA Base-emitter voltage lc=5mA;-Vcge = 10 V VBE typ. 0,62 V -Ic=1A:-Vce=1V VBE < 1V Collector-emitter saturation voltage lc =1A;-lg = 100 mA VcEsat < 05 Vv D.C. current gain Ic =5mA;VceE = 10 V BC869 hee > 50 Ic = 500 mA; -Vce=1V BC869 hee 85 to 375 BC869-10 hFE < 160 BC869-16 hFE 100 to 250 BC869-25 hrE > 160 lc=1A;-VcEe=1V BC869 hFe > 60 Collector capacitance at f = 450 kHz le =le= 0; -Vep=5V Ce typ. 45 pF Transition frequency at f = 100 MHz ~Ic = 10mA;Vce=5V ft > 40 MHz * Mounted on a ceramic substrate, area = 2,5 cm?; thickness = 0,7 mm. 198 September 1994Silicon planar epitaxial transistor BC869 104 Zth jra (K/W) 103 102 10-5 10-4 10-3 10-2 1071 1 10 102 103 104 tp (s) Fig. 2 Pulse power rating chart. September 1994 199