Rugged Power MOSFETs File Number 2004 Avalanche Energy Rated N-Channel Power MOSFETs 25A and 30A, 150V-200V fos(on) = 0.0852 and 0.120 Features: i Single pulse avalanche energy rated @ SOA is power-dissipation limited Nanosecond switching speeds @ Linear transfer characteristics High input impedance The IRF250R, IRF251R, IRF252R and IRF253R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect traneis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AE metal package. Absolute Maximum Ratings IRF250R, IRF251R, IRF252R, IRF253R N-CHANNEL ENHANCEMENT MODE o 9208-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE) O, Oo GATE g2cs-37801 JEDEC TO - 204AE P. tt IRF250R IRF251R IRF252R IRF253R Units Vos Drain - Source Voltage 200 150 200 150 V Voca Drain - Gate Voltage (Ras = 20 KQ) @ 200 150 200 150 v Ip @ Tc = 26C Continuous Drain Current 30 30 25 25 A lo @ Te = 100C Continuous Drain Current 19 19 16 16 A lom Pulsed Drain Current @ 120 120 100 100 A Vas Gate - Source Voitage +20 v Pp @ Tc = 25C Max. Power Dissipation 150 (See Fig. 14) Ww Linear Derating Factor 1.2 (See Fig. 14) w/C Eas Single Pulse Avalanche Energy Rating @ 910 mj the Sporting unt an ge 55 1 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-37Rugged Power MOSFETs IRF250R, IRF251R, IRF252R, IRF253R Electrical Characteristics @ T; = 25C (Unless Otherwise Specified) Turn-on speed is substantially controlled by Ls + Lo. Parameter Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF250R = IRF252R 200 ~ - Vv Vas = OV IRF251R = IRF253R 150 _ - Vv Ip = 250uA Vesum Gate Threshoid Voltage ALL 2.0 _ 40 Vos = Vos, lo = 2504 A less Gate-Source Leakage Forward ALL = _ 100 nA Ves = 20V less Gate-Source Leakage Reverse ALL = - -100 nA Ves = -20V loss Zero Gate Voltage Drain Current = = 250 HA Vos = Max. Rating, Vas = OV ALL = | 1000 | wA | Vos = Max. Rating x 0.8, Vos = OV, Tc = 125C loro On-State Drain Current @ ({RF250R iRF25iR| 39 | | A - Vos > lotem X Rosiom max. Ves = 10V IRF252R | og _ _ A IRF253R Rosin Static Drain-Source On-State IRF250R Resistance @ IRF251R| 0.07 | 0.085 a _ _ iRF252A Ves = 10V, lo = 16A IRF253R - 0.09 | 0.120 2 Qts Forward Transconductance @ ALL 8.0 14 = S(G)_} Vos > loton X Rostonmax, Io = 16A Cian Input Capacitance ALL = 2000 = pF Ves = OV, Vos = 25V, {= 1.0 MHz Coes Output Capacitance ALL = 800 = pF See Fig. 10 Crs Reverse Transfer Capacitance ALL =_ 300 = pF taton Turn-On Delay Time ALL _ - 35 ns Voo = 95V, In = 16A, Zo = 4.72 t, Rise Time ALL _ _ 100 ns See Fig. 17 tatorn Turn-Off Delay Time ALL _ _ 125 ns (MOSFET switching times are essentially th Fall Time ALL _ 100 ns independent of operating temperature.) Q, Total Gate Charge ALL _ 79 120 nc Ves = 10V, Ip = 38A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qu Gate-Source Charge ALL 37 nc essentially independent of operating Qos ____ Gate-Drain (Miller) Charge AL | | 42 [| | nc_| temperature.) Lo Internal Drain Inductance ALL - 5.0 _ nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to | internal device , source and gate pins inductances and center of die. Lo Ls Internal Source Inductance ALL _ 12.5 _ nH Measured from the source pin, 6mm G is (0.26 in.) from header and source $ bonding pad. sacs eee Thermal Resistance RinJC Junction-to-Case ALL = = 0.83. | C/W. ReCS_Case-to-Sink ALL _ 0.1 = C/W _| Mounting surface flat, smooth, and greased. RnJA Junction-to-Ambient ALL _ 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF250R; __ _ 30 A Modified MOSFET symbol (Body Diode) IRF251R showing the integral (RF252R 25 A reverse P-N junction rectifier. IRF253R ~~ ~~ Im Pulse Source Current IRF250R;} __ _ 120 A 6 (Body Diode) @ IRF251R IRF252R erct-anese inF253R{ ~ | | 10 | A Vso Diode Forward Voltage @ (RF250R/} __ _ = = = IRF251R 2.0 Vv Te = 25C, Is = 30A, Ves = OV Ibeeesn| | | 18 | WV | Te= 25C, le =25A, Vos = OV te Reverse Recovery Time ALL = 750 = ns Ty = 150C, le = 30A, dle/dt = 100A/us Qra Reverse Recovered Charge ALL _ 4.7 = uC Ty = 150C, tp = 30A, die/dt = 100A/ys _ ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. @ Ts = 25C to 150C. Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Voo = 50V, starting T = 25C, L = 1.5 MH, Ags = 50M, lpeak = 30A. See figures 15, 16. 6-38Rugged Power MOSFETs 00 us PULBE Ip. DRAIN CURRENT (AMPERES) 3.8V 0 10 20 20 40 50 Vos, DRAIN TO-SOURCE-VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics 80 yas PULSE TEST s a ip, DRAIN CURRENT (AMPERES) 0 a4 08 12 16 20 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics e = BD 2 z < rE 10 we 22> 5= 0s wt oO we te 32 28 02 aa <x sz 01 ad od 2 0.05 su en SINGLE PULSE (TRANSIENT = THERMAL !MPEDANCE} S 0.02 o z 0.01 1S 2 5 94 2 5 932 5 IRF250R, IRF251R, IRF252R, IRF253R 2 0 we PULEE: Vos > 'p(on) * Aaston) max. g 20 E oe 18 a > o Zz < Ts 6" a a Ty 2 259C | 5 Ty = -50C 0 1 2 3 4 5 6 ? a Vg. GATE'TO-SOUACE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics OPERATION tN THIS AREA IS LIMITED BY Ros(on) ip, DRAIN CURRENT (AMPERES) Te = 259C ' Ty = 150C MAX, TT Rinse = 0.83 K/W IRF251R, SINGLE PULSE + IRF250A, 2R 12 5 0 20 50 100 200 500 Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area jt} 2 1 DUTY FACTOR, D= it 2, PER UNIT BASE = Rinyc = 0.83 DEG. C/W 3. Tym Te = Pom Zins) to2 2 5 wor 2 5 to 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum. Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-39Rugged Power MOSFETs IRF250R, IRF251R, IRF252R, IRF253R Ty = 260C Ty = 150C Ty = 1259C Ty= 150C Vos > '!p(on) * Rosion) max. 1 ' : 80 us PULSE TEST Ty = 259C gig. TRANSCONDUCTANCE {SIEMENS} Ip. REVERSE DRAIN CURRENT (AMPERES) 0 1 2 3 4 a 10 20 30 40 50 Vgp- SOURCE-TO DRAIN VOLTAGE (VOLTS) tp, DRAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 24 1.25 Ves = 10V ' ' Ig = 16A ~ N 115 2 a we (NORMALIZED) o . nn (NORMALIZED) 0.86 BVpss. DRAIN. TO-SQURCE BREAKDOWN VOLTAGE Ros(on). ORAIN TO SOURCE ON RESISTANCE o 0.75 -40 0 40 60 120 160 Ty, JUNCTION TEMPERATURE (0C) 02 40 Q 49 80 120 160 Fig, 8 Breakdown Voltage Vs. Temperature Ty, JUNCTION TEMPERATURE (UC} 4000 Fig. 9 Normalized On-Resistance Vs. Temperature Veg +0 20 3200 fe 1MHz Cing * Cog + Cog, Cos SHORTEO a Cras = Cog S, Vos * 40V ~ Cos Spy 2 13 i" | & Com = Cay * to te Vos * }00V.] h = 2400 2 roto 2 = Cas = Von = 160V, IRF2S0R, 2628 J < $ = w < Ciss 2 10 S 800 3 eo o 2 Nd 2 / 800 4 > / Ips 38a FOR TEST CIRCUIT +4 SEE FIGURE 18 0 10 20 30 40 50 Vpg. DRAIN-TO- SOURCE VOLTAGE {VOLTS) a % 38 a mM 4g . . Oy, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 6-40 Fig. 11 Typical Gate Charge Vs. Gate-to-Source VoltageRugged Power MOSFETs 0.22 T T T Rosion) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us 0.18 Vos = 'OV E+ PULSE IS MINIMAL} 0.18 0.10 A a Roston). ORAIN-TO-SOURCE ON RESISTANCE (OHMS) Soot YW | Lm Vgs = 20V i 0.06 G 40 80 120 160 Ip, DRAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current \ 140 N 120 \ \ io N 80 N 60 Po, POWER DISSIPATION (WATTS) . \ N 0 20 40 60 80 100 120 140 Tr CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve ADJUST Ry TO OBTAIN SPECIFIED Ip V6s GENERATOR 102 SOURCE St | IMPEDANCE Fig. 17 Switching Time Test Circuit IRF250R, IRF251R, IRF252R, IRF253R 30 24 IRF250R, 251R, 18 IRF252R, 253R ip, DRAIN CURRENT {AMPERES} 0 25 50 75 100 125 150 Tp, CASE TEMPERATURE (C} Fig. 13 ~- Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN REQUIRED PEAK |, Vgg=!0V tp 9208-42659 Fig. 15 Unclamped Energy Test Circult 92CS- 42660 Flg. 16 Unclamped Energy Waveforms CURRENT -) +Vpg REGULATOR (ISOLATED SUPPLY) + SAME TYPE 12v0> AS DUT BATTERY _L DUT | Ls mA o----- FT VWA-O Vpns Ig iL Ip CURRENT CURRENT SHUNT SHUNT 92GS-44103 Fig. 18 Gate Charge Test Circuit 6-41