NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
MBR1670CT thru 16100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67 9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
13
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 70
to
100
Volts
FORWARD CURRENT
- 16
Amperes
16
125
10000
MBR1670CT
70
49
70
MBR16100CT
100
70
100
MBR1690CT
90
63
90
MBR1680CT
80
56
80
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
T
J
Operating Temperature Range
C
T
STG
Storage Temperature Range
C
Typical Thermal Resistance (Note 3)
R
0JC
C/W
C
J
Typical Junction Capacitance,
per element (Note 2)
pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
@T
J
=125 C
mA
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage, (Note 1) V
Voltage Rate of Change (Rated VR)
@I
F
=8A
@I
F
=8A
@I
F
=16A
@I
F
=16A
dv/dt
Maximum Average Forward RectifiedCurrent
at T
C
=100 C (See Fig.1)
T
J
=25 C
T
J
=125 C
T
J
=25 C
T
J
=125 C
-55 to +150
-55 to +175
2.0
0.1
100
0.85
0.75
0.95
0.85
275
V/us
SEMICONDUCTOR
LITE-ON
REV. 2, Oct-2010, KTHC14